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Superacid derived surface passivation for measurement of ultra long lifetimes in silicon photovoltaic materials

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Figure

Table 1Solvents for TFSI investigated in this study. All solvents are in anhydrous forms
Fig. 1. Initial efldilimit of Richter et al.ffective lifetime versus excess carrier density for 5 Ω cm n-typeoat-zone silicon with a thickness of 740 µm passivated with TFSI dissolved infferent solvents whose properties are given in Table 1
Fig. 4 shows a time series of photographs of small sealed vials of various
Fig. 5. A comparison of the time stability of TFSI-hexane and TFSI-DCE solu-
+3

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