GaAs-(AlGa)As
Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer
... thin GaAs spacer to form vertically aligned QD pairs. Such bilayer InAs/GaAs QD structures not only enable tuning of the quantum coupling between InAs/GaAs QDs by adjusting the GaAs spacer ...
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Suppression of cross-hatched polariton disorder in GaAs/AlAs microcavities by strain compensation
... at T ¼ 900 C. In the sample design, we used the average of both values. The lattice constant of the ternary alloy was cal- culated using the Vegard’s law from the lattice constants of the binary alloys and thermal ...
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Low-cost high-efficiency solar cells with wafer bonding and plasmonic technologies
... unbonded GaAs and InGaAs subcells were also ...bonded GaAs/InGaAs cell. The GaAs subcell was mounted on a handling glass substrate with gold film via conductive silver- epoxy glue, for its ...
205
Nano structure fabrication of GaAs using AFM tip induced local oxidation method: different doping types and plane orientations
... the GaAs surface without any local oxidation are compared with the local oxide patterned GaAs as shown in Figure ...and GaAs is shown in Figure ...
9
Self assembly of Silver Nanoparticles and Multiwall Carbon Nanotubes on Decomposed GaAs Surfaces
... At this point, we turn our discussion to the wetting of the decomposed surface by a colloidal system consisting of 0.1% concentration of Ag nanoparticles dissolved in tolu- ene. The effect of Ag nanoparticles on the ...
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Effect of Interfacial Bonds on the Morphology of InAs QDs Grown on GaAs (311) B and (100) Substrates
... on GaAs (311) B sample was just over the transition thickness (we had measured the transition thicknesses before this ...on GaAs (100) had already developed for a certain ...on GaAs (311) B ...
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Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light Sensitive Devices
... -GaAs/substrate interface is opposite to that in the rest of the MBE-grown structure (see the Fig. 3). Hence, the excitation in the n + -GaAs layer and substrate (above 1.36 eV) gives an opposite PV signal ...
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Optical and Mechanical Characterization of InAs/GaAs Quantum Dot Solar Cells
... State of the art triple junction solar cells have achieved in excess of 43% efficiency. In order to extend this beyond a multijunction-only design, novel approaches to photon conversion must be sought and realized. Two ...
162
Energy state of InGaAs quantum dots on SiO2 patterned vicinal substrate
... (001) GaAs, both {113}A and {111}A facets include steps perpendicular to the misorientation direction for the misorientation substrates. Average distance between steps is estimated to be 3.2 nm for 5°-off (001) ...
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Performance assessment of multijunction solar cells incorporating GaInNAsSb
... Multijunction solar cells (MJSC) are instrumental in con- centrated (CPV) and space photovoltaic systems. The driving force for the material and technological develop- ment of MJSCs is the need for higher conversion ...
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Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy
... To determine the detailed structural and chemical charac- teristics of obtained nanostructures, cross-sectional TEM inves- tigations were performed. Figure 2(a) is a low-magnification cross-sectional TEM image of sample ...
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Experimental evidences of quantum confined 2D indirect excitons in single barrier GaAs/AlAs/GaAs heterostructure using photocapacitance at room temperature
... to effective quantum confinement of electrons within X-GaAs/X-AlAs/X-GaAs band configuration. However, we do not observe any red shift of excitonic photocurrent spectra with applied bias (Figs. 2(c) and ...
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Research on the Effect of High Power Microwave on Low Noise Amplifier and Limiter Based on the Injection Method
... of GaAs is the most wearing part to HPM in LNA, the damage threshold of LNA is about 40dBm under single pulse while in repetitive pulse the value is from ...
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Rolled Up Nanotech: Illumination Controlled Hydrofluoric Acid Etching of AlAs Sacrificial Layers
... The ESE was used to position and control the roll up of tubes from strained InGaAs/GaAs bilayers. The patterning allowed us to create well-defined starting edges suitable for the illumination experiment (as in ...
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Dislocation filters in GaAs on Si
... Sample R22 had no anneals ( Anneal Type 0 ) . Sample R23 experienced Anneal Type 1; following the 100 nm SPSL in the 660 ° C GaAs buffer layer, growth was paused and the sample held under an As fl ux. The anneal ...
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Mechanism of GaAs Surface Sulfidation
... GaAs surface topography was investigated using an atomic force microscope to determine the effect of electrochemical treatment on surface roughness. A MFP3D Asylum research 6310 AFM was used for this study. The ...
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Submonolayer InGaAs/GaAs quantum dot solar cells
... High-growth-temperature GaAs spacer layers were used to sup- press the formation of threading dislocations [18,19]. The surface morphology of the solar cell samples was characterised by a Veeco Nanoscope V atomic ...
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Materials integration for high-performance photovoltaics by wafer bonding
... applied to the transfer of thin films of InP 16,17 and GaAs 18 to foreign substrates. For this reason, a detailed understanding of the role of hydrogen in the exfoliation of these materials is still lacking. As ...
303
A GaAs-based self-aligned stripe distributed feedback laser
... p-doped GaAs was overgrown to in fi ll and planarize the index-coupled DFB grating, before 600 nm n-doped GaInP ( lattice-matched to GaAs ) opto-electro- nic con fi nement layer, and 20 nm of GaAs ...
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Dynamics of Optically Generated Carriers in Si (100) and Si (111) Substrate Grown GaAs/AlGaAs Core Shell Nanowires
... of GaAs core and SI-GaAs (100) substrate are shown in ...the GaAs component of CSNW sam- ples was one order of magnitude higher than that of GaAs ...posited GaAs material on both ...
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