A COMPARATIVE STUDY OF PROFITABILITY ANALYSIS OF INDIAN ALUMINIUM INDUSTRY BETWEEN PUBLIC AND PRIVATE SECTOR

ALD: Atomic layer deposition; BE: Bottom electrode; CCL: Compliance current limit; CRS: Complementary resistive switching; DRAM: Dynamic random- access memory; HRS:

The LiNi 0.44 Ga 0.06 Mn 1.5 O 4 sample with the optimum content shows a superior rate performance and cycle stability after Ga doping, especially at a high discharge rate and

Dominantly, there can be two possible reasons for the observed experimental increase of visible level defect states: (i) increase of the aspect ra- tio and (ii) increase of the

Although this review provides an overview of the state-of-the-art methods for forming Ohmic contacts, there is still much space left to be explored, and a set of concise prospects

The switching mechanisms reflect the competition of either the direct and indirect exchange coupling through a uniform spacer or the all-indirect ex- change coupling of

In Fig. 4c , the contact angle decreases and the Raman in- tensity climbs up and then declines as the engraving speed increases. Compared with the contact angle in Fig. 4b and Fig. 4c

The PSi matrix was formed by electrochemical etching of a doped silicon wafer and was further surface-passivated with few-layer graphene sheets by a Ni-assisted chemical