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Low-temperature preparation of GaN-SiO2 interfaces with low defect density. II. Remote plasma-assisted oxidation of GaN and nitrogen incorporation

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Figure

FIG. 2. Differential AES spectra from (i) clean GaN, (ii) thick RPAO oxide,and (iii) thin RPAO oxide on GaN substrate
FIG.4.TimeevolutionofdifferentialAESspectrafrom(i)N2/He-plasma-cleaned GaN sample and (ii)–(vi) O2/He-plasma-oxidationprocessing of GaN surface for 0.5 to 30 min.
Figure 5 shows log-log plots of the oxide thickness versus� from the substrate becomes too weak to mea-sure
Figure 10 shows log-log plots of the oxide thickness usingfor the extended oxidationN,film in determiningO/IN, and it also indicates that a smallamount of nitrogen was incorporated into the RPAO oxideoxide thickness using IOthe NNtime
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