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P type β gallium oxide : a new perspective for power and optoelectronic devices

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Figure

Fig. 1a shows a photograph of a 2 inch diameter β-Ga2O3 wafer that has undergone Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM)
Fig. 2. (a) Resistivity versus temperature for β-Ga2O3 films on c-sapphire. (b) Voltage versus Intensity I-V characteristics
Fig. 3 Hall voltage VH versus applied perpendicular magnetic field at different temperatures
Fig. 4 (a) temperature dependence of the hole concentration p. (b) ln(p) versus 1000/T plot leading to a carrier activation energy
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