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Dust Plasma Effect on the Etching Process of Si[100] by Ultra Low Frequency RF Plasma

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Figure

Figure 1. A Schematic diagram of the plasma etching cell.
Figure 2. The RF electrical discharge circuit.
Figure 5. The temporally variation of ion current distribution at 1 mbar for the mixture of (O2applied voltage (350, 500, 700, 800, 900 volts)./Ar) discharge at different
Figure 6. The ion velocity distribution function F(v) at 1 mbar and different applied voltage of Argon
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