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Ultra High Vacuum Physical Vapor Deposition of Yttrium Aluminate and Hafnium Aluminate High-k Dielectrics on Silicon

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Figure

Figure 1.1: A cross-section view of a typical MOS device.
Figure 1.2: Projected device dimensions for future technology generations.
Figure 1.3: Projected device dimensions for future technology generations
Figure 1.4: Experimental tunneling currents for thin SiO2 dielectric.
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