Type V DS I D R DS(on) Package Ordering Code BUZ 90 A 600 V 4 A 2 Ω TO-220 AB C67078-S1321-A3

Semiconductor Group 1 07/96

• N channel

• Enhancement mode

• Avalanche-rated

Pin 1 Pin 2 Pin 3

G D S

Type V_DS I_D R_DS(on) Package Ordering Code

BUZ 90 A 600 V 4 A 2 Ω TO-220 AB C67078-S1321-A3

Maximum Ratings

Parameter Symbol Values Unit

Continuous drain current T_C = 30 °C

I_D

4

A

Pulsed drain current T_C = 25 °C

I_Dpuls

16

Avalanche current,limited by T_jmax I_AR 4.5

Avalanche energy,periodic limited by T_jmax E_AR 8 mJ

Avalanche energy, single pulse I_D = 4.5 A, V_DD = 50 V, R_GS = 25 Ω L = 29 mH, T_j = 25 °C

E_AS

320

Gate source voltage V_GS ± 20 V

Power dissipation T_C = 25 °C

P_tot

75

W

Operating temperature T_j -55 ... + 150 °C

Storage temperature T_stg -55 ... + 150

Thermal resistance, chip case R_thJC ≤ 1.67 K/W

Thermal resistance, chip to ambient R_thJA 75

DIN humidity category, DIN 40 040 E

IEC climatic category, DIN IEC 68-1 55 / 150 / 56

Electrical Characteristics, at T_j = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage V_GS = 0 V, I_D = 0.25 mA, T_j = 25 °C

V_(BR)DSS

600 - -

V

Gate threshold voltage V_GS=V_DS, I_D = 1 mA

V_GS(th)

2.1 3 4

Zero gate voltage drain current V_DS = 600 V, V_GS = 0 V, T_j = 25 °C V_DS = 600 V, V_GS = 0 V, T_j = 125 °C

I_DSS

- -

10 0.1

100 1

µA

Gate-source leakage current V_GS = 20 V, V_DS = 0 V

I_GSS

- 10 100

nA

Drain-Source on-resistance V_GS = 10 V, I_D = 2.8 A

R_DS(on)

- 1.7 2

Ω

Semiconductor Group 3 07/96

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics Transconductance

V_DS≥ 2 _* ID * RDS(on)max, I_D = 2.8 A

g_fs

2.5 3.8 -

S

Input capacitance

V_GS = 0 V, V_DS = 25 V, f = 1 MHz

C_iss

- 780 1050

pF

Output capacitance

V_GS = 0 V, V_DS = 25 V, f = 1 MHz

C_oss

- 110 170

Reverse transfer capacitance V_GS = 0 V, V_DS = 25 V, f = 1 MHz

C_rss

- 40 70

Turn-on delay time

V_DD = 30 V, V_GS = 10 V, I_D = 2.6 A R_GS = 50 Ω

t_d(on)

- 20 30

ns

Rise time

V_DD = 30 V, V_GS = 10 V, I_D = 2.6 A R_GS = 50 Ω

t_r

- 50 75

Turn-off delay time

V_DD = 30 V, V_GS = 10 V, I_D = 2.6 A R_GS = 50 Ω

t_d(off)

- 120 150

Fall time

V_DD = 30 V, V_GS = 10 V, I_D = 2.6 A R_GS = 50 Ω

t_f

- 70 90

Electrical Characteristics, at T_j = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current T_C = 25 °C

I_S

- - 4

A

Inverse diode direct current,pulsed T_C = 25 °C

I_SM

- - 16

Inverse diode forward voltage V_GS = 0 V, I_F = 8 A

V_SD

- 1.1 1.2

V

Reverse recovery time

V_R = 100 V, I_F=l_S, di_F/dt = 100 A/µs

t_rr

- 350 -

ns

Reverse recovery charge

V_R = 100 V, I_F=l_S, di_F/dt = 100 A/µs

Q_rr

- 3 -

µC

5 07/96

Semiconductor Group

I_D ƒ(T_C

parameter: V_GS ≥ 10 V

0 20 40 60 80 100 120 °C 160

T_C 0.0

0.5 1.0 1.5 2.0 2.5 3.0 3.5 A 4.5

ID

P_tot = ƒ(T_C)

0 20 40 60 80 100 120 °C 160

T_C 0

10 20 30 40 50 60 W 80

Ptot

Safe operating area I_D = ƒ(V_DS)

parameter: D = 0.01, T_C = 25°C

10 -1 10 0 10 1 10 2

A ID

10 ⁰ 10 ¹ 10 ² V 10 ³ V_DS

R ^DS(on) = V ^DS

/ I D

DC 10 ms 1 ms 100 µs

tp = 18.0µs

Transient thermal impedance Z_{th JC} = ƒ(t_p)

parameter: D = t_p / T

10 -3 10 -2 10 -1 10 0 10 1

K/W

ZthJC

10 ^-7 10 ^-6 10 ^-5 10 ^-4 10 ^-3 10 ^-2 10 ^-1 s 10 ⁰ t_p

single pulse

0.01 0.02 0.05 0.10 0.20 D = 0.50

Typ. output characteristics I_D = ƒ(V_DS)

parameter: t_p = 80 µs

0 5 10 15 20 25 30 35 40 V 50

V_DS 0

1 2 3 4 5 6 7 A 9

ID

VGS [V]

a

a 4.0

b

b 4.5

c

c 5.0

d

d 5.5

e

e 6.0

f

f 6.5

g

g 7.0

h

h 7.5

i

i 8.0

j

j 9.0

k

k 10.0 l

Ptot = 75W

l 20.0

Typ. drain-source on-resistance R_{DS (on)} = ƒ(I_D)

parameter: V_GS

0.0 1.0 2.0 3.0 4.0 5.0 6.0 A 8.0

I_D 0.0

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5

Ω

6.5

RDS (on)

V_GS [V] = a 4.0 V_GS [V] =

a

a 4.5

b

b 5.0

c

c 5.5

d

d 6.0

e

e 6.5

f

f 7.0

g

g 7.5

h

h 8.0

i

i 9.0

j

j 10.0 k

k 20.0

Typ. transfer characteristics I_D = f (V_GS) parameter: t_p = 80 µs

V_DS≥2 x I_D x R_DS(on)max

0 1 2 3 4 5 6 7 8 V 10

V_GS 0.0

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 A 6.0

I_D

Typ. forward transconductance g_fs = f (I_D) parameter: t_p = 80 µs,

V_DS≥2 x I_D x R_DS(on)max

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 A 5.0 I_D 0.0

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 S 5.0

g_fs

7 07/96

Semiconductor Group

V_{GS (th)} ƒ(T_j

parameter: V_GS = V_DS, I_D = 1 mA

0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 V 4.6

VGS(th)

-60 -20 20 60 100 °C 160

T_j 2%

typ 98%

R_{DS (on)} = ƒ(T_j)

parameter: I_D = 2.8 A, V_GS = 10 V

-60 -20 20 60 100 °C 160

T_j 0.0

1.0 2.0 3.0 4.0 5.0 6.0

Ω

8.0

RDS (on)

typ 98%

Typ. capacitances C = f (V_DS)

parameter:V_GS = 0V, f = 1MHz

0 5 10 15 20 25 30 V 40

V_DS 10 -2

10 -1 10 0 10 1

nF C

C_rss C_oss C_iss

Forward characteristics of reverse diode I_F = ƒ(V_SD)

parameter: T_j, t_p = 80 µs

10 -1 10 0 10 1 10 2

A IF

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0

V_SD T_j = 25 °C typ

T_j = 25 °C (98%) T_j = 150 °C typ

T_j = 150 °C (98%)

Avalanche energy E_AS = ƒ(T_j) parameter: I_D = 4.5 A, V_DD = 50 V R_GS = 25 Ω, L = 29 mH

20 40 60 80 100 120 °C 160

T_j 0

40 80 120 160 200 240 280 mJ 340

EAS

Typ. gate charge V_GS = ƒ(Q_Gate)

parameter: I_{D puls} = 7 A

0 10 20 30 40 nC 60

Q_Gate 0

2 4 6 8 10 12 V 16

VGS

DS max 0,8 V

DS max 0,2 V

Drain-source breakdown voltage V_(BR)DSS = ƒ(T_j)

-60 -20 20 60 100 °C 160

T_j 540

560 580 600 620 640 660 680 V 710

V(BR)DSS

Semiconductor Group 9 07/96 Package Outlines

TO-220 AB Dimension in mm

Datasheets for electronics components.