List of Abbreviations
a-C amorphous carbon
AFM atomic-force microscope/microscopy AMLCD active matrix LCD
APD ablative photodecomposition AR antireflective
ASE amplified spontaneous emission BGA ball grid array
BN boron nitride c-BN cubic boron nitride CCD charge-coupled device CE Conformit´e Europ´eenne
CEN European Committee for Standardization CFC chlorofluorocarbon
CMOS complementary metal oxide semiconductor CVD chemical vapor deposition
DLC diamond-like carbon DNA deoxyribonucleic acid DOE diffractive optical elements DoF depth of focus
DPE diffractive phase elements DRAM dynamic random access memory DUV 248 nm, 193 nm
DUV deep UV
EBDW electron beam direct write EDM electro discharge machining EEA European Economic Area EELS electron-energy loss spectroscopy ELA excimer laser annealing
ELIF excimer-laser-induced fluorescence EMC electromagnetic compatibility EMI electromagnetic interference
424 List of Abbreviations
EPL electron projection lithography EUV extreme UV
FBG fiber Bragg grating
FDA Food and Drug Administration (U.S.A.) FDM frequency-domain modulation
FED field emission displays FEL free-electron laser
FEP fluorinated ethylene propylene FHG fourth harmonic generation FSR free spectral range
FWHM full width (at) half maximum GDPP gas-discharge-produced plasma GTO gate turn-off
HAZ heat-affected zone h-BN hexagonal boron nitride HR highly reflective, high-reflective HVM high-volume manufacturing IC integrated circuit
IFTA iterative Fourier transform algorithm IGBT insulated gate bipolar transistor IPL ion projection lithography
ITRS international technology roadmap for semiconductors LASIK laser in-situ keratomileusis
LC liquid crystal LCD liquid crystal display LCVD laser-induced CVD LDE laser dry etching
LIBS laser-induced breakdown spectroscopy LIBWE laser-induced backside wet etching LIDT laser-induced damage threshold LIF laser-induced fluorescence LIFT laser-induced forward transfer
LIGA Lithographie, Galvanik, Abformung = lithography, electroplating, molding
LIPAA laser-induced plasma-assisted ablation LPP laser-produced plasma
LSC laser-supported combustion LSI large scale integrated
LTPS low temperature polysilicon (technology) LVD low voltage directive
List of Abbreviations 425
MALDE microwave-assisted LDE
MAPLE-DW matrix-assisted pulsed laser evaporation-direct writing MCM multichip modules
MMA methyl methacrylate
MOPA master oscillator power amplifier MZ Mach-Zehnder (interferometer) µ-TAS micro total analysis system NA numerical aperture
OLED organic light-emitting diodes OPC optical proximity correction OPD optical path difference
PA polyamide
PaCO2 partial arterial pressure CO2 PaO2 partial arterial pressure O2 PC personal computer
PC polycarbonate
PCB printed circuit board PDMS polydimethyl-siloxane
PE polyethylene
PED pressure equipment directive PEEK poly-ether ether-keton
PES polyester
PET polyethylene-terephthalate PFL pulse forming line
PI polyimide
PLC planar lightwave circuits PLD pulsed laser deposition PMMA polymethyl-methacrylate
PP polypropylene
ppb parts per billion (10−9) ppm parts per million (10−6) PRK photo refractive keratectomy PSM phase shift mask
PTFE polytetrafluoro-ethylene (DuPont: Teflonr) PTK photo therapeutic keratectomy
PU polyurethane
PVC polyvinyl-chloride PVD pulsed vapor deposition
PSU polysulfon
426 List of Abbreviations
REM raster electron microscope/microscopy RIE reactive ion etching
RGH rare gas halide rms root mean square RP retinitis pigmentosa
SCALPEL scattering with angular limitation projection electron-beam lithography
SCP surface corona preionization
SEM scanning electron microscope (=REM)
SEMI Semiconductor Equipment and Materials Institute SLG super lateral growth
SLS sequential lateral solidification SMD surface mounted device SMPS switched mode power supply SMT surface mount technology
SROMA spatially resolving optical multichannel analyser TAB tape automated bonding
ta-C tetrahedral amorphous carbon TE transverse electric
TFT thin film transistor THG third harmonic generation TM transverse magnetic TSI top surface imaging UV ultraviolet
UV-A spectral region A of the UV UV-B spectral region B of the UV VHNA very high numerical aperture VUV 157 nm–50 nm
WC tungsten (wolfram) carbide XRL X-ray lithography
Index
Abbe diffraction limit, 399
ablation, 17, 127, 139, 149f, 155, 162, 179f, 187f, 203, 229f, 336f, 365f rear side ablation, 180, 183 ablation debris, 183, 226, 233f, 249, 269, 271 ablation soot, 238 ablation depths, 2, 142, 150, 155, 203f, 212, 232, 327, 339, 394 ablation of ceramics, 155 ablation of diamond, 329 ablation of glass, 201f, 328 ablation of metals, 151
ablation of polymers, polymer ablation, 20, 167, 187, 189, 212f, 228 ablation of tissue, 361f
ablation plume, 151, 190, 224 ablation photodecomposition, 17 ablative photo decomposition(APD)
139
ablation rate, 151, 172, 189, 203, 213, 218, 227, 229f, 394
ablation etch rates, 227
ablation threshold, 142, 165, 192, 222, 227, 229, 253, 265, 326 absorbance, 169, 361 absorption, 35, 120f, 149, 152, 210, 229, 256, 285, 298f absorption by air, 222, 225 absorption coefficient, 150f, 210, 162, 227, 254, 168, 210, 227, 254, 291, 299, 330, 344 absorption depth, 401
absorption depth of EUV radiation, 401
absorption length, 17, 361 absorptivity, 188
activation of dielectrics, 331
active matrix liquid crystal display (AMLCD), 306
aircraft cable, 321, 324, 330 all-solid-state switching, 56 amorphous carbon (a-C), 335f
amplified spontaneous emission (ASE), 100, 261 annealing, 26, 52, 87, 140, 144, 340, 306f, 340f arc-free discharge, 49 arcing, 49, 52, 54, 75 ArF laser, 76, 82f, 166f, 227f, 253, 260, 297, 304, 327, 361
atomic force microscope (AFM), 227, 230f
attenuator, 122, 128f
bacterial filter, 198 ball grid array (BGA), 194 bar code, 321, 324 batch identification, 321 beam diagnostics, 105, 109, 133f, 225 beam divergence, 110 beam parameter, 107 beam profile, 52, 109, 105f, 112, 131, 133, 135, 187, 244, 311, 317, 390 bilumen catheter, 196 biocompatibility test, 168 biomimetic matrix, 169 biophotonics, 221f biophotonic chip, 272 biophotonics on a chip, 268 birefringence, 231, 254, 257, 259f, 267, 298f
black body radiation, 404 bleaching, 321, 323 Boltzmann distribution, 36 boron nitride (c-BN), 335f, 346
428 Index
borosilicate glass, 182, 201f buried optical waveguide, 254, 264f burst mode operation, 99, 387, 388
C-C transfer, 53 C4 technology, 195 capacitive sensor, 162 car engines, 351 carbon, 140 carbon deposits, 329 carbon fiber, 198, 318, 320 carbon (ta-C) film,140, 335f, castellated electrodes, 271 catheter, 167f, 196, 325, 326, 396 central island phenomenon, 365 ceramics, 140, 153f, 170f, 321, 331 channels, 23, 24, 43, 163, 175, 202, 206f,
221, 231, 234f, 254, 268 plasma channels, 373
chemical vapor deposition (CVD), 206 chrome on quartz, 14 chrome films, 240 chrome layer, 239f chrome mask, 182, 226, 234, 271 chrome-coated optics, 239 chromophores, 149, 150 cleaning, 121, 141f, 160, 161, 207, 233, 234, 240, 241, 249f, 269, 359, 369 cleaning of paintings, 142 cleaning of rotogravure, 160 cleaning of the laser gas, 62f clearing ratios, 75
coatings, 119f, 221, 233, 335f, 385, 394 coatings for X-ray mirrors, 140 cold ablation, 127, 139, 189, 194 collector mirror, 415, 418, 420 collector optics, 401, 403, 405f collisional deactivation, 44 color centers, 254, 298 color changes, 322, 323, 393 combustion analysis, , 351f command resonant charging, 60 compaction, 101, 171, 229, 254f, 298 condom leak-testing, 198
conflict diamonds, 329 conformal scanning, 157
Conformit´e Europ´eenne (CE), 64, 423 congruent evaporation, 140, 339 contact
lenses, 196
contact mask, 156
contamination control system, 64 controlling refractive index, 253f conversion efficiency (CE), 14, 62. 412,
414f
cooling system, 63 corpuscular theory, 33
critical dimension, 98, 304, 399f cubic boron nitride (c-BN), 335, 346 current rise time, 53
customized ablation, 365
cylindrical lenses, cylinder optics, 130, 218, 311 damage fluence, 120, 121 damage threshold, 120, 180, 223, 240, 258 dc resonant, 58, 59, 60 debris, 152, 183, 190f, 203, 214f, 233f, 253, 269, 404, 412, 414f debris filter, 403, 406, 421 debris mitigation, 412, 414
deep ultraviolet (DUV), 15, 90, 94, 98, 119, 123, 266, 297, 302, 423 DUV lithography, 94, 98
deoxyribonucleic acid (DNA), 159, 287 depth of focus (DoF), 91, 132f, 163,
265f, 296f, 302f, 399 detonation waves, 165 dielectric mask, 157, 180, 182 diamond, 232, 242f, 279, 285, 329f, 335, 341 dielectrical sensor, 162
diffractive optical elements (DOE), 116, 182, 198, 221, 222, 245f, 423 diffractive phase elements (DPE), 182,
183
direct multiphoton excitation, 376, 380 discharge arcing, 51 discharge circuit, 48, 52, 53, 386 discharge cross-section, 49, 85f discharge electrodes, 48f, 78, 86 discharge stability, 49, 76, 82, 83 discoloration, 321
double pulse excitation, 57
drilling, 4, 17, 25, 28, 128, 140, 143f, 155, 162f, 187f, 201, 203f, 390 duct oscillations, 77
Index 429
dust filtration, 64 dust precipitator, 64 DUV, see deep ultraviolet
E95%, 95, 96 electrode burn-off, 50, 64 electrode erosion, 49 electrode lifetime, 12, 52 electrode materials, 51, 52, 64 electrode profile, 51, 83 electrode structures, 49
electromagnetic compatibility (EMC), 65, 68, 423
electromagnetic interference, (EMI), 61, 423
electron beam, 81f, 300
electron beam direct write (EBDW), 300
electron beam evaporation, 415 electron beam lithography, 301 electron densities, 49f, 58, 83 electroplating, 176
EMC directive, 65, 423 EMC standards, 65, 67, 68 energy dose control, 98f engraving, 321f, 329 erosion, 22, 52f, 64 erosion rate, 51, 64 etching, 17, 18, 19, 93, 140, 140f, 156, 179f, 228f, 238f, 258f, 295, 302 etendue, 405, 409, 414, 415, 418, 420, 421
European Committee for Standardiza-tion (CEN), 70
European directives, 65, 68 EUV, see extreme ultraviolet
excimer laser transitions, 41, 42 excimer lasers for microlithography,
89f, 303
excimer lasers for medical applications, 361f
exciplexes, 6, 8, 42 excitation rate, 43 excited dimer, 8, 42
extreme ultraviolet (EUV), 91, 121, 124f, 300, 399f, 424 EUV lithography, 125, 399f EUV sources, 399f XUV, 119, 124, 400 XUV coatings, 124f XUV lasers, 126 EUV mask, 402 EUV microstepper, 401, 412f EUV pinhole camera, 410, 411 EUV scanner, 401, 402, 403, 404,
415, 418
EUV spectrograph, 410
F2-laser, fluorine laser, 42, 107, 108, 115, 121, 182, 212f, 301, 349 F2-laser photosensitivity, 254, 258, 263,
265
feature size, 90, 91, 92f, 135, 235, 238, 279, 295, 297f, 400
femtosecond excimer laser, V, 182, 191, 279f
fertility treatment, 197
fiber Bragg grating (FBG), 6, 22, 25, 140, 143,144, 181, 223, 243, 258, 313f
field emission displays (FED), 312 flow clearing (ratio), 75, 76 flow loop, 76, 77f
fluorine passivation, 52 flying spot scanning, 366 free electron laser (FEL), 38, 124 free spectral range (FSR), 96, 261 fuel sprays, 352, 353 fused silica, 94, 101, 129, 132, 152, 156, 179, 180, 182, 183, 188, 221, 227, 229f, 279, 287, 298f, 315 g-line, 92, 296 gas discharge, 11, 41, 51, 82, 402, 419 gas filter, 63, 359 gas lasers, 9, 38, 69 gas lifetime, 11, 50, 88, 388, 397 gas purification, 64 gas-discharge-produced plasma (GDPP), 402, 404, 419 GDPP EUV sources, 406, 414, 420 germanosilica, 229, 254, 263, 268 glass marking, 144, 328 glaucoma surgery, 361, 367
glow discharge instability, 48, 58, 83 Gordon Moore, 89, 295
430 Index
gratings, 140, 174, 182, 238, 243, 258, 262, 282, 314
halogen gas loss, 64 halogen injections, 64 harpooning reaction, 43
Hartmann-Shack wavefront sensor, 114 heat diffusion length, 152
heat exchanger, 63, 81 heat-affected layer , 232
heat-affected zone (HAZ), 17, 140, 168, 193, 228, 231f, 279, 321, 325, 424 hidden identification marks, 328 high-resolution mask imaging, 311 high-average-power excimer lasers, 79 high-energy lasers, 81
high-power excimer lasers, 59, 75, 130, 307
high-repetition-rate, 75, 76, 385 high-repetition-rate excimer lasers, 14,
75, 50, 56, 173, 390 high-temperature superconducting films, 335 high-volume lithography, 14 high-volume manufacturing (HVM), 43, 400, 421 hole drilling, 17, 187, 192, 197 hollow atoms, 373, 377, 379 hollow plasma channels, 373 homogenized beams, 112 homogenizer, 112, 130, 133, 159, 187, 311 hyperopic eye, 362 i-line, 26, 92, 296 identification codes, 144, 321, 328 imaging optics, 156, 296, 402 immersion fluid, 91 immersion lithography, 121, 221, 399 implant materials, 169
in-band energy meter, 410
incubation, 174, 188, 207, 229, 247, 253, indirect ablation, 179
injector channels, 269, 270
ink jet nozzles, 25, 127, 144, 167, 322, 390
interference of multiple beams, 281, 282 intermediate focus, 403, 405, 412, 418 intermediate focus power, 414, 421
k-factor, 399, 400, kinetic energy, 164, 336, 337, 338, 341, 408 kinoforms, 182, 246 KrF laser, 1, 9, 14, 42f, 82f, 84, 97, 99f, 111f, 112, 126, 144, 161, 169, 172, 183, 187, 247, 258, 280, 317, 331, 361, 377 L-C inversion circuit, 55, 56 lab-on-(a)-chip, 201, 234, 269, 393 large-area ablation, 365 laser activation, 331, 333 laser angioplasty, 361, 369
laser beam characterization, 105, 116 laser cavity, 37, 54
laser cleaning, 141, 142, 147 laser chemical vapor deposition
(LCVD), 140, 141, 144, 146 laser dry etching (LDE), 141, 146 laser engraving, 321
laser in-situ keratomileusis (LASIK), 19, 143, 144, 361, 364
laser radiation safety, 65, 70, laser resonator, 37, 94, 133, laser sputtering, 140
laser vision correction, 28, 143, 144 laser-induced backside wet etching (LIBWE), 179, 180, 243, 247 laser-induced breakdown spectroscopy
(LIBS), 142
laser-induced chemical vapor deposition (LCVD), 140, 141, 144, 146 laser-induced damage threshold
(LIDT), 120
laser-induced fluorescence (LIF), 29, 203, 287, 351, 356
laser-induced forward transfer (LIFT), 183, 285
laser-induced plasma-assisted ablation (LIPAA), 180, 243
laser-produced plasma (LPP), 406, 409, 412, 417, 421
laser-produced plasma EUV sources, 408, 417
LASIK, 19, 143, 144, 361, 364, 424 leak detectors, 174
Index 431
LIGA, 176, 424
light amplification, 6, 36, 124 line beam optics, 311 line narrowing, 94, 97, 103
liquid-crystal displays, 243, 306, 309, 424
lithium target material, 415
lithography, 5, 12, 27, 71, 89, 93, 100, 140, 401
lithography equipment, 15, 401 lithography lenses, 163 logos, 321
long optical pulses, 57, 88 long-term testing, 394 loss processes, 43, 44, 49 low-voltage directive, 65, 68, 70 LPP sources, 404, 417, 421
machinery directive, 65, 69, 70 magnetic pulse compression, 54, 56 magnetic self-focusing, 407 magnetic switch, 12, 55, 57, 402 marking, 321 marking depth, 324, 330 marking of diamonds, 329 marking of spectacles, 327 mask fabrication, 10, 156, 185, 222, 238 mask projection, 11, 128, 134, 156, 172, 201, 211, 216, 244,281, 323 mask projector, 157 mask writing, 26, 223, 301 matrix-assisted pulsed laser
evaporation-direct writing (MAPLE-DW), 331, 425 Max Planck, 11, 12, 33 metallization of dielectrics, 331 metals, 122, 151, 155, 174, 243, 280f, 321f, 358 micro channels, 10, 206, 222, 235, 268, 269 (see also ”channels”) micro-electric mechanical systems
(MEMS), 183, 221, 233 micro fabrication, 144, 149f, 275, 281 microfluidic channels, 221, 234, 268,
269, 271, 274 micro fluidics, 209
microfluidic test structure, 175 micro gears, 173 micro-lens arrays, 234 micro lenses, 115, 181, 183 microlithography, 26, 56, 89, 91,92, 95, 98, 102, 127, 143, 144, 295, 303, 394 micro machining, 155, 286, 351, micro-machining distortion, 232 micro-machining workstation, 286 micro nozzles, 174 micro-optics fabrication, 181, 234 micro parts, 174
micro reaction systems, 217
micro structuring, 25, 144, 153, 177, 185
micro vias, 193, 194, 196, 222, 269 Mie scattering, 352
minimum feature size, 92, 400 mixer structures, 218
Moore’s Law, 89, 295
multi-component ceramics, 140 multichip modules, 17, 194, 425 multilayer mirrors, 126, 402, 410 multilayer printed circuit boards
(PCBs), 192, 425 multilayer-coated mirrors, 401 multilayer tool, 410 multipass-illuminator, 158 myopic eyes, 361, 362 nano-lithography, 5 nano-scale fabrication, 279 nano-structuring, 5
nano-structuring with femtosecond excimer laser pulses, 279 nanofabrication, 183, 221 node, 92f, 121f, 300f, 399f nozzle, 25, 77, 127f, 144, 163, 174, 196f, 224, 390, 410, 417 one-shot-marking, 330 optical fiber, 6, 186, 196, 229, 233, 237, 244f, 258f, 275, 313, 314, 359, 368 optical lithography, 89, 91, 119, 126, 295, 299f, 399f optical materials, 119, 132, 182, 243, 253, 281, 298f, 385, 395 optical penetration depth, 150, 152,
153, 155, 233, 265, 298 optical resolution, 296 optics protection, 416
432 Index
organic light-emitting diode (OLED), 312
overshoot behavior, 387
parallel hole drilling, 199 particle contamination, 152, 402 particle theory of light, 33 particulate reduction, 340 particulates, 233, 302, 339f passivation, 52, 64, 195f, 295 pellicle, 302, 303 pharmaceuticals, 326 phase elements, 182, 423 phase mask method, 314f
phase shift mask (PSM), 300, 425 photo refractive keratectomy (PRK),
361, 425
photo therapeutic keratectomy (PTK), 363, 425 photonic crystals, 279, 282, photosensitive fiber, 314 photosensitivity response, 253f pinch effect, 407 pinch plasma, 407 Planck’s formula, 404 plasma cleaning, 64 plume ejection, 288 polymer tubes, 216 polymers, 19, 132, 143, 149f, 177f, 201, 212f, 221f ,310 population inversion, 34f, 52 porous-metal cooling, 413, 415 power supply topologies, 59 powerplants, 351, 358 precipitation system, 64 precise depth profiling, 179 precision orifice, 173
preionization, 9, 49f, 85f, 386, 407, 426 pressure equipment directive, 65, 68 pressure waves, 76, 369
profile of the laser beam, 51 projection lenses, 94, 132, 135 psoriasis, 370
pulse compression techniques, 56 pulse forming line (PFL), 57, 425 pulse length, 100, 101, 121, 150, 303 pulsed laser deposition (PLD), 29, 140,
342, 346, 404, 425 pulser, 52, 57f
pump energy densities, 52 pump power densities, 43 purge systems, 63 Pyrex, 201 radiation-damage, 253 Raman scattering, 352, 353, 355, 356 Rayleigh scattering, 352, 356 reaction channels, 43
rear side ablation patterning, 183 reduction of particulates, 340, 341, 350 refractive eye surgery, 357, 396 refractive index modulation, 314 refractive laser surgery, 19, 361 resists, 20, 98, 176, 226, 242, 298, resonant charging, 58, 59, 60 resonant regulating pulsed power, 60 restoration, 142 reticle, 298, 301, 302, 401, 402 retina implant, 169 safety standards, 64, 65, 68,71 screen electrodes, 49, 51 selective micro-deposition, 285 SEMI standards, 71, 426 semiconductor lasers, 22, 38, 39 semiconductor switches, 56, 61 sensor networks, 313, 318, 319 sequential lateral solidification (SLS),
310
shaping lens surfaces, 234 shock wave, 64, 76, 151, 285 silica glasses, 228, 233, 254, 266 silicon thin films, 306
silicones, 169
solid-state lasers, 3, 38, 165, 312, 385 solid-state switch module, 386 solid-state switching, 56, 57 soot, 190, 233
spark preionization, 49, 50, 86 spatial light modulator (SLM), 391 spiker-sustainer circuits, 57, 58 spinnerets, 173 spontaneous emission, 35, 36, 44, 100, 356, 379 SQUID, 140, 171, 185 stents, 216 step-and-repeat, 157, 387 stimulated emission, 6, 34, 36, 43, 374
Index 433
stoichiometry of multicomponent targets, 339
strain, 319, 320
streamer and arc formation, 48 stress relaxation, 340, 343, 349
stroboscopic Schlieren images, 285, 288, 289, 290
super-lateral growth (SLG), 309 superhard coatings, 335, 336, 349 support system, 133
surface cleaning, 6, 141
surface corona preionization (SCP), 50 surface mount technology, 194
surface mounted devices (SMDs), 326 surface-discharge pre-ionization, 407 surface-guided discharges, 50 sustainer, 57, 58
switched mode power supply (SMPS), 58, 61, 62 switching technology, 57, 58 technical combustion, 351, 356 technology nodes, 89, 93, 400 technology roadmap, 90, 221, 300 telecommunication components, 181, 243 test leaks, 174 TFT annealing, 140, 143, 306, Theodore H. Maiman, 6, 35, 39 thermo-elastic shock wave, 286, 292 thick ta-C films, 344, 345 thin film transistors, 26, 306 threshold fluence, 150, 165, 227, 230, 280 through-holes, 159, 174, 193, 197, 235 thyratron tube, 53 thyristor-switched compressor, 56 time resolved Schlieren imaging, 287
tin-vapor-based, 415
trabecular meshwork, 367, 368 trabeculotomy, 367, 368 triatomic gases, 44
trimming planar lightwave circuits, 261
Ultra-fast UV Laser Transfer, 285 UV preionization, 9, 49, 86 UV solid-state lasers, 330 UV-coating, 119
vacuum-ultraviolet optical tools, 222 vector marking, 330 via drilling, 144, 187 voltage regulation, 60 wave theory, 33 wave-particle duality, 33 wavefront analysis, 28, 396 wavefront measurement, 114, 115 waveguides, 165, 237, 238, 264, 265 wavelength control, 95 wear-resistant coatings, 339, 343 Willard H. Bennet, 407 window contamination, 51 wire stripping, 144, Wolter telescopes, 401 X-ray, 38, 49, 124, 176, 339, 380 X-ray preionization, 13,87 X-ray source, 86, 373 XeCl laser, 12f, 42f, 82, 85f, 113, 171, 199, 287, 353, 368, 370 XeF, 9f, 42, 144, 187, 322, 331, 356 xenon target, 402, 417 XUV coatings, 124, 126 Z-pinch, 407, 408, 411
