Description. TO-220F FDPF Series. Symbol Parameter FDP26N40 FDPF26N40 Units V DSS Drain to Source Voltage 400 V V GSS Gate to Source Voltage ±30 V

tm

February 2008

0 N-Channel MOSFET

UniFET

FDP26N40 / FDPF26N40

N-Channel MOSFET

400V, 26A, 0.16Ω Features

• R_DS(on) = 0.13Ω ( Typ.)@ V_GS = 10V, I_D = 13A

• Low gate charge ( Typ. 48nC)

• Low C_rss ( Typ. 30pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

• RoHS compliant

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor correction.

D

G

S TO-220F

FDPF Series G D S

TO-220 FDP Series G DS

MOSFET Maximum Ratings

Thermal Characteristics

Symbol Parameter FDP26N40 FDPF26N40 Units

V_DSS Drain to Source Voltage 400 V

V_GSS Gate to Source Voltage ±30 V

I_D Drain Current -Continuous (T_C = 25^oC) 26 26*

-Continuous (T_C = 100^oC) 15.6 15.6* A

I_DM Drain Current - Pulsed (Note 1) 104 104* A E_AS Single Pulsed Avalanche Energy (Note 2) 1352 mJ I_AR Avalanche Current (Note 1) 26 A E_AR Repetitive Avalanche Energy (Note 1) 26.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

P_D Power Dissipation (T_C = 25^oC) 265 40 W

- Derate above 25^oC 2.0 0.3 W/^oC

T_J, T_STG Operating and Storage Temperature Range -55 to +150 ^oC

T_L Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds 300 ^oC

Symbol Parameter FDP26N40 FDPF26N40 Units

R_θJC Thermal Resistance, Junction to Case 0.5 3.0

oC/W

R_θCS Thermal Resistance, Case to Sink Typ. 0.5 -

R Thermal Resistance, Junction to Ambient 62.5 62.5

*Drain current limited by maximum junction temperature

0 N-Channel MOSFET Package Marking and Ordering Information

Electrical Characteristics

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking Device Package Reel Size Tape Width Quantity

FDP26N40 FDP26N40 TO-220 - - 50

FDPF26N40 FDPF26N40 TO-220F - - 50

Symbol Parameter Test Conditions Min. Typ. Max. Units

BV_DSS Drain to Source Breakdown Voltage I_D = 250µA, V_GS = 0V, T_J = 25^oC 400 - - V

∆BV_DSS ∆T_J

Breakdown Voltage Temperature

Coefficient I_D = 250µA, Referenced to 25^oC - 0.5 - V/^oC

I_DSS Zero Gate Voltage Drain Current V_DS = 400V, V_GS = 0V - - 1

V_DS = 320V, T_C = 125^oC - - 10 µA

I_GSS Gate to Body Leakage Current V_GS = ±30V, V_DS = 0V - - ±100 nA

V_GS(th) Gate Threshold Voltage V_GS = V_DS, I_D = 250µA 3.0 - 5.0 V

R_DS(on) Static Drain to Source On Resistance V_GS = 10V, I_D = 13A - 0.13 0.16 Ω

g_FS Forward Transconductance V_DS = 20V, I_D = 13A (Note 4) - 25.5 - S

C_iss Input Capacitance

V_DS = 25V, V_GS = 0V f = 1MHz

- 2400 3185 pF

C_oss Output Capacitance - 390 520 pF

C_rss Reverse Transfer Capacitance - 30 45 pF

Q_g(tot) Total Gate Charge at 10V

V_DS = 320V, I_D = 26A V_GS = 10V

(Note 4, 5)

- 48 60 nC

Q_gs Gate to Source Gate Charge - 15 - nC

Q_gd Gate to Drain “Miller” Charge - 20 - nC

t_d(on) Turn-On Delay Time

V_DD = 200V, I_D = 26A R_G = 25Ω

(Note 4, 5)

- 45 100 ns

t_r Turn-On Rise Time - 100 210 ns

t_d(off) Turn-Off Delay Time - 115 240 ns

t_f Turn-Off Fall Time - 66 140 ns

I_S Maximum Continuous Drain to Source Diode Forward Current - - 26 A

I_SM Maximum Pulsed Drain to Source Diode Forward Current - - 104 A

V_SD Drain to Source Diode Forward Voltage V_GS = 0V, I_SD = 26A - - 1.4 V

t_rr Reverse Recovery Time V_GS = 0V, I_SD = 26A

dI_F/dt = 100A/µs ^{(Note 4)}

- 406 - ns

Q_rr Reverse Recovery Charge - 5.17 - µC

Notes:

1: Repetitive Rating: Pulse width limited by maximum junction temperature 2: L = 4mH, I_AS = 26A, V_DD = 50V, R_G = 25Ω, Starting T_J = 25°C 3: I_SD ≤ 26A, di/dt ≤ 200A/µs, V_DD ≤ BV_DSS, Starting T_J = 25°C 4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%

5: Essentially Independent of Operating Temperature Typical Characteristics

0 N-Channel MOSFET Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage Drain Current and Gate Voltage Variation vs. Source Current and Temperature

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

0.1 1 10

0.1 1 10 70

*Notes:

1. 250µs Pulse Test 2. T_C = 25^oC VGS = 15.0V

10.0V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V

ID,Drain Current[A]

VDS,Drain-Source Voltage[V]

0.02 4 5 6 7 8 9

1 10 100

-55^oC 150^oC

*Notes:

1. V_DS = 20V 2. 250µs Pulse Test 25^oC

ID,Drain Current[A]

VGS,Gate-Source Voltage[V]

0 20 40 60 80

0.10 0.15 0.20 0.25 0.30 0.35

*Note: TJ = 25^oC VGS = 20V VGS = 10V

RDS(ON) [Ω], Drain-Source On-Resistance

ID, Drain Current [A]

0.2 0.6 1.0 1.4

1 10 100

*Notes:

1. V_GS = 0V 2. 250µs Pulse Test 150^oC

IS, Reverse Drain Current [A]

V_SD, Body Diode Forward Voltage [V]

25^oC

0.1 1 10

0 1000 2000 3000 4000 5000

Coss Ciss

Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd

Crss = Cgd

*Note:

1. VGS = 0V 2. f = 1MHz

C_rss

Capacitances [pF]

30 00 10 20 30 40 50

2 4 6 8 10

*Note: ID = 26A VDS = 100V

V_DS = 200V V_DS = 320V

VGS, Gate-Source Voltage [V]

Q, Total Gate Charge [nC]

0 N-Channel MOSFET Typical Performance Characteristics

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area - FDP26N40

Figure 11. Transient Thermal Response Curve - FDP26N40

-75 -25 25 75 125 175

0.8 0.9 1.0 1.1 1.2

*Notes:

1. VGS = 0V 2. ID = 250µA BVDSS, [Normalized] Drain-Source Breakdown Voltage

TJ, Junction Temperature [^oC]

-75 -25 25 75 125 175

0.0 0.5 1.0 1.5 2.0 2.5 3.0

*Notes:

1. V_GS = 10V 2. I_D = 13A RDS(on), [Normalized] Drain-Source On-Resistance

TJ, Junction Temperature [^oC]

1 10 100

0.01 0.1 1 10 100 300

10µs 100µs 1ms 10ms

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

Operation in This Area is Limited by R DS(on)

*Notes:

1. T_C = 25^oC 2. TJ = 150^oC 3. Single Pulse

800 DC

25 50 75 100 125 150

0 4 8 12 16 20 24 28

ID, Drain Current [A]

TC, Case Temperature [^oC]

10^-5 10^-4 10^-3 10^-2 10^-1 10⁰ 10¹

0.01 0.1 1

0.01 0.1 0.2

0.05

0.02 *Notes:

1. ZθJC(t) = 0.5^oC/W Max.

2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.5

Single pulse

Thermal Response [ZθJC]

Rectangular Pulse Duration [sec]

0.002

t1

PDM

t₂

0 N-Channel MOSFET

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

0 N-Channel MOSFET

Peak Diode Recovery dv/dt Test Circuit & Waveforms

D U T

VD S

+

_

D r i v e r R_G

S a m e T y p e a s D U T

VG S • d v / d t c o n t r o l l e d b y R_G

• I_{S D} c o n t r o l l e d b y p u l s e p e r i o d

V_{D D} L

I_{S D}

1 0 V V_{G S}

( D r i v e r )

I_{S D} ( D U T )

V_{D S} ( D U T )

V_{D D}

B o d y D i o d e F o r w a r d V o l t a g e D r o p

VS D

I_{F M} , B o d y D i o d e F o r w a r d C u r r e n t

B o d y D i o d e R e v e r s e C u r r e n t I_{R M}

B o d y D i o d e R e c o v e r y d v / d t d i / d t D = G a t e P u l s e W i d t h

G a t e P u l s e P e r i o d - - - - D U T

VD S

+

_

D r i v e r R_G

S a m e T y p e a s D U T

VG S • d v / d t c o n t r o l l e d b y R_G

• I_{S D} c o n t r o l l e d b y p u l s e p e r i o d

V_{D D} LL

I_{S D}

1 0 V V_{G S}

( D r i v e r )

I_{S D} ( D U T )

V_{D S} ( D U T )

V_{D D}

B o d y D i o d e F o r w a r d V o l t a g e D r o p

VS D

I_{F M} , B o d y D i o d e F o r w a r d C u r r e n t

B o d y D i o d e R e v e r s e C u r r e n t I_{R M}

B o d y D i o d e R e c o v e r y d v / d t d i / d t D = G a t e P u l s e W i d t h

G a t e P u l s e P e r i o d - - - - D = G a t e P u l s e W i d t h

G a t e P u l s e P e r i o d - - - -

0 N-Channel MOSFET Mechanical Dimensions

TO - 220

0 N-Channel MOSFET Mechanical Dimensions

TO-220F

(7.00) (0.70)

MAX1.47

(30

°)

#1

3.30 ±0.1015.80 ±0.20 15.87 ±0.20

6.68 ±0.20

9.75 ±0.30 4.70 ±0.20

10.16

(1.00x45°)

2.54

0.80

9.40

2.76

0.35

ø3.18

2.54TYP [2.54

]

2.54TYP [2.54

]

0.50

Dimensions in Millimeters

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