• No results found

MOSFET BSS126I. SIPMOS Small-Signal-Transistor

N/A
N/A
Protected

Academic year: 2021

Share "MOSFET BSS126I. SIPMOS Small-Signal-Transistor"

Copied!
10
0
0

Loading.... (view fulltext now)

Full text

(1)

1 Rev.2.0,2020-06-02 Final Data Sheet

1

2

3

SOT-23 Drain Pin 3 Gate Pin 1 Source Pin 2

MOSFET

SIPMOS

®

Small-Signal-Transistor

Features

•N-channel •Depletionmode •dv/dtrated •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

Productvalidation

FullyqualifiedaccordingtoJEDECforIndustrialApplications

Table1KeyPerformanceParameters

Parameter Value Unit

VDS 600 V

RDS(on),max 700 Ω

IDSS,min 0.007 A

Type/OrderingCode Package Marking RelatedLinks

(2)

-TableofContents

Description . . . 1

Maximum ratings . . . 3

Thermal characteristics . . . 3

Electrical characteristics . . . 3

Electrical characteristics diagrams . . . 5

Package Outlines . . . 9

Revision History . . . 10

Trademarks . . . 10

(3)

3 Rev.2.0,2020-06-02 Final Data Sheet

1Maximumratings

atTA=25°C,unlessotherwisespecified

Table2Maximumratings

Values

Min. Typ. Max.

Parameter Symbol Unit Note/TestCondition

Continuous drain current ID

-0.021 0.017 A TA=25°C TA=70°C

Pulsed drain current ID,pulse - - 0.085 A TA=25°C

Reversediodedv/dt dv/dt - - 6 kV/µs Idi/dt=200A/µs,Tj,max=150°CD=0.016A,VDS=20V,

Gate source voltage VGS -20 - 20 V

-ESD sensitivity (HBM) as per

JESD22-A114 - -

-Class 0 (0 >250 V)

-

-Power dissipation Ptot - - 0.50 W TA=25°C

Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56

2Thermalcharacteristics

Table3Thermalcharacteristics

Values

Min. Typ. Max.

Parameter Symbol Unit Note/TestCondition

Thermal resistance, junction - ambient,

minimal footprint RthJA - - 250 K/W

-3Electricalcharacteristics

atTj=25°C,unlessotherwisespecified

Table4Staticcharacteristics

Values

Min. Typ. Max.

Parameter Symbol Unit Note/TestCondition

Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=-5V,ID=250µA

Gate threshold voltage VGS(th) -2.7 -2.0 -1.6 V VDS=3V,ID=8µA

Drain-source cutoff current ID(off)

-0.1 10 µA VDS=600V,VGS=-5V,Tj=25°C VDS=600V,VGS=-5V,Tj=125°C

Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V

On-state drain current IDSS 7 - - mA VGS=0V,VDS=25V

Drain-source on-state resistance RDS(on) -320 280 700 500 Ω VGS=0V,ID=3mA VGS=10V,ID=16mA Transconductance gfs 0.008 0.017 - S |VDS|>2|ID|RDS(on)max,ID=0.01A

(4)

Table5Dynamiccharacteristics

Values

Min. Typ. Max.

Parameter Symbol Unit Note/TestCondition

Input capacitance Ciss - 21 - pF VGS=-5V,VDS=25V,f=1MHz

Output capacitance Coss - 2.4 - pF VGS=-5V,VDS=25V,f=1MHz

Reverse transfer capacitance Crss - 1.0 - pF VGS=-5V,VDS=25V,f=1MHz

Turn-on delay time td(on) - 6.1 - ns VRDD=300V,VGS=-3B7V,ID=0.01A,G=6

Rise time tr - 9.7 - ns VRDD=300V,VGS=-3B7V,ID=0.01A,G=6

Turn-off delay time td(off) - 14 - ns VRDD=300V,VGS=-3B7V,ID=0.01A,G=6

Fall time tf - 115 - ns VRDD=300V,VGS=-3B7V,ID=0.01A,G=6

Table6Gatechargecharacteristics

Values

Min. Typ. Max.

Parameter Symbol Unit Note/TestCondition

Gate to source charge Qgs - 0.05 - nC VDD=400V,ID=10mA,VGS=-3to5V

Gate to drain charge Qgd - 1.2 - nC VDD=400V,ID=10mA,VGS=-3to5V

Gate charge total Qg - 1.4 - nC VDD=400V,ID=10mA,VGS=-3to5V

Gate plateau voltage Vplateau - 0.10 - V VDD=400V,ID=10mA,VGS=-3to5V

Table7Reversediode

Values

Min. Typ. Max.

Parameter Symbol Unit Note/TestCondition

Diode continous forward current IS - - 0.016 A TA=25°C

Diode pulse current IS,pulse - - 0.064 A TA=25°C

Diode forward voltage VSD - 0.81 1.2 V VGS=-5V,IF=16mA,Tj=25°C

Reverse recovery time trr - 160 - ns VdiF/dt=100A/µsR=300V,IF=0.01A,

(5)

5 Rev.2.0,2020-06-02 Final Data Sheet

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation TA[°C] P tot [W] 0 40 80 120 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 Ptot=f(TA) Diagram2:Draincurrent TA[°C] I D[A] 0 40 80 120 160 0.000 0.005 0.010 0.015 0.020 0.025 ID=f(TA);VGS≥10V Diagram3:Safeoperatingarea VDS[V] I D[A] 100 101 102 103 10-4 10-3 10-2 10-1 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TA=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] Z thJA [K/W] 10-4 10-3 10-2 10-1 100 101 102 101 102 103 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 ZthJA=f(tp);parameter:D=tp/T

(6)

Diagram5:Typ.outputcharacteristics VDS[V] I D[A] 0 4 8 12 16 0.00 0.01 0.02 0.03 0.04 1 V 0.5 V 0.2 V 0.1 V 0 V -0.1 V -0.2 V 10 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] R DS(on) [] 0.00 0.01 0.02 0.03 0.04 0 100 200 300 400 500 600 700 800 900 1000 -0.2 V -0.1 V 0 V 0.1 V 0.2 V 0.5 V 1 V 10 V RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] I D[A] -2 -1 0 1 0.000 0.005 0.010 0.015 0.020 0.025 ID=f(VGS);VDS=10V;Tj=25°C Diagram8:Typ.forwardtransconductance ID[A] g fs[S] 0.000 0.005 0.010 0.015 0.020 0.000 0.005 0.010 0.015 0.020 0.025 gfs=f(ID);Tj=25°C

(7)

7 Rev.2.0,2020-06-02 Final Data Sheet

Diagram9:Drain-sourceon-stateresistance Tj[°C] R DS(on) [] -60 -20 20 60 100 140 180 0 200 400 600 800 1000 1200 1400 1600 max typ RDS(on)=f(Tj);ID=3mA;VGS=0V Diagram10:Typ.gatethresholdvoltage Tj[°C] V GS(th) [V] -60 -20 20 60 100 140 180 -3.5 -3.0 -2.5 -2.0 -1.5 -1.0 max typ min VGS(th)=f(Tj);VDS=3V;ID=8µA;parameter:ID Diagram11:Typ.capacitances VDS[V] C [pF] 0 10 20 30 10-1 100 101 102 Ciss Coss Crss C=f(VDS);VGS=-3V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] I F[A] 0.0 0.5 1.0 1.5 2.0 10-3 10-2 10-1 25 °C 25 °C, max 150 °C 150 °C, max IF=f(VSD);parameter:Tj

(8)

Diagram13:Typ.gatecharge Qgate[nC] V GS [V] 0.0 0.4 0.8 1.2 1.6 -4 -3 -2 -1 0 1 2 3 4 5 6 120V 300V 480V VGS=f(Qgate);ID=0.01Apulsed;parameter:VDD Diagram14:Drain-sourcebreakdownvoltage Tj[°C] V BR(DSS) [V] -60 -20 20 60 100 140 180 500 540 580 620 660 700 ID=f(VGS);VGS=-3V;Tj=25°C

(9)

9 Rev.2.0,2020-06-02 Final Data Sheet

5PackageOutlines

(10)

RevisionHistory

BSS126I

Revision:2020-06-02,Rev.2.0

Previous Revision

Revision Date Subjects (major changes since last revision) 2.0 2020-06-02 Release of final version

Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ¯2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

References

Related documents

( E ) Quantification of mitochondrial calcium responses of mitochondria in contact and not in contact with lysosomes following TRPML1 activation with ML-SA1 (31.25 μ M) in live

Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components

understanding of the situation of individuals in poverty” (3), “the poverty simulation changed the way individuals related to low income families” (4), “the experience did not

The breadth of our product line is un-matched and includes serial to fiber optic converters, fieldbus repeaters for all major fieldbus protocols, managed and unmanaged Ethernet

Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2017-01-20 Advance All Target specifications for proposed product.. 02 2017-05-11 Production

techniques to address the optimal investment-portfolio problem allowing the agent to choose the retirement date..

Revision Date Subjects (major changes since last revision) 2.0 2021-01-26 Release of final version. 2.1 2021-02-01 Update format

AC...alternating current value DC...direct current value BE ...basis-emitter value CS...current sense value OPTO..optocoupler value P ...primary side value Pk...peak