1 to 300 K
Linear thermal expansivity (1–300 K), specific heat (1–108 K), and electrical resistivity of the icosahedral quasicrystal i Al61 4Cu25 4Fe13 2
... 共 non-Debye behavior 兲 effects below 4 K which are inconsis- tent with the much higher energy dispersion effects from inelastic neutron-scattering results. 42 The neutron-scattering data are for major symmetry ...
13
Analysis and Application of European Genetic Substructure Using 300 K SNP Information
... determined using the EIGENSTRAT statistical package [11]. Several tests were used to assess the significance of PCA. As suggested previously [7], both analysis of variance (ANOVA) and a split half reliability test ...
12
Thermal conductivity in porous silicon nanowire arrays
... Silicon with a high density of nanoscale features such as interfaces, porosity, and impurities can have thermal conductivities (κ) up to three orders of magnitude lower than that of bulk Si through enhanced phonon ...
5
Structures of K0 05Na0 95NbO3 (50–300 K) and K0 30Na0 70NbO3 (100–200 K)
... which contains the environmentally harmful element lead (Pb). The original phase diagram of KNN at room tempera- ture and above was reported by Ahtee & Glazer (1976). In the phase diagram, three phase boundaries at ...
10
The Linear Thermal Expansion of Bulk Nanocrystalline Ingot Iron from Liquid Nitrogen to 300 K
... were between 1.2 and 12.7 for NC Ni–P alloy with dif- ferent grain sizes [11], and 2.5–5.0 for other NC materials [15, 25]. According to Fig. 2, the thermal expansion of BNII mainly come from the contribution of ...
7
Dielectric Properties and the Phase Transition of Pure and Cerium Doped Calcium Barium Niobate
... ≤ 1 MHz in the temperature range 300 K ≤ T ≤ 650 K and compared with the results for the well known ferro- electric relaxor strontium-barium-niobate ...
5
Electrical Conductivity, TEP and Mobility of (CdSe)1-x (ZnS)x Mixed Semiconductors
... (CdSe) 1-x (ZnS) x are found to be negative, indicating n-type conduction in temperature region 77 - 300° K and also show that the temperature dependence of TEP in the lower and higher temperature ...
8
An enhanced MOSFET threshold voltage model for the 6–300 K temperature range
... The demand for deploying MOS circuits in extreme envi- ronments has recently increased with the inevitability of low temperature applications such as space exploration and quan- tum computing [1]. Devices ...
5
Observation of liquid–liquid phase transitions in ethane at 300 K
... MPa 300 K has been assigned to phase IV using X-ray di ff raction 16 and to phase II, followed by a phase transition at 3300 MPa to phase III using Raman ...at 300 K (see Supporting ...
8
Detecting Spatially Localized Exciton in Self Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency
... Spectroscopic ellipsometry (SE) was performed at room temperature between 1 and 6 eV, using a J.A. Woollam variable angle spectroscopic ellipsometer (VASE) M-2000. The SE measurements were performed at angles of ...
10
Tilt engineering of spontaneous polarization and magnetization above 300 K in a bulk layered perovskite
... The objective of this study is to combine both polarization and magnetization at room temperature (RT) in a bulk n = 2 RP oxide through control of composition to generate the required octahedral tilts in a system with a ...
13
Development of the Thermal Neutron Scattering Cross Sections of Graphitic Systems using Classical Molecular Dynamics Simulations.
... The effect of cascade buildup on the graphite model was studied by launching PKAs into the MD supercell, thereby causing collision cascades that leave residual defects in their wake. As the buildup is increased, the ...
197
Ultrafast dissolution and creation of bonds in IrTe₂ induced by photodoping
... obtained at 300 K (HT phase) and ~200 K (LT phase). The Miller indices (h k l) are also shown. Magnified view of the diffraction intensity (I) near the bright BP (see the white box in the ...
8
Observation of liquid–liquid phase transitions in ethane at 300 K
... to be stable. The metastable phase II is omitted for clarity. The approximate pressure of the Frenkel line transition (horizontal black line at ca. 250 MPa) and the second liquid – liquid transition (horizontal black ...
30
Proposal and Verification of Simultaneous Measurement Method for Three Thermoelectric Properties with Film Type Thermocouple Probe
... 100 K shows good results with an error of 10%, however, at 100 - 350 K, the error is maximum as ...at 300 - 673 K, electrical resistivity could not be di- rectly calculated from the measured ...
11
Chiral assemblies of nickel lysinate via the corrosive adsorption of (S) lysine on Ni/Au{111}
... 2| 1 2 N islands at 300 K and a more dense ar- rangement b 6 − 2| 2 4 N at 350 ...at 300 K presumably due to the high mobility of the complexes at this tem- ...
6
Thermal Properties and Phonon Dispersion of Bi2Te3 and CsBi4Te6 from First Principles Calculations
... that the thermal expansion increases considerably with increasing temperatures in the low temperature region be- low 170 K. In this region the two compounds have almost equivalent thermal expansion, which is in ...
8
Temperature dependent polariton emission from strongly coupled organic semiconductor microcavities
... Results and discussion. Fig. 1a shows the absorbance and PL of J-aggregates of dye F1 measured at 300 K. The J-aggregates absorb and emit at around 590 nm (2.1 eV). Both absorbance and PL spectra have ...
7
Tensile Properties of Mg 8Al xRE Alloys from 300 K to 673 K
... die-casting. 1) However, magnesium workpieces manufactured by casting, specifically for use as thin wall alloy components of 3C products, are frequently produced with casting defects such as pin holes and cold ...
7
HD + ortho-/para-H2 rotational energy transfer non-reactive scattering at low astrophysical temperatures: 2 K ≲ T ≲ 300 K
... 1. Dynamical equations. The details of the quantum-mechanical approach used in the current work has been described in few previous papers. See, for example, preprint [9] and references therein. Briefly, a ...
5