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Temporary surface passivation for characterisation of bulk defects in silicon : a review

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Figure

Figure 1. S versus effective lifetime (τeff) for material with a τbulk of1–50 ms and wafer thickness of 200 μm
Figure 3 plots the upper limit surface recombination velocity of
Table 1. Summary of significant temporary “liquid immersion” passivation studies from the literature
Table 2. Summary of significant temporary “thin film” passivation studies from the literature
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