New Products and
Projects
New silicon detector fabrication line
Next generation – SDD
plus
Series
Planar Thin Windows
Robust SDD Module
SPEEDY BSE Detector
The pnCCD Cameras
We keep you informed…
More than 10 years of research and development in the field of cutting-edge silicon radiation detectors lead to the success and high performance of PNDetector’s and PNSensor’s products and projects.
Highlights of recent years are:
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Market leadership in EDX detectors for microanalysis due to the excellent quality of our Silicon Drift Detectors (SDDs with integrated FET, large solid angle, best energy resolution, optimum light element performance and high throughput capacity).
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Award Winner for the most innovative product for a TEM application (custom specific ultrafast EDX solution).
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Various publications in Nature on measurements with our pnCCDs which are the largest parallel-readout CCD sensors for Free Electron Laser (FEL) applications available.
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Advanced solutions for a wide variety of synchrotron applications with our portfolio of large area detectors.
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Successful integration of focal plane X-ray imaging detectors based on DEPFET Active Pixel Sensor for ESA’s Mercury mission BepiColombo.
Content
The extra large detector SDD field (600 mm2) has been designed for synchrotron applications.) has been designed for synchrotron applications.) has been designed for synchrotron applications.
PND presents their new Planar Thin Window technology for the housing of the detector modules.
The next generation SDDs minimizes the gap to the theoretical measurement limit.
PNS offers compact pnCCD systems for e. g. XRF imaging or as directly converting device for single electron detection in a TEM.
PND & PNS introduce their own advanced clean room for silicon detector fabrication, mounting and testing.
PND offers now a Robust SDD Module for harsh environmental requirements.
The BSE Detector features strongly increased collection efficiency and real TV speed imaging capability.
Editorial
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New silicon detector fabrication line
Status
The clean room construction started in April 2013 and will be finished in September 2013. The first production of qualification devices will start in January 2014. Its successful completion will be celebrated in a Grand Opening in Summer 2014.
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We are aiming for:
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Best performancer
Optimized throughputr
Reliability & quality controlr
Flexibility & efficiencyr
Custom specific solutionsr
Advanced technologiesr
Modern equipmentr
Sophisticated designsPNDetector is expanding
PNDetector’s new clean room will be a worldwide unique facility dedicated to the fabrication of state-of-the-art silicon detectors of highest quality. The clean room design is optimized to permit a continuous and efficient production flow from the raw material, 6 - 8 inch FZ silicon wafers of highest purity level, to the finalized product.
The fully equipped clean room will include various areas of dedicated semiconductor fabrication as well as modern packaging facilities and laboratories for test and qualification, divided in different zones of clean room classes 10 - 1000. The fferent zones of clean room classes 10 - 1000. The ff facilities are situated on the Siemens technology campus in Munich, Germany.
The construction and qualification will take place in two phases:
In Phase 1 a clean room of 400 m2 will be built up for the fabrication and qualification of double sided, high resolution spectroscopic detectors and imagers.
In Phase 2 the clean room will be expanded to 600 m2 by new testing and mounting laboratories featuring highest quality standard and advanced equipment.
Phase 1 Phase 2 Silicon wafers to to Detector Modules SDD Chips, PTWs, pin diodes, pnCCDs …
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Standard plus
SDD
plus-10-128pnW PTW
SDDplus FET round housing typ. 127 eV FWHM
10.0 mm2 x 450 μm outer diameter 15 mm @ MnK, -20°C, 10 - 100 kcps round shape design Ø 3.2 mm Zr collimator typ. 135 eV FWHM
polysilicon technology 1-stage Peltier cooler @ MnK, -20°C, 300 kcps
pnWindow Planar Thin Window typ. 55 eV FWHM
(PTW-TP) @ C_K, -20°C, 10 kcps
P/B typ. 5,000 @ MnK
SDD
plus-30-128pnW UTW SL
SDDplus FET round housing typ. 127 eV FWHM
30.0 mm2 x 450 μm outer diameter 15 mm @ MnK, -30°C, 10 - 100 kcps round shape design Ø 5.8 mm Zr collimator typ. 55 eV FWHM
polysilicon technology 2-stage Peltier cooler @ C_K, -30°C, 10 kcps
pnWindow thin polymere window P/B typ. 7,500 @ MnK
non-magnetic housing
SDD
plus-60-128pnW UTW SL
SDDplus FET round housing typ. 128 eV FWHM
60.0 mm2 x 450 μm outer diameter 17.5 mm @ MnK, -30°C, 10 - 100 kcps round shape design Ø 8.15 mm Zr collimator typ. 58 eV FWHM
polysilicon technology 2-stage Peltier cooler @ C_K, -30°C, 10 kcps
pnWindow thin polymere window P/B typ. 10,000 @ MnK
non-magnetic housing
SDD
plus-100-128pnW UTW USL
SDDplus FET round housing typ. 129 eV FWHM
100.0 mm2 x 450 μm outer diameter 18.5 mm @ MnK, -30°C, 10 - 100 kcps round shape design Ø 10.5 mm Zr collimator typ. 62 eV FWHM
polysilicon technology 2-stage Peltier cooler @ C_K, -30°C, 10 kcps
pnWindow thin polymere window P/B typ. 10,000 @ MnK
non-magnetic housing
High resolution plus
SD3
plus-10-125pnW UTW SL
SDDplus FET round housing typ. 122 eV FWHM
10.0 mm2 x 450 μm outer diameter 15 mm @ MnK, -30°C, 10 - 100 kcps droplet design Ø 3.1 mm Zr collimator typ. 127 eV FWHM
polysilicon technology 2-stage Peltier cooler @ MnK, -30°C, 300 kcps
pnWindow thin polymere window typ. 42 eV FWHM
non-magnetic housing @ C_K, -30°C, 10 kcps
P/B typ. 15,000 @ MnK
SD3
plus-30-125pnW UTW SL
SDDplus FET round housing typ. 124 eV FWHM
30.0 mm2 x 450 μm outer diameter 15 mm @ MnK, -30°C, 10 - 100 kcps droplet design Ø 5.8 mm Zr collimator typ. 128 eV FWHM
polysilicon technology 2-stage Peltier cooler @ MnK, -30°C, 300 kcps
pnWindow thin polymere window typ. 45 eV FWHM
non-magnetic housing @ C_K, -30°C, 10 kcps
P/B typ. 15,000 @ MnK
Next generation – SDD
plus
Series
High-resolution, high-throughput EDX applications re-quire de tec tors with extremely low input capacitance, providing optimum detector performance at very short processing times.
Here, significant progress has been made by remodeling the geometry of the anode and of the integrated FET with the goal of reducing all parasitic capacitances related to the detector anode. This led to a new generation of SDD detectors – the so-called SDDplus Series.
The low capacitance anode/FET can be adopted to all SDD types (round or droplet shape) and sizes (from 10 and 30 mm2 up to 100 mm2 or multichannel devices).
The SDDplus detectors possess the best spectroscopic per-formance at short shaping times and are suited for all types of applications where ultimate energy resolution is required and where high spectral resolution at high speed is mandatory.
As the size of the FET and of the collecting anode is optimized with respect to minimum input capacitance, the SDDplus devices show improved spectroscopic performance for all detector areas. When applied to the SD3 droplet devices, the optimized FET technology leads to spectroscopic performance at the theoretical Fano limit.
This is especially beneficial at shorter shaping times (122 eV @ 1µs and 126 eV @ 0.25 µs for a 10 mm2 droplet SDDplus device) and for the detection of X-rays in the light element energy range (38 eV @ C_K and B_K). Lithium K-line (54 eV) is also detected.
eee e Standard FET SDDplus FET
Sensor Description Module Design Performance Parameter
122 eV @ 1 μs
SD3 10 mm2 SD3plus 10 mm2
Shaping time [µs] Energy [eV]
Energy [eV] FWHM @ M n-K α [eV ] Number of c oun ts Number of c oun ts C-K line
Next generation – SDD
plusSeries
Robust SEM/XRF SEM/TEM SEM/XRF SEM/XRF SEM SEM/TEM
