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Impacts of Thermal Atomic Layer Deposited AlN Passivation Layer on GaN on Si High Electron Mobility Transistors

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Figure

Fig. 1 Schematic diagram of the structure of AlGaN/GaN HEMTs (a), and C-V test structure (b)
Fig. 5 Comparisons of ID-VGS results at VDS = 4 V of the devices before and after a thermal ALD-grown AlN, b PECVD-deposited SiN passivation

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