NPN General Purpose Transistor

(1)

NPN General Purpose Transistor

BC847B

zFeatures

1) BV

CEO

< 45V (I

^C

=1mA) 2) Complements the BC857B.

zPackage, marking, and Packaging specifications

BC847B

SST3 G1F T116 3000 Part No.

Packaging type Marking

Code

Basic ordering unit (pieces)

zExternal dimensions (Unit : mm)

ROHM : SST3 (1) Emitter

(2) Base (3) Collector

0~0.1 0.2Min.

2.4±0.2

1.3

0.95 0.45±0.1

0.4 0.15 2.9±0.2 1.9±0.2 0.95 0.95

+0.2 −0.1

−0.1+0.2

−0.06+0.1 +0.1−0.05

(2) (1)

(3)

All terminals have the same dimensions

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol

VCBO

V^CEO VEBO

IC

Tj Tstg

Limits 50 45 6 0.1

0.35 150

−65 to +150

Unit V V V A PC ∗

0.2 W

°C

°C Collector-base voltage

Collector-emitter voltage Emitter-base voltage Collector current

Junction temperature Storage temperature Collector power dissipation

∗ When mounted on a 7×5×0.6mm ceramic board.

zElectrical characteristics (Ta=25°C)

Parameter Min. Typ. Max. Unit Conditions

50 45 6

−

− 15

5

V V V

µA nA

IC=50µA IC=1mA I^E=50µA VCB=30V

VCB=30V, Ta=150°C

−

0.58 − 0.77 V

− − 0.6 IC/IB=100mA/5mA

− − 0.25

V IC/IB=10mA/0.5mA V^CE/I^C=5V/10mA

200 450 −

−

200 3

−

MHz pF

VCE=5V, IE=−20mA, f=100MHz VCB=10V, I^E=0, f=1MHz Symbol

BVCBO

BVCEO

BV^EBO ICBO

V^BE(on) VCE(sat)

hFE

fT

Cob

− − =0.5V, I=0, f=1MHz

Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current

Base-emitter saturation voltage Collector-emitter saturation voltage

DC current transfer ratio Transition frequency Collector output capacitance

(2)

zElectrical characteristic curves

The electrical characteristic curves for these products are the same as those of UMT222A, SST222A, MMST2222A and PN2222A.

0 80

60

40

20 100

2.0

0 1.0

IB=0mA 0.1 0.2 0.4 0.6 0.8 1.0 Ta=25°C 1.2

IC−COLLECTOR CURRENT (mA)

VCE−COLLECTOR-EMITTER VOLTAGE (V)

Fig.1 Grounded emitter output characteristics ( )

0 8.0

6.0

4.0

2.0 10.0

2.0

0 1.0

IB=0µA 5 10 15 20 25 30 35

Ta=25°C

IC-COLLECTOR CURRENT (mA)

VCE-COLLECTOR-EMITTER VOLTAGE (V)

Fig.2 Grounded emitter output characteristics ( )

Ta=25°C

0.1 1.0 10 100 1000

100 1000

10

hFE-DC CURRENT GAIN

VCE=10V

1V 5V

Fig.3 DC current gain vs. collector current ( )

VCE=5V

0.1 1.0 10 100 1000

100 1000

10

hFE-DC CURRENT GAIN

IC-COLLECTOR CURRENT (mA) Ta=125°C

Ta=25°C Ta=−55°C

Fig.4 DC current gain vs. collector current ( )

(3)

Ta=25°C VCE=5V f=1kHz

0.01 0.1 1 10 100

100 1000

10

hFE-AC CURRENT GAIN

Fig.5 AC current gain vs. collector current

Ta=25°C IC/IB=10

0.1 1.0 10 100

0.08 0.18 0.16

0.12

0.04

0

VCE(SAT)COLLECTOR EMITTER SATURATION VOLTAGE (V)

Fig.6 Collector-emitter saturation voltage vs. collector current

Ta=25°C IC/IB=10

0.1 1.0 10 100

0.8 1.2 1.8 1.6

0.4

0

VBE(SAT)BASE EMITTER SATURATION VOLTAGE (V)

Fig.7 Base-emitter saturation voltage vs. collector current

Ta=25°C VCE=5V

0.1 1.0 10 100

0.8 1.2 1.8 1.6

0.4

VBE(ON)BASE EMITTER VOLTAGE (V) 0

Fig.8 Grounded emitter propagation characteristics

Ta=25°C IC/IB=10

1.0 10 100

100 1000

10

ton-TURN ON TIME (ns)

Fig.9 Turn-on time vs. collector current

Ta=25°C IC/IB=10

1.0 10 100

100 1000

10

tr-RISE TIME (ns)

IC-COLLECTOR CURRENT (mA) VCC=40V

Fig.10 Rise time vs. collector current

Ta=25°C IC=101B1=101B2

1.0 10 100

100 1000

10

tS-STORAGE TIME (ns)

IC-COLLECTOR CURRENT (mA) VCE=15V

40V 3V

Fig.11 Storage time vs. collector current

(4)

Ta=25°C VCC=40V IC=101^B1=101^B2

1.0 10 100

100 1000

10

tf-FALL TIME (ns)

Fig.12 Fall time vs. collector current

Ta=25°C f=1MHz

0.5 1 10 5

Ta=25°C

0.5 10 100 500

5.0 50

VCE COLLECTOR-EMITTER VOLTAGE (V)0.5

IC-COLLECTOR CURRENT (mA) 400MHz 400MHz

300MHz 200MHz 100MHz

Fig.14 Gain bandwidth product

0 10

100

1

CAPACITANCE (pF)

REVERSE BIAS VOLTAGE (V) Cib

Cob

Fig.13 Input/output capacitance vs. voltage

Ta=25°C VCE=5V

0.5 1.0 10 100 500

100 1000

CURRENT GAIN-BANDWIDTH PRODUCT (MHz) 10

Fig.15 Gain bandwidth product vs. collector current

Ta=25°C VCE=6V f=270Hz

0.1 1 10 100

10

1 100

0.1

h PARAMETER NORMALIZED TO 1mA

IC-COLLECTOR CURRENT (mA) hfe hfe

hre hoe

hoe hie

hie hre

IC=1mA hie=7.8kΩ hfe=280 hre=4.5×10⁻⁵ hoe=7.5µS

Fig.16 h parameter vs. collector current

VCB=30V

0 25 50 75 100 125 150

100P

10P

1P 10n

1n

ICBO-COLLECTOR CUTOFF CURRENT (A)0.1P

TA-AMBIENT TEMPERATURE (°C)

Fig.17 Collector cutoff current

Ta=25°C VCE=5V IC=100µA RS=10kΩ

10 100 1k 10k 100k

6 12

10

8

4

2 0

NF NOISE FIGURE (dB)

f-FREQUENCY (Hz)

Fig.18 Noise vs. collector current

0.01 0.1 1 10

10k

1k 100k

100

RS-SOURCE RESISTANCE (Ω)

IC-COLLECTOR CURRENT (mA) 8dB 12dB

3dB 5dB NF=1dB

Fig.19 Noise characteristics ( )

(5)

0.01 0.1 1 10

10k

1k 100k

100

IC-COLLECTOR CURRENT (mA) 12dB 8dB 3dB5dB NF=1dB

0.01 0.1 1 10

10k

1k 100k

100

IC-COLLECTOR CURRENT (mA) 8dB 12dB 3dB5dB NF=1dB

0.01 0.1 1 10

10k

1k 100k

100

IC-COLLECTOR CURRENT (mA) 3dB 5dB 8dB NF=1dB

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The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance.

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices.

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Products listed in this document are no antiradiation design.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan.

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.