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Thermoelectric Power Generation Characteristics of a Thin Film Device Processed by the Flip Chip Bonding of Bi2Te3 and Sb2Te3 Thin Film Legs Using an Anisotropic Conductive Adhesive

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Figure

Fig. 2Schematic illustration of the fabrication process for the top substrateof the thin-film device: (a) sputtering of the Ti/Cu metallization, (b) PRpatterning and electrodeposition of the Cu/Au electrodes, (c) electro-deposition of the Cu/Au bumps, and (d) electrode patterning.
Fig. 3Schematic illustration of the thin-film device processed by flip-chipbonding of the Cu/Au bumps to the thin-film legs using the ACA.
Table 1Composition and thermoelectric properties of the electrodepositedBi2Te3 and Sb2Te3 films.
Fig. 8Schematic illustration for the equivalent thermal circuit of the thin-film device.
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