Low frequency transistor ( 20V, 5A)

(1)

Low frequency transistor (−20V, −5A)

2SB1386 / 2SB1412 / 2SB1326

zFeatures

1) Low V

CE(sat)

.

V

CE(sat)

= −0.35V (Typ.)

(I

C

/I

B

= −4A / −0.1A)

2) Excellent DC current gain characteristics.

3) Complements the 2SD2098 / 2SD2118 /

2SD2097.

zStructure

Epitaxial planar type

PNP silicon transistor

zExternal dimensions (Unit : mm)

(1) Base (2) Collector (3) Emitter ROHM : CPT3 EIAJ : SC-63 2SB1386 2SB1326 2SB1412 (1) Base (2) Collector (3) Emitter ROHM : MPT3 EIAJ : SC-62 (1) Emitter (2) Collector (3) Base ROHM : ATV 1.0 6.8±0.2 2.5±0.2 1.05 0.45±0.1 2.54 2.54 0.5±0.1 0.9 4.4 ± 0.2 14.5 ± 0.5 (1) (2) (3) 0.65Max. ± 0.3 ₋0.1 + 0.2 −0.05 +0.1 −0.1 +0.2 +0.2 −0.1 (3) (2) (1) 4.0 1.0 ± 0.2 0.5 ± 0.1 2.5 3.0±0.2 1.5±0.1 1.5±0.1 0.4±0.1 0.5±0.1 0.4±0.1 0.4 1.5 4.5 1.6±0.1 −0.1 +0.2 −0.1 +0.2 + 0.3 ₋0.1 2.3±0.2 2.3±0.2 0.65±0.1 0.9 0.75 1.0±0.2 0.55±0.1 9.5 ± 0.5 5.5 1.5 ± 0.3 2.5 1.5 2.3 0.5±0.1 6.5±0.2 5.1 C0.5 (3) (2) (1) 0.9

∗

Denotes hFE Abbreviated symbol: BH

∗

(2)

2SB1386 / 2SB1412 / 2SB1326

Transistors

Rev.A 2/4

zAbsolute maximum ratings (Ta=25°C)

Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature

∗

1 Single pulse, Pw=10ms

∗

2 When mounted on a 40×40×0.7 mm ceramic board.

∗

3 Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm2 _{or larger.} Parameter VCBO VCEO VEBO PC Tj Tstg −30 V V V A(DC) °C °C −20 −6 −5 IC A(Pulse) −10

∗

1

∗

3

∗

2 0.5 2 W W W 1 10 W(Tc=25°C) 1 W 2SB1386 2SB1412 2SB1326 150 −55 to 150

Symbol Limits Unit

zElectrical characteristics (Ta=25°C)

Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Output capacitance

∗

Measured using pulse current.

Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob Min. −30 −20 −6 − − 82 2SB1386,2SB1412 2SB1326 −

∗

− − − − − − − − 120 0.35 60 − − − −0.5 −0.5 390 −1.0 − − V IC= −50µA IC= −1mA IE= −50µA VCB= −20V VEB= −5V VCE= −2V, IC= −0.5A IC/IB= −4A/ −0.1A VCE= −6V, IE=50mA, f=100MHz VCB= −20V, IE=0A, f=1MHz V V µA µA − 120 − 390 − V MHz pF

Typ. Max. Unit Conditions

Transition frequency

zPackaging specifications and h

FE

Package Code Taping Basic ordering unit (pieces) T100 TL 1000 2500 − PQR hFE 2SB1386 − TV2 2500 − − PQR 2SB1412 − − QR 2SB1326 Type

hFE values are classified as follows :

Item P Q R

(3)

zElectrical characteristic curves

Fig.1 Grounded emitter propagation characteristics

COLLECTOR CURRENT : I

C

(A)

BASE TO EMITTER VOLTAGE : VBE (V)

0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1m −2m −5m −10m −20m −200m −100m −50m −500m −1 −2 −10 −5 VCE= −2V 25°C −25°C Ta=100°C

Fig.2 Grounded emitter output characteristics

COLLECTOR CURRENT : I

C

(A)

COLLECTOR TO EMITTER VOLTAGE : VCE (V)

0 −0.4 −0.8 −1.2 −1.6 −2.0 −1 −2 −3 −5 −4 0 IB=0A −20mA −25mA −30mA −10mA −5mA −15mA Ta=25°C −50mA −45mA −40mA −35mA

Fig.3 DC current gain vs. collector current ( )

DC CURRENT GAIN : h

FE

COLLECTOR CURRENT : IC (A)

Ta=25°C −2V VCE= −5V −1V −1m−2m−5m−0.01 −0.05 −1 −2 −5−10 100 200 500 1k 2k 5k 50 20 10 5 −0.02 −0.1−0.2 −0.5

DC CURRENT GAIN : h

FE

COLLECTOR CURRENT : IC (A)

VCE= −1V −1m−2m−5m−0.01 −0.05 −1 −2 −5−10 100 200 500 1k 2k 5k 50 20 10 5 −0.02 −0.1−0.2 −0.5 25°C −25°C Ta=100°C

DC CURRENT GAIN : h

FE

COLLECTOR CURRENT : IC (A) −1m−2m−5m−0.01 −0.05 −1 −2 −5−10 100 200 500 1k 2k 5k 50 20 10 5 −0.02 −0.1−0.2−0.5 25°C −25°C Ta=100°C VCE= −2V

Fig.6 Collector-emitter saturation voltage vs. collector current ( )

IC/IB=50/1 /1 Ta=25°C 40/1 30/1 10/1

COLLECTOR SATURATION VOLTAGE : V

CE(sat)

(V)

COLLECTOR CURRENT : IC (A) −1 −2 −5−10 −0.0−-0.02−0.05−0.1−0.2 −0.5 −2m−5m −0.01 −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 −5

Ta=100°C

25°C lC/lB=10

−25°C

CE(sat)

(V)

COLLECTOR CURRENT : IC (A) −1 −2 −5−10 −0.01−0.02−0.05−0.1−0.2 −0.5 −2m−5m −0.01 −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 −5

Ta=100°C

−25°C

25°C lC/lB=30

CE(sat)

(V)

COLLECTOR CURRENT : IC (A) −1 −2 −5−10 −0.01−0.02−0.05−0.1−0.2−0.5 −2m−5m −0.01 −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 −5

Ta=100°C

−25°C 25°C

lC/lB=40

CE(sat)

(V)

COLLECTOR CURRENT : IC (A) −1 −2 −5−10 −0.01−0.02−0.05−0.1−0.2−0.5 −2m−5m −0.01 −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 −5

(4)

2SB1386 / 2SB1412 / 2SB1326

Transistors

Rev.A 4/4

Fig.10 Collector-emitter saturation

voltage vs. collector current ( )

CE(sat)

(V)

COLLECTOR CURRENT : IC (A) −1 −2 −5−10 −0.01−0.02−0.05−0.1−0.2−0.5 −2m−5m −0.01 −2 −1 −0.5 −0.2 −0.1 −0.05 −0.02 −5 −25°C lC/lB=50 25°C Ta=100°C

Fig.11 Gain bandwidth product vs. emitter current

EMITTER CURRENT : IE (mA)

TRANSEITION FREQUENCY : f T (MHz) 1 2 5 10 20 50 100 200 500 20 50 100 200 500 1 000 10 5 2 1 1000 Ta=25°C VCE= −6V

Fig.12 Collector output capacitance vs. collector-base voltage

COLLECTOR OUTPUT CAPACITANCE : Cob

(pF)

COLLECTOR TO BASE VOLTAGE : VCB (V) −0.1−0.2 −0.5 −1 −2 −5 −10−20 −50 1000 500 200 100 50 10 20 Ta=25°C f=1MHz IE=0A

Fig.13 Emitter input capacitance vs. emitter-base voltage

EMITTER

INTPUT CAPACITANCE : Cib

(pF)

EMITTER TO BASE VOLTAGE : VEB (V)

10 20 50 100 200 500 1000 −0.1 −0.2 −0.5 −1 −2 −5 −10 Ta=25°C f=1MHz IC=0A

COLLECTOR TO EMITTER VOLTAGE : −VCE (V)

COLLECTOR CURRENT : I C (A) 0.2 0.5 1 2 5 10 20 50 100200 500 50 5 20 2 10 1 200m 100m 50m 20m 10m 500m 100

Fig.14 Safe operation area

F(2SB1412) DC Ta=25°C

∗

Single nonrepetitive pulse Pw =_10ms Pw =_100ms

(5)

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Notes

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Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set.

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