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Influence of the ratio of gate length to drain to source distance on the electron mobility in AlGaN/AlN/GaN heterostructure field effect transistors

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Academic year: 2020

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Figure

Figure 1 Measured C-V curves at room temperature of the Ni Schottky contacts. With different areas for the devices with drain-to-sourcedistances of 60 (a), 20 (b), and 15 and 9 μm (c).
Figure 2 Calculated 2DEG electron density n2D under different gate biases. They are for samples with drain-to-source distances of 60 (a), 20(b), and 15 and 9 μm (c).
Figure 4 Relationship between electron mobility of 2DEG and applied gate bias at room temperature

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