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Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics

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Figure

Fig. 7 that the calculated characteristic matches the measured characteristic only with
Fig. 1. The effective mobility as a function of the vertical effective field for the Si
Fig. 2(b). An enlarged version of Fig. 2(a) showing the intercepts of the straight lines
Fig. 3. The extraction of the threshold voltage from the x axis intercepts. The VTH
+7

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