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dot lasers

Thermal Effects and Small Signal Modulation of 1 3 μm InAs/GaAs Self Assembled Quantum Dot Lasers

Thermal Effects and Small Signal Modulation of 1 3 μm InAs/GaAs Self Assembled Quantum Dot Lasers

... We investigate the influence of thermal effects on the high-speed performance of 1.3-μm InAs/GaAs quantum-dot lasers in a wide temperature range (5–50°C). Ridge waveguide devices with 1.1 mm cavity length ...

5

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1 3 μm Quantum Dot Lasers

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1 3 μm Quantum Dot Lasers

... quantum dot lasers have been improved with progress in active layer ...quantum dot lasers with superior device ...quantum dot system is eliminated by the method of high-temperature ...

6

Energy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes

Energy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes

... Semiconductor lasers have found many applications, and among many types of them, Quantum dot lasers have found a special place in new life due to their interesting characteristics arising from their ...

9

Nanosecond colloidal quantum dot lasers for sensing

Nanosecond colloidal quantum dot lasers for sensing

... CQD lasers, ...CQD lasers with a few nanosecond-pulse duration are made possible by utilizing a planar distributed feedback cavity that includes a high surface quality thin film made of an optimized ...DFB ...

12

Semiconductor Quantum Dot Lasers as Pulse Sources for High Bit Rate Data Transmission

Semiconductor Quantum Dot Lasers as Pulse Sources for High Bit Rate Data Transmission

... Then, all dots that have an optical gain above the lasing threshold start lasing independently, leading to broad-band lasing emission and they reach the steady state and decay independently with no influence of any group ...

15

Improved ground state modulation characteristics in 1 3 μm InAs/GaAs quantum dot lasers by rapid thermal annealing

Improved ground state modulation characteristics in 1 3 μm InAs/GaAs quantum dot lasers by rapid thermal annealing

... performance of QD lasers, it is important to delay the onset of ES lasing. It is well-documented that p -doping of the QDs can reduce the effect of gain saturation and thus maintain GS lasing up to higher ...

5

Investigation of monolithic passively mode locked quantum dot lasers with extremely low repetition frequency

Investigation of monolithic passively mode locked quantum dot lasers with extremely low repetition frequency

... A modified multisection DDE model has been developed for the simulation of two-section or three-section ultra- long monolithic QD ML lasers. The multistable dynamical regimes of a 2-cm-long monolithic passively ML ...

6

The Role of Parameter Variations in the Static and Dynamic Characteristics of Quantum Dot Lasers by Using Circuit-Level Modeling

The Role of Parameter Variations in the Static and Dynamic Characteristics of Quantum Dot Lasers by Using Circuit-Level Modeling

... (QW) lasers, in many aspects including threshold current, thermal stability, modulation bandwidth, and spectral band-width, that is similar to an impulse function due to discrete mode density ...QD lasers ...

6

Dropout dynamics in pulsed quantum dot lasers due to mode jumping

Dropout dynamics in pulsed quantum dot lasers due to mode jumping

... We examine the response of a pulse pumped quantum dot laser both experimentally and numerically. As the maximum of the pump pulse comes closer to the excited-state threshold, the output pulse shape becomes ...

6

Electrically pumped continuous-wave III–V quantum dot lasers on silicon

Electrically pumped continuous-wave III–V quantum dot lasers on silicon

... Increased data throughput between silicon processors in modern information processing demands unprecedented bandwidth and low power consumption beyond the capability of conventional copper interconnects. To meet these ...

12

CMOS Integration of High Performance Quantum Dot Lasers For Silicon Photonics

CMOS Integration of High Performance Quantum Dot Lasers For Silicon Photonics

... Mode-locked lasers generate ultrashort pulses from durations ranging from femtoseconds to tens of picoseconds with applications in optical clock generation, OTDM, WDM (Wavelength-Division-Multiplexing), and high ...

155

Electrically pumped continuous-wave III–V quantum dot lasers on silicon

Electrically pumped continuous-wave III–V quantum dot lasers on silicon

... Lasing spectra for a 50 µm × 3200 µm InAs/GaAs QD laser grown on a silicon substrate measured 5% above the threshold at various heat-sink temperatures under c.w operation are shown.. It [r] ...

8

Novel semiconductor based light sources

Novel semiconductor based light sources

... quantum dot devices and introducing my work within this research ...pulsed lasers is ...ultrashort-pulse lasers, I will forego any discussion of constant- intensity lasing ...

220

Ultrashort pulse generation from quantum dot semiconductor diode lasers

Ultrashort pulse generation from quantum dot semiconductor diode lasers

... Quantum-dot lasers were theoretically predicted to exhibit very low values of linewidth enhancement factor ...mode-locked lasers very close to threshold, and at a high reverse bias [6]; however, this ...

141

Fibre compatible modelocked lasers at 1 5μm

Fibre compatible modelocked lasers at 1 5μm

... fibre lasers (see chapter 8) has shown that highly efficient laser oscillation can be achieved for a number of different active ...fibre lasers will be greatly improved on incorporation of semiconductor ...

214

Fuzzy Dot Subalgebras and Fuzzy Dot Ideals of Distributive Implication Groupoids
Gaussian Quadrature Rule

Fuzzy Dot Subalgebras and Fuzzy Dot Ideals of Distributive Implication Groupoids Gaussian Quadrature Rule

... Notation 5.2. Let I, J ∈ [0, 1] , ⊆ and (] be the ideal of generated by . (U L M b denotes the fuzzy subset of defined by: (U L M b() = N I + ∈ ( J OPℎRST+ER. U], U for all ∈ . Lemma 5.1. Let be a nonempty subset of and ...

21

Ultrafast high repetition rate waveguide lasers

Ultrafast high repetition rate waveguide lasers

... Semiconductor lasers, in either edge-emitting [6] or surface-emitting [7] formats, mode- locked fiber lasers [8], micro-ring resonators [9], and carefully engineered bulk laser systems [10] can all offer ...

10

Lasers

Lasers

... CO2 lasers, solid gain media are present in lasers such as the Ti:sapphire laser, and lasers such as dye lasers with broad wavelength spectra use liquid gain media [7, ...

32

Design of linear and star shaped macromolecular organic semiconductors for photonic applications

Design of linear and star shaped macromolecular organic semiconductors for photonic applications

... organic lasers is the realization of electrically driven devices, and ideally, this would be accompanied by a cheap manufacturing ...organic lasers, in which the gain material is pumped by an inorganic ...

10

Frequency Noise Control of Heterogeneous Si/III V Lasers

Frequency Noise Control of Heterogeneous Si/III V Lasers

... the imaginary part of the refractive index in the QWs. Therefore, for a given material, one cannot eliminate the presence of the linewidth enhancement factor. As discussed in Section 2.2.2, quantum-dots (QDs), for ...

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