dielectric interface
Detection of Malignant Tissue using Metal Dielectric Interface Based Plasmonic Biosensor
... Metal-dielectric interface based Plasmonic biosensors commonly known as Surface Plasmonic Resonance (SPR) used in numerous applications in the analysis of bio reagents interaction and detection of the ...
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Effect of Nanowire dielectric Interface on the Hysteresis of Solution Processed Silicon Nanowire FETs
... The trapping at the nanowire/dielectric interface plays a crucial role in the transport of charge carriers. The direct one-to-one comparison of the effect of NW-dielectric interfaces on device ...
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Surface plasmon on topological insulator/dielectric interface enhanced ZnO ultraviolet photoluminescence
... localized at the interface between vacuum and a doped TI with bulk carrier density were also theoretically predicted. 15 Therefore, it would be very interesting to experimentally study the surface plasmons on the ...
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GaN-dielectric interface formation for gate dielectrics and passivation layers using remote plasma processing
... total interface defect density, and they already reported low oxide fixed charge (and/or interface state density) in the range of 1 x 10 11 cm -2 or ...of interface trap densities are based on the ...
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Effects of Self Energy of the Ions on the Double Layer Structure and Properties at the Dielectric Interface
... assuming the absence of ions in the gas phase and considering the image charge repulsion as the dominant effect, Onsager and Samaras obtained the limiting law for the excess liquid-gas surface tension in the form ∆γ ∼ c ...
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Analysis of the Gaussian Beam on a Corrugated Dielectric Interface
... planar interface, this field will split into two ones: the first is the refracted field that propagates in the rare medium near to the interface as ...
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The Field of an Electric Dipole and the Polarizability of a Conducting Object Embedded in the Interface Between Dielectric Materials
... In this paper we present a detailed study of the problem of a static electric dipole placed in the interface between two media. The purpose of this study is to find a suitable unambiguous definition for the dipole ...
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Dielectrics and Interface Engineering for Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors.
... Transmission electron microscopy (TEM) analysis is performed to study the SiC/dielectric interface properties. Cross-sectional TEM specimens were lifted out from the channel area of fabricated lateral ...
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Husimi functions at dielectric interfaces: Inside outside duality for optical systems and beyond
... a dielectric interface) in the reduced phase space at the boundary of an open system can be constructed rigorously by the same projection procedure when the appropriate boundary conditions are employed ...
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A Simple Numerical Solution Method for TM Scattering by Conducting Cylinders Partially Buried in a Dielectric Half-Space
... a dielectric half- space has been studied extensively due to the applications in geophysical explorations, remote sensing, near field optics, ...a dielectric half-space or straddling several layers in a ...
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Interface Engineering to Control Charge Transport in Colloidal Semiconductor Nanowires and Nanocrystals
... the dielectric interface, we are able to reduce the hysteresis and make low-voltage, low-hysteresis PbSe NW FETs on flexible plastic, showing the promise of colloidal nanostructures in large area flexible ...
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Design study and Modeling of Surface Plasmon Resonance (SPR)-based Optical Fiber Sensor Utilizing Zinc Oxide and Gold Layers
... and dielectric function (Ԑm) and an outermost absorbing medium of dielectric function ...metal-dielectric interface, the evanescent waves excite the surface plasmons on the metal surface and ...
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Fabrication and Evaluation of Devices Containing High K Gate Dielectrics and Metal Gate Electrodes for the 70 and 50NM Technology Nodes of ITRS
... and (d) is expensive. Other elemental metals with high work function values such as Au are also not practical, for the same reasons as for Pt. Lu et al. investigated Mo metal gate with high-k gate dielectrics [42]. They ...
155
Parametric excitation of surface electron cyclotron X- and O- modes by alternating electric fields
... plasma- dielectric interface, when an external constant magnetic field is parallel to the plasma boundary and penetration depth of the modes is approximately equal to their ...plasma interface) ...
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Behavior of Electromagnetic Waves at Dielectric Fractal-Fractal Interface in Fractional Spaces
... at dielectric-fractal interface [20], which gives basis to analyze the behavior of these waves for multiple interfaces filled with fractal ...at dielectric interface of two fractal ...
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Analysis of the Field Focused by Hyperbolic Lens Embedded in Chiral Medium
... the dielectric medium through a chiral dielectric interface will become a single ...a dielectric when enters chiral medium through dielectric chiral interface, is divided into ...
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Interface formation and thermal stability of advanced metal gate and ultrathin gate dielectric layers
... advanced dielectric and gate materials at elevated ...metal/ dielectric interface must be able to withstand rapid thermal annealing ~ RTA ! temperatures of at least 800–1000 °C which are required to ...
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Interfacial strain-induced self-organization in semiconductor dielectric gate stacks. I. Strain relief at the Si-SiO2 interface
... the interface formation process de- termines the precursor arrangements for the interfacial layer that forms after the 900 °C ...plasma interface formation process that generates ⬃ ...to interface ...
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An important step in microwave processing of materials: permittivity measurements of thermoplastic composites at elevated temperatures
... The dielectric constant, ε′, dielectric loss, ε″, and loss tangent, tan δ, of some commonly used thermoplastics have been measured 1,2,3 at various temperatures and ...
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Interface electronic structure of Ta2O5-Al2O3 alloys for Si- field-effect transistor gate dielectric applications
... gate dielectric material with a dielectric constant higher than SiO 2 that can be used to avoid difficulties with ultrathin ( ⬍ 20 Å) SiO 2 gate dielectrics, such as high leakage current and ...high-quality ...
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