Back Surface Fields and Tunnel Junctions
Tunnelling effects in multiferroic tunnel junctions
... in tunnel junction configurations, devices which are formed from metallic electrodes separated by a very thin insulating ...in junctions containing d orbital elements are not completely understood and need ...
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CiteSeerX — Transport in Graphene Tunnel Junctions
... and back gate with graphene, and the intercept of the peak at zero back gate voltage is the Dirac point underneath the ...the tunnel probe and the back gate is obtained by locating the maximum ...
22
Ferroelectric tunnel junctions with graphene electrodes
... the surface of a ferroelectric film is difficult due to the presence of dynamic surface adsorbates, such as water molecules, which means that the ML should be stabilized with a top ...
9
Low Frequency Noise in Graphene Tunnel Junctions
... Electric measurements. Devices with features of tunnelling current, and the tunnelling distance obtained from the Simmons fit on the order of 1 A 2 nm were used for further measurements. Devices were measured in a ...
33
Canted magnetization texture in ferromagnetic tunnel junctions
... transparent tunnel junction caused by ferromag- netic coupling of magnetic moments on opposite sides of the ...A tunnel junction with t ⬘ ⬍ t 0 can be viewed as an atomi- cally sharp magnetic domain wall, ...
5
Polarization curling and flux closures in multiferroic tunnel junctions
... We expect both the electrodes and their interfaces with the ferroelectric to play a critical role in formation of the domain structure. An electrode’s ability to screen the depolarization field produced by bound charges ...
8
Immunity of nanoscale magnetic tunnel junctions to ionizing radiation
... cm 2 s 1 . Following the reactor irradiation, the MTJ samples were removed from the reactor core and placed in a shielded lead cave to allow the radioactive isotopes generated in the samples to decay. After a ...
10
Spin-Torque Effects In Mgo-Based Magnetic Tunnel Junctions
... The MPD plots show that the high voltage microwave emission behavior depends strongly on the magnetic alignment of the electrodes(direction of H e f f ) and hence on the polarity of the pulse bias. For H e f f = +145Oe, ...
170
Exchange biased magnetic tunnel junctions with antiferromagnetic epsilon Mn3Ga
... magnetic tunnel junctions with MgO barriers, which show up to 150% tunneling magnetoresistance at room ...bias fields as high as 150 mT can be achieved for samples field-cooled from 100 ...
5
Spin-transfer torques in MgO-based magnetic tunnel junctions
... ing an additional hard axis external magnetic field [51] leading to significant reductions of the switching current amplitude. In real applications, this could be implemented by an exchange bias field along the magnetic ...
146
MOCVD Growth and Modeling of Quantum-well Solar Cells and Tunnel Junctions.
... The surface recombination velocity at the BSF and window were parameterized to give the best fit to the thin barrier devices; the same value was used in the EQE calculation for the thick barrier devices for each ...
142
Resonant tunnelling in Dy or Gd doped Al2O3 magnetic tunnel junctions
... switching fields are determined by the electrodes only and hence are the same in both junctions, ...control junctions is 2.0 eV (with barrier width 1.6 nm) and the junctions doped with a ...
7
Study of Two One Dimensional Multi Tunnel Junctions Arrays Structures by SIMON
... Multi Tunnel Junctions (MTJs) have attracted much attention recently in the fields of Single-Electron Transistor (SET) and Single-Electron Memory ...
5
DESIGN AND ANALYSIS OF HIGH EFFICIENCY MULTI-JUNCTION SOLAR CELLS WITH TUNNEL JUNCTIONS
... to tunnel through the junction regardless of the barrier ...the tunnel junction is schematically shown in the ...reduce surface combination, and a p-type back-surface field layer,to ...
5
Chemical and structural analysis on magnetic tunnel junctions using a decelerated scanning electron beam
... very surface sensitive so is not suited for these kind of studies without intensive sample preparation similar to ...magnetic tunnel junctions (MTJs) to reveal the origin of the reduction in ...
20
Nonvolatile Multilevel States in Multiferroic Tunnel Junctions
... multiferroic tunnel junctions have been fabricated, and the transport of spin polarized charge carriers through the MFTJ via tunneling have been successfully modulated using the electric-field controllable ...
17
Computational design of usual magnetic tunnel junctions
... Fe|MgO|Fe tunnel junction has revolutionized the hard-disk industries, yet despite its success it remains the only commercially viable tunnel ...a tunnel junction could make the next revolutionary ...
206
MgO based magnetic tunnel junctions and their applications
... agnetic tunnel ju n ction s 4.3 MgO-based double magnetic tunnel junctions with thin middle CoFeB layer The m iddle CoFeB thickness, tmiddie, has been varied from 3 nm to Inm and ...electrons ...
156
Spin dependent transport in multifunctional tunnel junctions
... The niaiii focus of this work is to examine the spin-dependent transport behaviour of multifunctional devices using the DFT-NEGF formalism. We consider in particular the so-called nmlt[r] ...
217
Modeling and Implementation of HfO2-based Ferroelectric Tunnel Junctions
... Acknowledgments The author would like to thank Dr. Santosh Kurinec for being consistently helpful, encouraging, and supportive throughout the completion of this work. Her helpful advice and fruitful discussions of ...
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