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Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1 3 μm Quantum Dot Lasers

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Figure

Table 1 Comparison of several types of growth parameters and annealing temperatures
Fig. 1 Comparison of photoluminescence (PL) spectra of epitaxialwafers under different annealing temperature
Fig. 4 Device structure. a 1.3-μm quantum dot F-P broad area laser's epitaxial structure
Fig. 5 SEM image of the laser's cross section. The F-P broad area laser witha standard laser fabrication process

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