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Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces

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Academic year: 2020

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FIG. 2. Process-dependent localized states at ultrathin �5 nm� SiO2 /Si inter-face. The combination of 900 °C RTA plus 400 °C under hydrogen ambientappears to reduce the trap emissions almost completely �see Ref
Figure 1 shows that a number of different deep levelsreside in the dielectric overlayer, at the dielectric interface

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