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Band offsets of non polar A plane GaN/AlN and AlN/GaN heterostructures measured by X ray photoemission spectroscopy

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Figure 1 XPS spectra of all samples. Ga 3d XPS spectra for (a) GaN, (c) GaN/AlN, and (e) AlN/GaN samples and Al 2p XPS spectra for (b) AlN, (d)GaN/AlN, and (f) AlN/GaN
Table 1 Binding energies (in eV) of the XPS peaks andVBM for GaN, AlN, GaN/AlN, and AlN/GaN samples
Figure 2 Energy band diagram of non-polar (a) GaN/AlN and(b) AlN/GaN heterojunctions. Apparent valence-band offsets without(the solid lines) and with (the dashed lines) a strain-induced piezoelectricfield in the heterojunction overlayers.

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