dark I-V characteristics
Hybrid polymer/ZnO solar cells sensitized by PbS quantum dots
... [I- V ] characteristics of the devices were measured using a Keithley 2400 SourceMeter (Keithley Instruments ...under dark or one sun illumination ...
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Simulation and Characterization of PIN Photodiode for Photonic Applications
... as I-V characteristics (dark current), and internal/external quantum efficiencies were analysed to evaluate the designed and processed device structure for its potential applications in ...
13
Zener Phenomena in InGaAs/InAlAs/InP Avalanche Photodiodes
... Basic device characteristics like band diagram, dark and photo current I-V characteristic, gain, breakdown voltage, multiplication noise and gain-bandwidth product were evaluated. The [r] ...
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ABSTRACT : Thin films of undoped and doped CdTe with thickness around 500±10nm were deposited by thermal
... The I-V characteristics at the forward and reverse-bias voltage in dark and under illumination from the CdTe side, with various light intensity (20, 60 and 100 mW/cm 2 ) for undoped and doped ...
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Matlab Based Static I-V Characteristics of Optically Controlled Gaas Mesfet’s
... static I-V characteristics of GaAs MESFET’s under optically controlled conditions in both linear and saturation region is presented in this ...on I-V characteristics is explained ...
19
Structural, Morphological, Photo-Properties of Hetrojunction ZnO Nanostructure Films Deposited on n-Si(100)by PLD
... reverse I-V characteristics in dark of these heterojunctions show an exponential behavior. Upon illumination of the junction, more carriers are generated and forward and reverse current ...
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VIRTUAL INSTRUMENT SOFTWARE FOR PLOTTING V-I CHARACTERISTICS OF SILICON DETECTOR USING 6487PICOAMMETER
... In this program output comes in two forms, one as a graph display and another as a data saved in a notepad file. For displaying output as a graph subVI I-allStrip- pA@V12.vi is used. I-allStrip-Pane VI will ...
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An Analytic Model for Kink Effect in I-V Characteristics of Single Electron Transistors
... device I-V characteristics, depend on the transistor asymmetry and its biasing conditions, we have performed our simulations for all five cases, explained in Section ...of V TH and V K ...
10
I - Vt and C – V Characteristics of n - GaN – Metal Contact Devices
... Ohmic contacts to GaN have been made by evaporating Al to GaN.The current-voltage characteristics of the system Al-GaN-Al is shown in Figure 3 .The ohmic nature of the contact is clear from the linearity of the ...
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Motif of Infidelity in V. Nabokov’s Laughter in the Dark
... To summarize the abovementioned, infidelity motif has a crucial role in the novel. It is a main element, organizing whole work and motivating characters’ conduct, which influences later Nabokov’s novels (e.g. Lolita: ...
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Junction investigation of graphene/silicon Schottky diodes
... The typical dark current–voltage characteristic of G/n- Si heterojunction device is displayed in the top inset of Figure 4. The G/n-Si heterojunctions are highly rectifying with an ‘on/off’ current ratio of 10 to ...
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Effects of Varying Arc Angles and Poles Numbers on Force Characteristics of Switched Reluctance (SR) Actuator
... Similarly, in this section the effect of arc angles to the force characteristics are evaluated for the S:R=12:8 poles ratio, with 0.2mm air gap thickness. Based on Figure 13, at the maximum excitation current (2 ...
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Static and Dynamic Characterization of High Speed Silicon Carbide (SiC) Power Transistors
... 10 V. The dy- namic characteristics shows that the switching features of the SiC power devices can be very fast but at high fre- quencies the controlling external circuit must have high switching speed ...
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Temperature changes of I V characteristics of photovoltaic cells as a consequence of the Fermi energy level shift
... barrier V D decreases and the Fermi levels in the P-type and N-type regions sepa- ...voltage V P , denoted in the ...approximately V P ≈ 0.6 V in the silicon PV Fig. 4. Typical ...
6
Synthesis, Characterization and Visible Light/NIR Photodetector of CuO Nanowires Fabrication
... NWs photodetector device was fabricated and this device exhibits a reasonable sensitivity. I-V curves under dark and light response were investigated. Upon visible light illumination, the detector ...
12
Optimum Performance of Carbon Nanotube Field Effect Transistor
... [11] S. Oh, Member, IEEE, and H.-S. Philip Wong, "Physics-Based Compact Model for III–V Digital Logic FETs Including Gate Tunneling Leakage and Parasitic Capacitance", IEEE Transactions On Electron ...
5
Electrical Characterization of P-Type 4h- Silicon Carbide Metal Contacts
... electrical characteristics of the I-V and C-V for the device were measured as function of temperature, useful information related to the nature of the devices have been obtained, ...
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An Incremental Conductance based Maximum Power Point Tracking for a PV Array Operating under Nonuniform Irradiance
... Simple and inexpensive analog circuits can be used to implement RCC. Experiments were performed to show that RCC accurately and quickly tracks the MPP, even under varying irradiance levels. The time taken to converge to ...
9
C0M D I V I S I
... Placing: Lift handset + Line key + Dial number Answering: handset connected, press flashing key) Answering ringing over handset + + Dial l 0.. Placing:.[r] ...
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Mathematical Modelling of Threshold Voltage based Resistive Memory
... asymmetric characteristics between turn on and turn off, on the other hand, turning off a memristor is significantly slower when compared with turn on operation ...
6