GaAs-AlGaAs based devices
Influence of doping density on electron dynamics in GaAs/AlGaAs quantum cascade lasers
... midinfrared GaAs/ AlGaAs quantum cascade lasers is ...was based on a fully nonequilibrium self-consistent Schrödinger-Poisson analysis of the scattering rate and energy balance ...different ...
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Observation of first and third harmonic responses in two-dimensional AlGaAs/GaAs HEMT devices due to plasma wave interaction
... The simulation based on the proposed theory [3] and briefly described in Section 2, was carried out to confirm those resonant peaks. Because of the nonlinear properties of the electron fluid and the asymmetry in ...
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Design and characterization of high optical quality InGaAs/GaAs/AlGaAs-based polariton microcavities
... Microcavity polaritons are the quasi-particles arising from the strong-coupling between quantum well (QW) exci- tons and photons. Since their first observation polaritons have attracted a great deal of attention as they ...
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Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core multiple quantum well shell nanowire structure grown on Si (100) by molecular beam epitaxy
... of GaAs/GaInAs core- shell nano-needle structures was reported [21] although the study mainly focused on structural analysis, and little attention was given to studying their optical properties at room ...
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Self-consistent solutions to the intersubband rate equations in quantum cascade lasers: Analysis of a GaAs/AlxGa1-xAs device
... been based on a InGaAs/AlInAs structure so that the growth could be lattice matched to InP ...been based on a GaAs/AlGaAs structure, which is a material more commonly used in com- pound ...
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Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell
... the GaAs host ...QD based IBSCs is not favourable and the upper limit efficiency is around 20% (1 sun) and 34% (1000 ...as AlGaAs or GaP are ...of GaAs QD arrays embedded in AlGaAs ...
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2D Photonic crystal thermo optic switch based on AlGaAs/GaAs epitaxial structure
... promising platform for actively controlled devices. A Mach-Zehnder interferometer operating successfully (in a purely passive manner) with an estimated 28% overall transmission using W1 channel waveguide was ...
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Micro photoluminescence of GaAs/AlGaAs triple concentric quantum rings
... Self-assembled semiconductor quantum nanostructures are currently deeply investigated because of their poten- tiality as building block for novel quantum optical and optoelectronic devices [1-4]. Several promising ...
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Laterally pumped GaAs/AlGaAs quantum wells as sources of broadband terahertz radiation
... were considered, a digitally graded, quasiparabolic well and a simple square well, and their performance was compared. Despite the higher overall emitted power from the square well system, the emission spectrum of the ...
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Self-consistent energy balance simulations of hole dynamics in SiGe/Si THz quantum cascade structures
... of AlGaAs based QCLs requires spacing between subsequent subbands to be somewhat less than the optical phonon ...in GaAs, nonpolar optical phonon scattering is still slow when the subband spacing is ...
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Ion beam effects in GaAs-AlGaAs materials and devices
... With protons, the strong dynamic annealing in AlGaAs and the small size of the damage clusters means that increasing the irradiation temperature has very little effect on the overlap of [r] ...
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Optical Gain and Confinement in Gaas/Algaas Structure Quantum Well Lasers
... well structures with a thickness of 100Å have been widely reported [2, 3], although the use of thinner QW structures is relatively new. The importance of using QWs with polarization was shown, looking for improved ...
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Constructing Empirical Likelihood Confidence Intervals for Medical Cost Data with Censored Observations
... is based on solution to an quantum forced harmonic oscillator under the influence of radiation as well as a perturbation for the elastic scattering provided by I˜ narrea et ...
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Electron Microscopy Studies of Non Local Effects' Impact on Cathodoluminescence of Semiconductor Laser Structures
... An overflow of the laser current outside the narrow lasing region is reduced by the formation of a mesa. The thinning (etching) of the p-AlGaAs cladding on both sides of the mesa increases its resistance so that ...
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Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
... Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion length of ...
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Measurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots
... quantum dot structure. On the other hand, as we show below, the precise knowledge of the elec- tron wavefunction F (r, z) is not required for the calculations of the hyperfine shifts (based on Supplementary Eq. ...
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Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self Assembled Nanoholes
... 7 nm. In Ref. [21], this experimental filling level was explained quantitatively with a model in which the part of the GaAs flux impinging on the area of the nanohole opening migrates downwards and fills up the ...
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Hybrid architecture for shallow accumulation mode AlGaAs/GaAs heterostructures with epitaxial gates
... shallow devices, the ‘depth’ of a device being defined as the thick- ness of the AlGaAs ...nm) AlGaAs layer on a GaAs buffer to form the 2DEG inter- face, followed by 25 nm (10 nm) of undoped ...
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Design of RS and D Flip Flop using AlGaAs/GaAs MODFET Technology
... Technology scaling of a transistor feature size has provided a remarkable innovation in silicon industry for the past few decades. Designers are striving for semiconductor area, higher speed, low power consumption and ...
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Mid-infrared detection in p-GaAs/AlGaAs heterostructures with a current blocking barrier
... followed by Ti/Pt/Au metallization on the top, middle, and bottom contact layers. The areas of the top and middle mesa contacts are 400 µm × 400 µm, and 570 µm × 570 µm, respectively. Finally, top p + -GaAs ...
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