Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

FEATURES

• LITTLE FOOT

^® Plus Schottky

• Si4830DY Pin Compatible • PWM Optimized

• 100 % R

_g

Tested

APPLICATIONS

• Asymmetrical Buck-Boost DC/DC Converter PRODUCT SUMMARY

V_DS (V) r_DS(on) (Ω) I_D (A) Channel-1

30

0.020 at V_GS= 10 V 7.5 0.0275 at V_GS= 4.5 V 6.5 Channel-2 0.019 at V_GS= 10 V 7.5 0.023 at V_GS= 4.5 V 6.5

SCHOTTKY PRODUCT SUMMARY

V_DS (V)

V_SD (V)

Diode Forward Voltage I_F (A)

30 0.50 V at 1.0 A 2.0

S₁ D₁

G₁ D₁

S₂ D₂

G2 D2

SO-8

5 6 7 8

Top View 2

3 4 1

Ordering Information:

Si4376DY-T1-E3 (Lead (Pb)-free)

Si4376DY-T1 N-Channel MOSFET

D₁

G₁

S1

N-Channel MOSFET D₂

G₂

S₂

Schottky Diode

Notes:

a. Surface Mounted on 1" x 1" FR4 Board.

* Pb containing terminations are not RoHS compliant, exemptions may apply.

ABSOLUTE MAXIMUM RATINGS T

_A

= 25 °C, unless otherwise noted

Parameter Symbol 10 sec Steady State

Unit Channel-1 Channel-2 Channel-1 Channel-2

Drain-Source Voltage V_DS 30

Gate-Source Voltage V_GS ± 20 ± 12 ± 20 ± 12 V

Continuous Drain Current (T_J = 150 °C)^a T_A = 25 °C

I_D 7.5 5.7

A

T_A = 70 °C 6.0 4.6

Pulsed Drain Current I_DM 30

Continuous Source Current (Diode Conduction)^a I_S 1.7 0.9

Maximum Power Dissipation^a T_A = 25 °C

P_D 2.0 1.1

T_A = 70 °C 1.3 0.7 W

Operating Junction and Storage Temperature Range T_J, T_stg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol

MOSFET Schottky

Unit Typical Maximum Typical Maximum

Maximum Junction-to-Ambient^a t ≤ 10 sec

R_thJA 52 62.5 53 62.5

°C/W

Steady State 93 110 93 110

Maximum Junction-to-Foot (Drain) Steady State R_thJF 35 40 35 40

Available Pb-free

RoHS*

COMPLIANT

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Notes:

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Parameter Symbol Test Conditions Min Typ Max Unit

Static

Gate Threshold Voltage V_GS(th) V_DS= V_GS, I_D = 250 µA Ch-1 1.0 3.0

Ch-2 0.8 2.0 V

Gate-Body Leakage I_GSS V_DS = 0 V, V_GS = ± 20 V Ch-1 ± 100

V_DS = 0 V, V_GS = ± 12 V Ch-2 ± 100 nA

Zero Gate Voltage Drain Current I_DSS

V_DS= 30 V, V_GS= 0 V Ch-1 1

Ch-2 100 µA

V_DS= 30 V, V_GS= 0 V, T_J= 85 °C Ch-1 15

Ch-2 2000

On-State Drain Current^b I_D(on) V_DS= 5 V, V_GS= 10 V Ch-1 20 Ch-2 20 A

Drain-Source On-State Resistance^b r_DS(on)

V_GS= 10 V, I_D= 7.5 A Ch-1 0.016 0.020

Ch-2 0.015 0.019 Ω

V_GS= 4.5 V, I_D= 6.5 A Ch-1 0.022 0.0275

Ch-2 0.018 0.023

Forward Transconductance^b g_fs V_DS = 15 V, I_D= 7.5 A Ch-1 30

Ch-2 30 S

Diode Forward Voltage^b V_SD I_S= 1 A, V_GS= 0 V Ch-1 0.75 1.2

Ch-2 0.47 0.5 V

Dynamic^a

Total Gate Charge Q_g

V_DS = 15 V, V_GS= 4.5 V, I_D= 7.5 A

Ch-1 9 14

nC

Ch-2 12.5 20

Gate-Source Charge Q_gs Ch-1 3.8

Ch-2 4.0

Gate-Drain Charge Q_gd Ch-1 3.1

Ch-2 3.2

Gate Resistance R_g Ch-1 0.5 1.3 2.0

Ch-2 0.5 1.3 1.8 Ω

Turn-On Delay Time t_d(on)

V_DD = 15 V, R_L = 15 Ω I_D ≅ 1 A, V_GEN = 10 V, R_G = 6 Ω

Ch-1 12 18

ns

Ch-2 12 20

Rise Time t_r Ch-1 11 17

Ch-2 11 17

Turn-Off Delay Time t_d(off) Ch-1 27 40

Ch-2 40 66

Fall Time t_f Ch-1 9 14

Ch-2 10 15

Source-Drain Reverse Recovery

Time t_rr I_F = 1.7 A, di/dt = 100 A/µs Ch-1 35 55

Ch-2 28 45

SCHOTTKY SPECIFICATIONS T

_J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min Typ Max Unit

Forward Voltage Drop V_F I_F = 1.0 A 0.47 0.50

I_F = 1.0 A, T_J = 125 °C 0.36 0.42 V

Maximum Reverse Leakage Current I_rm

V_r = 30 V 0.004 0.100

V_r = 30 V, T_J = 100 °C 0.7 10 mA

V_r = - 30 V, T_J = 125 °C 3.0 20

Junction Capacitance C_T V_r = 10 V 50 pF

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MOSFET CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge 0

5 10 15 20 25 30

0 2 4 6 8 10

V_GS = 10 thru 5 V

V_DS - Drain-to-Source Voltage (V) - Drain Current (A)ID

3 V 4 V

- On-Resistance (rDS(on)Ω)

0.000 0.010 0.020 0.030 0.040

0 5 10 15 20 25 30

ID - Drain Current (A) V_GS = 10 V V_GS = 4.5 V

0 2 4 6 8 10

0 4 8 12 16 20

VDS = 15 V I_D = 7.5 A

- Gate-to-Source Voltage (V)

Qg - Total Gate Charge (nC) VGS

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature 0

5 10 15 20 25 30

0 1 2 3 4 5

T_C = 125 °C

- 55 °C 25 °C

V_GS - Gate-to-Source Voltage (V) - Drain Current (A)ID

0 300 600 900 1200 1500

0 5 10 15 20 25 30

V_DS - Drain-to-Source Voltage (V) C_rss

C - Capacitance (pF)

C_oss C_iss

0.6 0.8 1.0 1.2 1.4 1.6

- 50 - 25 0 25 50 75 100 125 150

V_GS = 10 V I_D = 7.5 A

TJ - Junction Temperature (°C) (Normalized)- On-Resistance rDS(on)

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Source-Drain Diode Forward Voltage

Threshold Voltage

0.0 0.2 0.4 0.6 0.8 1.0 1.2

T_J = 150 °C

TJ = 25 °C 40

10

1

VSD - Source-to-Drain Voltage (V) - Source Current (A)IS

- 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4

- 50 - 25 0 25 50 75 100 125 150

ID = 250 µA

Variance (V)VGS(th)

T_J - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power 0.00

0.01 0.02 0.03 0.04 0.05 0.06

0 2 4 6 8 10

I_D = 7.5 A

V_GS - Gate-to-Source Voltage (V)

0 30 50

10 20

Power (W)

Time (sec) 40

1 10 100 600

10^-1 10^-2 10^-3

Safe Operating Area, Junction-to-Foot V DS - Drain-to-Source V oltage (V) 100

1

0.1 1 1 0 100

0.01 10

100 ms - Drain Current (A) I D

0.1 (

T _C = 25 °C Single Pulse

1 s 10 s dc 10 ms Limited by r_{DS (on)}

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MOSFET CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Normalized Thermal Transient Impedance, Junction-to-Ambient

10^-3 10^-2 10^-1 1 10 600

10^-4 100

2

1

0.1

0.01 0.2

0.1

0.05

0.02

Single Pulse Duty Cycle = 0.5

Square Wave Pulse Duration (sec) Normalized Effective Transient Thermal Impedance

1. Duty Cycle, D =

2. Per Unit Base = R_thJA = 93 °C/W 3. TJM - TA = PDMZthJA(t)

t₁ t₂ t₁

t₂ Notes:

4. Surface Mounted P_DM

Normalized Thermal Transient Impedance, Junction-to-Foot

10^-3 10^-2 10^-1 1 1 0

10^-4 2

1

0.1

0.01 0.2

0.1 0.05

0.02

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Output Characteristics

On-Resistance vs. Drain Current

Gate Charge 0

5 10 15 20 25 30

0 2 4 6 8 10

V_GS = 10 thru 4 V

V_DS - Drain-to-Source Voltage (V) - Drain Current (A)ID

3 V

0.000 0.006 0.012 0.018 0.024 0.030

0 5 10 15 20 25 30

ID - Drain Current (A) V_GS = 10 V V_GS = 4.5 V

0 2 4 6 8 10

0 6 12 18 24 30

VDS = 15 V I_D = 7.5 A

- Gate-to-Source Voltage (V)

Q - Total Gate Charge (nC) VGS

g

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature 0

5 10 15 20 25 30

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

TC = 125 °C

- 55 °C 25 °C

V_GS - Gate-to-Source Voltage (V) - Drain Current (A)ID

0 400 800 1200 1600 2000

0 5 10 15 20 25 30

VDS - Drain-to-Source Voltage (V) C_rss

Coss Ciss

0.6 0.8 1.0 1.2 1.4 1.6 1.8

- 50 - 25 0 25 50 75 100 125 150

V_GS = 10 V ID = 7.5 A

TJ - Junction Temperature (°C) (Normalized)- On-Resistance rDS(on)

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MOSFET CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ = 150 °C

T_J = 25 °C 30

10

1

V_SD - Source-to-Drain Voltage (V) - Source Current (A)IS

- 0.8 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4

- 50 - 25 0 25 50 75 100 125 150

ID = 250 µA

Variance (V)VGS(th)

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power 0.00

0.01 0.02 0.03 0.04 0.05 0.06

0 2 4 6 8 10

ID = 7.5 A

VGS - Gate-to-Source Voltage (V)

0 30 50

10 20

Power (W)

Time (sec) 40

1 10 100 600

10^-1 10^-2 10^-3

Safe Operating Area, Junction-to-Foot

0.1 1 1 0 100

- Drain Current (A) I D

T _C = 25 °C Single Pulse

V _DS - Drain-to-Source V oltage (V) 100

1

0.01 10

100 ms

0.1 1 s

10 s dc 10 ms Limited by r_DS(on)

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Normalized Thermal Transient Impedance, Junction-to-Ambient

10^-3 10^-2 10^-1 1 10 600

10^-4 100

2

1

0.1

0.01 0.2

0.1

0.05

0.02

1. Duty Cycle, D =

2. Per Unit Base = R_thJA = 93 °C/W 3. T_JM - T_A = P_DMZ_thJA^(t)

t₁ t₂ t₁

t₂ Notes:

4. Surface Mounted P_DM

Normalized Thermal Transient Impedance, Junction-to-Foot

10^-3 10^-2 10^-1 1 10

10^-4 2

1

0.1

0.01 0.2

0.1 0.05

0.02

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SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech- nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71934.

Reverse Current vs. Junction Temperature

0 25 50 75 100 125 150

20 10

0.0001 - Reverse Current (mA)IR

TJ - Temperature (°C) 30 V

24 V

0.001 0.01 0.1 1

Forward Voltage Drop

0.0 0.3 0.6 0.9 1.2 1.5

10

1 - Forward Current (A)IF

V_F - Forward Voltage Drop (V) T_J = 150 °C

T_J = 25 °C

Capacitance

V_DS - Drain-to-Source Voltage (V)

0 40 80 120 160 200

0 6 12 18 24 30

C_oss

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All product specifications and data are subject to change without notice.

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Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode