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Photoelectrical Characteristics of UV Organic Thin-film Transistor Detectors

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Figure

Fig. 1. a, Fabrication process of photoOTFT. S/D stands for source/drain electrodes. Arrow is to indicate process
Fig. 2. Transfer (a) and output (b) characteristics of photoOFET under dark and UV light of 2.45 mW/cm2
Fig. 3. Photosensitivity versus gate voltage at various UV light intensities (a) and maximum photosensivity versus intensity (b) of fabricated photoOTFT at VD of 5 V
Fig. 4. (a) Relationship between photoresponsivity and gate voltage at different UV light intensities and (b) maximum photoresponsivity as function of intensity of fabricated pentacene photoOTFT at VD of 5 V
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