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DOPED GERMANIUM

Weak localization and weak antilocalization in doped germanium epilayers

Weak localization and weak antilocalization in doped germanium epilayers

... of doped germanium is measured at a range of temperatures down to ...highly doped n-type device, presenting possible applications in quantum ...

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Thermoluminescence study of aluminium oxide doped germanium prepared by combustion synthesis method

Thermoluminescence study of aluminium oxide doped germanium prepared by combustion synthesis method

... doped with impurities that induce many different types of trapping centers at which charged particles produce ionizing radiation [15]. Since then, there are a lot of efforts have been directed towards the ...

7

Electronic Structures and Band Gap of Doped Germanium Nanowires (GeNWs)

Electronic Structures and Band Gap of Doped Germanium Nanowires (GeNWs)

... The Germanium nanowire nanowires are created in the direction <100>, <110>, <111> ...nanowire Germanium nanowire is made with of help of Matlab ...

5

A nuclear magnetic resonance study of the metal nonmetal transition in arsenic doped germanium

A nuclear magnetic resonance study of the metal nonmetal transition in arsenic doped germanium

... in doped sem ico n d u cto rs invokes the p re se n c e o f n e a r ly -fr e e m o m en ts o r Kondo c en tres in ad d itio n to the itin e ra n t e le c tro n s y s te m ...

262

Simulations of silver doped germanium selenide glasses and their response to radiation

Simulations of silver doped germanium selenide glasses and their response to radiation

... Chalcogenide materials are among the most flexible and useful in current technology. Certain GeSbTe alloys are the basis of phase change memory technology [1] (now a credible alternative to conventional FLASH memory) and ...

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Luminescence properties of electron hole droplets in pure and doped germanium

Luminescence properties of electron hole droplets in pure and doped germanium

... The spectrum is qualitatively similar to that observed in the laser excitation from pure material and electrical injection in the surface p-i-n structure.. Although the features of the r[r] ...

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Theoretical Investigation of Application of Combining Pristine C60 and Doped C60 with Silicon and Germanium Atoms for Solar Cells ; A DFT Study

Theoretical Investigation of Application of Combining Pristine C60 and Doped C60 with Silicon and Germanium Atoms for Solar Cells ; A DFT Study

... its doped complexes configurations which contain 1-3 doped Silicon atoms and 1-3 doped Germanium, ...and Germanium are semiconductors chosen from forth group of the periodic table of ...

9

Silicon germanium materials for terahertz emission

Silicon germanium materials for terahertz emission

... These membranes are shown to be of high crystal quality which gives them many applications, including as a possible platform for Si-based quantum cascade laser structures.... Publication[r] ...

254

Colloidal synthesis of germanium nanocrystals

Colloidal synthesis of germanium nanocrystals

... In the first stage, a precursor solution was prepared by solving 0.26 gr germanium oxide powder in 50 ml of boiling water under vigorous agitation. Then, 33 ml of sodium hydroxide solution was added to precursor ...

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Germanosilicide Contacts to Ultra-shallow P+N Junctions of Nanoscale CMOS Integrated Circuits by Selective Deposition of In-situ Doped Silicon-Germanium Alloys

Germanosilicide Contacts to Ultra-shallow P+N Junctions of Nanoscale CMOS Integrated Circuits by Selective Deposition of In-situ Doped Silicon-Germanium Alloys

... One of the key challenges for future CMOS technology nodes is to form source/drain junctions with very small parasitic series resistance values. This requires fundamentally new junction and contact formation technologies ...

173

Selective Chemical Vapor Deposition of Heavily Boron Doped Silicon-Germanium Films from Disilane, Germane and Chlorine for Source/ Drain Junctions of Nanoscale CMOS

Selective Chemical Vapor Deposition of Heavily Boron Doped Silicon-Germanium Films from Disilane, Germane and Chlorine for Source/ Drain Junctions of Nanoscale CMOS

... heavily doped extension junctions [27,28]. If epitaxy of an undoped layer is used prior to ion implantation, epitaxial facets may pose process integration challenges. The ion implantation depth near the facet ...

168

Hafnia and alumina on sulphur passivated germanium

Hafnia and alumina on sulphur passivated germanium

... & Electronics, University of Liverpool, Liverpool, UK Abstract In this work hafnia HfO2 and alumina Al2O3 films were deposited on germanium, using either water or oxygen plasma as the ox[r] ...

5

Dosimetric properties of germanium doped calcium borate glass for use as photon dosimeter

Dosimetric properties of germanium doped calcium borate glass for use as photon dosimeter

... studied. Germanium makes the sample become glass because it can form a highly cross-linked network of chemical ...of germanium doped calcium borate glass subjected to photon irradiation are ...

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Tetra­kis­­(phenyl­ethynyl)­germanium(IV)

Tetra­kis­­(phenyl­ethynyl)­germanium(IV)

... [(III); Guo et al., 1999] were reported previously. The GeÐC distance in (I) [1.886 (3) AÊ] is close to the values previously found for (II) and (III) (average values 1.893 and 1.887 AÊ, respectively). However, these ...

6

Silicon, germanium and tin arsines.

Silicon, germanium and tin arsines.

... The formation of some silyl(dimethyl)arsine indicates that the (SiH^lgAs/LiAlH^ reaction is not specific and that some (sAl) 2AsSiH^ species are present as well as 3ll Asl S i H ^ ^ . Treatment of the disi lyl­ ...

137

Transport in silicon germanium heterostructures

Transport in silicon germanium heterostructures

... It is desirable, as explained in Chapter 2, to increase the performance of holes to match electrons at room tem- perature within a semiconductor system, and strained silicon-germanium heterostructures are ...

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Germanium as a platform for semiconductor spintronics

Germanium as a platform for semiconductor spintronics

... The thicknesses of these layers were confirmed by both cross-sectional TEM and SIMS given in figures 4.2 and 4.3. The Ge at the interface with the Si sub- strate can be seen to have a large amount of dislocations, caused ...

201

Bismuth and Germanium Nanoscale Cluster Devices

Bismuth and Germanium Nanoscale Cluster Devices

... A big thank you to all the technical staff of the physics department who always produced quality work and often were able to manufacture just what was required in a very short time. Specific thanks goes to Stephen ...

159

Diffusion of germanium in copper

Diffusion of germanium in copper

... the germanium dioxide separately was adopted since the cuprous cyanide would not always dissolve properly in the ...copper germanium alloy, and that the addition of 5 millilitres of ...

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Lead germanium oxide

Lead germanium oxide

... flexibility of the polyhedral model for germanium allows the formation of various open frameworks. In particular, germa- nium shows a great ability to form rings containing three metal atoms. Some germanates with ...

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