a-Si:H film
Excimer Laser Annealing of Hydrogen Modulation Doped a Si Film
... the H concentration for an a-Si film on a glass substrate (sample C) with and without ELA by TOF-SIMS are shown in ...the H concentration in the region 10 nm from the interface of the a-Si film ...
5
Structure and Luminescence Properties of Eu3+ Doped Cubic Mesoporous Silica Thin Films
... Figure 4 shows the low-angle XRD patterns of the Eu 3? ions-doped mesoporous silica thin films with an Eu/Si molar ratio of 2.57% calcined at different temperatures for 4 h. As shown in Fig. 4a, all of the ...
8
Patterned Si thin film electrodes for enhancing structural stability
... patterned Si films are shown in Figures 2a and 2c, respectively. For the two Si films, energy dis- persive spectrometry [EDS] mapping images of the Si element are also given in Figures 2b and 2d, ...
5
Fabrication and Properties of Cr2O3 and La0.7Sr0.3MnO3 Thin Film Heterostructures Integrated on Si(001).
... In-plane magnetic measurements were performed with magnetic field lying in the plane of the sample whereas out-of-plane measurements were performed with magnetic field applied along the sample normal. Two types of ...
133
Flexible carbon nanotube/mono crystalline Si thin film solar cells
... 48 h to remove amorphous carbon and catalyst ...mono-crystalline Si thin films were prepared by chemical etching of n-type (100) Si wafers (4 ...etched Si thin films were rinsed in deionized ...
6
Stress Relaxation of Poly Si Film Formed by Excimer Laser Annealing
... poly- Si becomes low with increasing grain size for ...the Si dangling ...from Si–H bonds to Si–Si bonds via Si dangling bonds does not progress completely during ELA, and ...
7
Absorption Amelioration of Amorphous Si Film by Introducing Metal Silicide Nanoparticles
... Amorphous Si (a-Si) films with metal silicide are expected to enhance the absorption ability of pure a-Si ...the film ’ s composition and the annealing temperature on the film ’ s ...
6
N type doped silicon thin film on a porous Cu current collector as the negative electrode for Li ion batteries
... for Si thin ...a-Si film was deposited on a Cu sub- strate (9 mm, MTI) with different surface conditions by using a radio frequency magnetron sputtering system (Kurt ...n-doped Si target (Kurt ...
6
Nanogrids and Beehive Like Nanostructures Formed by Plasma Etching the Self Organized SiGe Islands
... beehive Si nanostructures. Briefly, prior to the growth of SiGe thin film, the surface of Si substrate was cleaned by the standard Radio Corporation of America (RCA) proce- dures ...The Si ...
8
Microstructures and the Charge Discharge Characteristics of Advanced Al Si Thin Film Materials
... In this study, radio frequency magnetron sputtering was used to prepare Al-Si film negative electrodes and the effect of pre-sputtered Al thin film on the charge-discharge capacity characteristics are discussed. The ...
6
STEM Moiré Observation of Lattice Relaxed Germanium Grown on Silicon
... between Si (111) planes and STEM scanning ...for Si area and Ge area, ...and Si area are drastically changed across the Ge/Si ...Ge film is not strained all over the ...
8
Growth and characterization of TiO2 nanotubes from sputtered Ti film on Si substrate
... deposited film thickness, indicating selective electro- chemical oxidation/dissolution of Ti by the organic ...of Si as substrate, as typically exemplified in the current semiconductor industry, T- NT-based ...
8
Impedance of nanometer thickness ferromagnetic Co40Fe40B20 films
... Ref. [5], the MDW resonance for the CoFeB film should occur at f = 78 MHz. However, we have reasons to believe that this kind of resonance does not exist in our IM spectra. First, in Figures 3 and 4, there is ...
5
Inkjet Printed Thin Film Electrodes for Lithium-Ion Batteries
... A field emission SEM (Hitachi S-4800) equipped with an EDX spectrometer was used to observe the microstructure and elemental composition of the printed films. Compositional information was also obtained by XRD (Bruker D8 ...
109
Laser Molecular Beam Epitaxial Growth and Properties of III-Nitride Thin Film Heterostructures on Silicon
... the Si(111)-(7×7) requires high temperatures of about 850°C for thermal ...the Si(111)-(7×7) surface can maintain this reconstruction up to ~880 ºC (Olshanetsky and Mashanov, 1981; Mönch, 1979), which ...
206
Annealing effect and photovoltaic properties of nano ZnS/textured p Si heterojunction
... Recently, 2D nanostructure P-N junctions have attracted a great deal of attention for their potential applications in photovoltaic device [1]. Zinc sulfide (ZnS) was one of the first semiconductors discovered [2] and is ...
6
Crystallization of polycrystalline silicon thin film by excimer laser annealing
... ELA technique is widely used to increase the grain size (Gall, et al., 2002) and the microstructure of poly-Si thin film which is the most important characteristics of excellent built-in poly-Si ...
27
Tunable antireflection from conformal Al doped ZnO films on nanofaceted Si templates
... for Si templates can be understood in light of gradient refractive index effect arising from a continuous change in the effective refractive index along the depth (from the apex towards the base of the facets) and ...
7
Effect of Thickness on Boron-Doped Silicon Thin Film Deposited onto Silver-Aluminium Back Contact-Coated Plastic Substrate by Screen Printing
... (eV); and n is either1/2 or 2, depending on transition type. n is equal to 1/2 if the transition is direct and allowed; it is equal to 2 if the transition is indirect and allowed. The region where absorption is saturated ...
13
Application of Conductive Thin Films and Selectively Patterned Metal Oxide Coatings on Fibers by Atomic Layer Deposition.
... Figure 4.8(a) shows photographs: (i) prior to; and (ii) after coating with 400 ZnO ALD cycles, where the sample was cut to reveal the vertical penetration pattern. Figure 4.8(b) also shows: (i) a schematic sample cross ...
300