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AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique

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Figure

Figure 1a,b shows the schematic cross section of theSchottky gate HEMTs (SGHEMTs) and the AlN HEMTs
Figure 4 C-V characteristics of Ni-Au/AlGaN-GaN Schottky diodeand Ni-Au/AlN/AlGaN-GaN MIS diode.
Figure 8 Relationship between breakdown voltage andgate-drain spacing LGD. Inset: three-terminal off-state breakdowncharacteristics of an AlN-MISHEMT with LGS = 1 μm, LG = 2.5 μm, andLGD = 10 μm at VGS = −7 V.

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