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Modeling of Noise Power Spectral Density Analysis for GaN/AlGaN HEMT

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Figure

Figure 1(b) shows the 2DEG produced between GaN and AlGaN semiconductor materials. Fermi level of both the bands must be equal for the conduction takes place
Table 1. Material properties of semiconductors at 300 K.
Table 2. List of parameters used in equations and their values that are used to obtain results
Figure 4 andthat the drain current is higher for nanometer GaN HEMT with increasing gate voltage and/or drain voltage compare to micrometer GaN HEMT
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