Maximum Ratings Parameter Symbol Value Unit Continuous drain current T C = 25 C T C = 100 C

Cool MOS™

Power Transistor

DS 600 V

R_DS(on) 0.95 _Ω

I_D 4.5 A

Feature

• New revolutionary high voltage technology • Ultra low gate charge

• Periodic avalanche rated • Extreme dv/dtrated

• Ultra low effective capacitances • Improved transconductance PG-TO251 PG-TO252 1 3 2 1 3 2

Type Package Ordering Code SPU04N60S5 PG-TO251 Q67040-S4228 SPD04N60S5 PG-TO252 Q67040-S4202 Marking 04N60S5 04N60S5 Maximum Ratings

Parameter Symbol Value Unit Continuous drain current

T_C = 25 °C T_C = 100 °C I_D 4.5 2.8 A

Pulsed drain current, t_p limited by T_jmax I_{D puls} 9

Avalanche energy, single pulse I_D = 3.4 A, V_DD = 50 V

E_AS 130 mJ

Avalanche energy, repetitive t_AR limited by T_jmax1)

I_D = 4.5 A, V_DD = 50 V

E_AR 0.4

Avalanche current, repetitive t_AR limited by T_jmax I_AR 4.5 A

Gate source voltage V_GS ±20 V

Gate source voltage AC (f >1Hz) V_GS ±30

Power dissipation, TC = 25°C Ptot 50 W

Maximum Ratings

Parameter Symbol Value Unit Drain Source voltage slope

V_DS = 480 V, I_D = 4.5 A, T_j = 125 °C

dv/dt 20 V/ns

Thermal Characteristics

Parameter Symbol Values Unit min. typ. max.

Thermal resistance, junction - case R_thJC - - 2.5 K/W

Thermal resistance, junction - ambient, leaded R_thJA - - 62

SMD version, device on PCB: @ min. footprint @ 6 cm2 _{cooling area} 2) R_thJA -35 62 -Soldering temperature, *)

1.6 mm (0.063 in.) from case for 10s

T_sold - - 260 °C

Electrical Characteristics, atTj=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit min. typ. max.

Drain-source breakdown voltage V_(BR)DSS V_GS=0V,I_D=0.25mA 600 - - V

Drain-Source avalanche breakdown voltage

V_(BR)DS V_GS=0V,I_D=4.5A - 700

-Gate threshold voltage V_GS(th) I_D=200µΑ,V_GS=V_DS 3.5 4.5 5.5 Zero gate voltage drain current I_DSS V_DS=600V,V_GS=0V,

T_j=25°C, T_j=150°C -0.5 -1 50 µA

Gate-source leakage current I_GSS V_GS=20V,V_DS=0V - - 100 nA

Drain-source on-state resistance R_DS(on) V_GS=10V, I_D=2.8A,

T_j=25°C T_j=150°C -0.85 2.3 0.95 -Ω

Gate input resistance RG f=1MHz, open Drain - 20

Electrical Characteristics , at T_j = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit min. typ. max.

Characteristics

Transconductance g_fs V_DS≥2*I_D*R_DS(on)max,

I_D=2.8A

- 2.5 - S

Input capacitance C_iss V_GS=0V,V_DS=25V,

f=1MHz

- 580 - pF

Output capacitance C_oss - 220

-Reverse transfer capacitance C_rss - 7

-Effective output capacitance,3)

energy related

C_o(er) V_GS=0V,

V_DS=0V to 480V

- 20 - pF

Effective output capacitance,4)

time related

C_o(tr) - 35

-Turn-on delay time t_d(on) V_DD=350V,V_GS=0/10V,

I_D=4.5A,R_G=18Ω

- 55 - ns

Rise time tr VDD=350V,VGS=0/10V,

I_D=4.5A,R_G=18

- 30

-Turn-off delay time t_d(off) V_DD=350V,V_GS=0/10V,

I_D=4.5A,R_G=18Ω

- 60 90

Fall time t_f - 15 22.5

Gate Charge Characteristics

Gate to source charge Q_gs V_DD=350V,I_D=4.5A - 4.5 - nC

Gate to drain charge Q_gd - 11

-Gate charge total Q_g V_DD=350V,I_D=4.5A, V_GS=0 to 10V

- 17.6 22.9

Gate plateau voltage V_(plateau) V_DD=350V,I_D=4.5A - 8 - V

1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.

2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

3_{Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.} 4_{Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.}

Electrical Characteristics, at T_j = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit min. typ. max.

Inverse diode continuous forward current

I_S T_C=25°C - - 4.5 A

Inverse diode direct current, pulsed

I_SM - - 9

Inverse diode forward voltage V_SD V_GS=0V,I_F=I_S - 1 1.2 V

Reverse recovery time t_rr V_R=350V,I_F=I_S ,

di_F/dt=100A/µs

- 900 1530 ns

Reverse recovery charge Q_rr - 3.2 - µC

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit typ. typ. Thermal resistance R_th1 0.039 K/W R_th2 0.074 R_th3 0.132 R_th4 0.555 R_th5 0.529 R_th6 0.169 Thermal capacitance C_th1 0.00007347 Ws/K C_th2 0.0002831 C_th3 0.0004062 C_th4 0.001215 C_th5 0.00276 C_th6 0.029 External H eatsink Tj Tcase Tam b Cth1 Cth2 Rth1 Rth,n Cth,n Ptot(t)

1 Power dissipation P_tot = f(T_C) 0 20 40 60 80 100 120 °C 160 T_C 0 5 10 15 20 25 30 35 40 45 W 55 SPU04N60S5 Ptot

2 Safe operating area I_D= f ( V_DS ) parameter : D = 0 , T_C=25°C 100 101 102 _V 103 V_DS -2 10 -1 10 0 10 1 10 A ID tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC

3 Transient thermal impedance Z_thJC = f(t_p) parameter:D=t_p/T 10-5 10-4 10-3 10-2 s 10-1 t_p -2 10 -1 10 0 10 1 10 K/W ZthJC

4 Typ. output characteristic I_D = f (V_DS); T_j=25°C parameter: t_p= 10 µs, V_GS 0 5 10 15 _V 25 V_DS 0 2 4 6 8 10 A 14 ID 6.5V 7V 7.5V 8V 8.5V 9V 9.5V 20V 12V 10V

5 Typ. output characteristic I_D = f (V_DS); T_j=150°C parameter:t_p= 10 µs, V_GS 0 5 10 15 _V 25 V_DS 0 2 4 A 8 ID 6V 6.5V 7V 7.5V 8V 8.5V9V 20V 12V 10V 9.5V

6 Typ. drain-source on resistance R_DS(on)=f(I_D) parameter: T_j=150°C,V_GS 0 1 2 3 4 5 6 7 _A 8.5 I_D 1 1.5 2 2.5 3 3.5 4 mΩ 5 RDS(on) 20V 12V 10V 9V 8.5V 8V 7.5V 7V 6.5V 6V

7 Drain-source on-state resistance R_DS(on) = f(T_j) parameter : I_D = 2.8 A, V_GS = 10 V -60 -20 20 60 100 °C 180 T_j 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Ω 5.5 SPU04N60S5 RDS(on) typ 98%

8 Typ. transfer characteristics

I_D= f ( V_GS ); V_DS≥ 2 x I_D x R_DS(on)max parameter: t_p = 10 µs 0 2 4 6 8 10 12 14 16 _V 20 V_GS 0 2 4 6 8 10 12 A 16 ID

9 Typ. gate charge V_GS=f (Q_Gate) parameter:I_D = 4.5 A pulsed 0 4 8 12 16 20 nC 26 Q_Gate 0 2 4 6 8 10 12 V 16 SPU04N60S5 VGS 0.2VDS max 0.8VDS max

10 Forward characteristics of body diode I_F = f (V_SD) parameter: T_{j , t}p= 10 µs 0 0.4 0.8 1.2 1.6 2 2.4 V 3 V_SD -2 10 -1 10 0 10 1 10 A SPU04N60S5 IF T_j = 25 °C typ T_j = 25 °C (98%) T_j = 150 °C typ T_j = 150 °C (98%) 11 Avalanche SOA I_AR = f (t_AR) par.:T_j≤ 150 °C 10-3 10-2 10-1 100 101 102 _µs 104 t_AR 0 0.5 1 1.5 2 2.5 3 3.5 4 A 5 IAR T_j(START)=25°C T_j(START)=125°C 12 Avalanche energy E_AS = f(T_j) par.:I_D = 3.4 A, V_DD = 50 V 20 40 60 80 100 120 °C 160 T_j 0 20 40 60 80 100 120 mJ 160 EAS

13 Drain-source breakdown voltage V_(BR)DSS = f (T_j) -60 -20 20 60 100 °C 180 T_j 540 560 580 600 620 640 660 680 V 720 SPU04N60S5 V(BR)DSS

14 Avalanche power losses P_AR = f (f ) parameter: E_AR=0.4mJ 104 105 _Hz 106 f 0 25 50 75 100 125 150 W 200 PAR 15 Typ. capacitances C = f(V_DS) parameter:V_GS=0V,f=1 MHz 0 100 200 300 400 _V 600 V_DS 0 10 1 10 2 10 3 10 4 10 pF C Ciss Coss Crss

16 Typ. C_oss stored energy

E_oss=f(V_DS) 0 100 200 300 400 _V 600 V_DS 0 0.5 1 1.5 2 2.5 µJ 3.5 Eoss