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Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell

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Figure

FIG. 1. Structure parameters used in the multiband k�p and drift-diffusion simulation for GaAs quantum well, GaAsNanodsik, and GaAs Nanodisk array.
FIG. 2. Band edge profile for GaAs QD: (a) CB edge profile in yzNprofile in plane, (b) HH band edge profile in yz plane, (c) CB edge xy plane, (d) HH band edge profile in xy plane
FIG. 3. Optical absorption and spontaneous emission spectrum for GaAs QW. (a) Band dispersion of GaAs QW (4 nmthickness) along Kz direction
FIG. 4. Comparison of the simulated spontaneous emission spectrum with experimental PL results: (a) 4 nm/8 nm GaAsQWs, (b) GaAs QDs with height of 4 nm and 8 nm
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