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Future Semiconductor Devices for Multi Valued Logic Circuit Design

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Figure

Figure 1. Resonant tunneling diode (RTD): (a) No bias, source and well energy levels not matched, no conduction
Figure 3(a)deposited on top of the gate insulator in QDGFET.
Figure 5. Device simulation shows the tunneling of electron wave function from inversion channel to different quantum dot layers when gate voltage increases from (a) to (d) gradually [30]
Figure 7. ID vs. VGS characteristic of a fabricated QDCFET.
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