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Heterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces

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Figure

TABLE I. Calculated charges, dipole moments, and dipole potential steps forSi�111� interfaces.
FIG. 2. Cluster model for Si–dielectric interfaces: �a� abrupt Si�111�–SiO2,�b� abrupt nitrided Si�111�–N–SiO2, and �c� Si�111�–SiO2 with interfacialtransition region with suboxide transition region
FIG. 3. Interface dipole as a function of interface bonding distance from theabatecalculations:�a�abruptSi�111�–SiO2,�b�abruptnitridedSi�111�–N–SiO2, and �c� Si�111�–SiO2, with interfacial transition regionwith suboxide transition
TABLE IV. Summary of results from studies of vicinal Si�111� surfacesoff-cut �5° in the 112 bar direction.

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