GaAs-AlGaAs quantum cascade lasers
Influence of doping density on electron dynamics in GaAs/AlGaAs quantum cascade lasers
... A detailed theoretical and experimental study of the influence of injector doping on the output characteristics and electron heating in midinfrared GaAs/ AlGaAs quantum cascade lasers ...
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Design Optimization for 4.1-THZ Quantum Cascade Lasers
... Abstract: We present an optimized design for GaAs/AlGaAs quantum cascade lasers operating at 4.1THz. This was based on a three-well active module with diagonal radiative transition. ...
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Gain optimization in optically pumped AlGaAs unipolar quantum-well lasers
... in quantum wells (QWs) by Kazarinov and Suris in 1971 [1], there has been considerable research effort in this ...unipolar lasers have been proposed, and some of them realized, the most important of which ...
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Towards automated design of quantum cascade lasers
... of GaAs/ AlGaAs quantum cascade laser ...m GaAs-based mid-infrared quantum cascade lasers and presents the output characteristics of some of the designed optimized ...
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Laterally pumped GaAs/AlGaAs quantum wells as sources of broadband terahertz radiation
... to quantum cascade lasers, may operate at room temperature, or even at 400 ...graded quantum well, it appears possible to realize limited-bandwidth inco- herent terahertz sources, the spectral ...
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A physical model of quantum cascade lasers: Application to GaAs, GaN and SiGe devices
... On the other hand, recent success in realisation of GaAs/AlGaAs THz QCLs has intensified research efforts to realize analogous devices in Si/SiGe strained-layer technology. The possibility of monolithic in- ...
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Self-consistent solutions to the intersubband rate equations in quantum cascade lasers: Analysis of a GaAs/AlxGa1-xAs device
... Quantum cascade lasers have been the focus of much research since they were developed in ...a GaAs/AlGaAs structure, which is a material more commonly used in com- pound ...operational ...
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Ultrashort electromagnetic pulse control of intersubband quantum well transitions
... semiconductor quantum wells has led to the experimental observation of sev- eral interesting and potentially useful effects, such as tunneling-induced transparency [1,2], electromagneti- cally induced transparency ...
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Thermal effects in InGaAs/AlAsSb quantum-cascade lasers
... Recently InGaAs/AlAsSb QCLs lattice matched to InP sub- strates have been reported [7]. The InGaAs/AlAsSb het- erostructure has a very large conduction band offset of ∼1.6 eV which is almost double that of the strained ...
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Observation of microwave induced resistance oscillations in a high mobility two dimensional hole gas in a strained Ge/SiGe quantum well
... More careful examination of the data in Fig. 3(a) also reveals an extra photoresistance feature which occurs close to the cyclotron resonance (cf. ↓). While the exact origin of this feature is unclear at this point, its ...
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Efficient method for transport simulations in quantum cascade lasers
... used for energies close to the lowest miniband, to demonstrate accuracy of their approach. We showed [19] differences in simulation results obtained with both superlattice models, i.e. with finite and infinite ...
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Hot-phonon generation in THz quantum cascade lasers
... Abstract. Observation of non-equilibrium optical phonons population associated with electron transport in THz quantum cascade lasers is reported. The phonon occupation number was measured by using a ...
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Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells
... in GaAs QWs, which may play an important role in narrow band materials and highly doped QWs as well as at high temperature [22]; (ii) α (or β ) should be the effective Rashba (or Dresselhaus) parameter ...
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Infinite-period density-matrix model for terahertz-frequency quantum cascade lasers
... Various models for transport in QCLs exist [12]: most commonly employing semiclassical approaches such as self- consistent rate-equation (RE) modeling, which considers non- radiative transitions of carriers due to the ...
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Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well
... intrinsic GaAs QW [22] and bulk CdTe crystal [23,24] at room ...bulk GaAs has also observed a peak in spin-dephasing times [25], and this peak has been attributed to the influence of electron screening and ...
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Droplet etching of deep nanoholes for filling with self aligned complex quantum structures
... prepared with different filling pulse numbers. If the fill- ing of the first dot is kept constant and the filling of the second dot is increasing the high-energy luminescence lines shift to lower energy. The second dot ...
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Energy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes
... Semiconductor lasers have found many applications, and among many types of them, Quantum dot lasers have found a special place in new life due to their interesting characteristics arising from their ...
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High order sideband generation in terahertz quantum cascade lasers
... teger n > 1, is often reported in experiments involving a THz beam provided by a free electron laser (FEL) and using a weak near-infrared laser (see, for example, Refs. 10 and 11). These higher order sidebands can ...
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Aspects of the internal physics of InGaAs/InAlAs quantum cascade lasers
... midinfrared quantum cascade laser 共QCL兲 designed to operate in continuous wave mode at room temperature 关Beck et ...analogous GaAs based midinfrared ...
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Discrete Vernier tuning in terahertz quantum cascade lasers using coupled cavities
... Terahertz-frequency quantum cascade lasers (THz QCLs) are compact solid-state sources of coherent radiation in the 1–5 THz region of the electromagnetic spectrum [1], with output powers in excess of ...
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