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Preparation of Directionally Solidified B4C TiB2 SiC Ternary Eutectic Composites by a Floating Zone Method and Their Properties

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Figure

Fig. 1XRD patterns of B4C–TiB2–SiC composites for the cross sectionperpendicular to the growth direction at the composition of (a) 43.1B4C–6.9TiB2–50.0SiC, (b) 58.3B4C–7.0TiB2–34.7SiC and (c) 46.0B4C–17.5TiB2–36.5SiC (mol%).
Fig. 5XRD pattern of B4C–TiB2–SiC eutectic composites for the crosssection perpendicular to the growth direction.
Fig. 6Pole figure of (a) B4C(104), (b) TiB2(100) (c) SiC(111) in the B4C–TiB2–SiC eutectic composite for the cross section perpendicular to thegrowth direction.
Fig. 9Temperature dependence of the electrical conductivity for the B4C–TiB2–SiC composites.

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