GaAs-AlGaAs quantum well
Intersubband terahertz transitions in Landau level system of cascade GaAs/AlGaAs quantum well structures in strong tilted magnetic field
... The simplest solution is to apply an electric field along the structure growth axis especially as the electric field is necessary to provide the resonant tunneling pumping of the LLs of the upper subband. In Figure 2, ...
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Anisotropic in plane spin splitting in an asymmetric (001) GaAs/AlGaAs quantum well
... We observed the anisotropic in-plane spin splitting of the conduction-band electron in an asymmetric (001) GaAs/ AlGaAs quantum well using TRKR technique with applied magnetic fields. It is ...
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Temperature and electron density dependence of spin relaxation in GaAs/AlGaAs quantum well
... for GaAs/AlGaAs quantum wells (QWs) with different structural symmetries have been studied by using time-resolved Kerr rotation ...designed GaAs QW comparing with the asymmetrical one, ...
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Ultrashort electromagnetic pulse control of intersubband quantum well transitions
... double GaAs/AlGaAs quantum well structure, taking into account the ultrashort nature of the applied field, and show that high-efficiency population inversion is possible for specific pulse ...
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Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell
... A GaAs quantum dot (QD) array embedded in a AlGaAs host material was fabricated using a strain-free approach, through combination of neutral beam etching and atomic hydrogen-assisted molecular beam ...
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Optical Gain and Confinement in Gaas/Algaas Structure Quantum Well Lasers
... the quantum well thickness in a SQW laser is small and such problem can dealt by increasing the wells’ number in order to enhance optical confinement ...multi‐quantum well structure is better ...
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Self-consistent solutions to the intersubband rate equations in quantum cascade lasers: Analysis of a GaAs/AlxGa1-xAs device
... a GaAs/AlGaAs structure, which is a material more commonly used in com- pound ...operational quantum cas- cade lasers are in the mid-infrared frequency range 8,9 but recently models have been ...
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Characterisation of temperature dependent parameters of multi quantum well (MQW) Ti/Au/n AlGaAs/n GaAs/n AlGaAs Schottky diodes
... quantum well (MQW) Schottky diodes were measured over a range of temperatures from 20 to 400 K by a step of 20 K. The Schottky diodes parameters were then extracted from these characteristics. The Cheung ...
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Room temperature spin diffusion in (110) GaAs/AlGaAs quantum wells
... Transient spin grating experiments are used to investigate the electron spin diffusion in intrinsic (110) GaAs/AlGaAs multiple quantum well at room temperature. The measured spin diffusion ...
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Measurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots
... Quantum dots formed by nanohole etching and infilling are modeled using the structure with a cross-section shown in Supplementary Fig. 5a. We assume cylindric symmetry which simplifies the problem. The aluminium ...
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Laterally pumped GaAs/AlGaAs quantum wells as sources of broadband terahertz radiation
... hertz quantum cascade lasers has made a huge impact on Terahertz ...simple quantum well, pumped by a lateral current, as a source of incoherent terahertz ...like GaAs/AlGaAs, the ...
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Influence of doping density on electron dynamics in GaAs/AlGaAs quantum cascade lasers
... In order to simulate the influence of the injector doping density on the output characteristics of QCLs, the model was extended to include the effects of the dopant position and electron distribution on the electronic ...
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Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells
... in GaAs QWs, which may play an important role in narrow band materials and highly doped QWs as well as at high temperature [22]; (ii) α (or β ) should be the effective Rashba (or Dresselhaus) parameter ...
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Gain optimization in optically pumped AlGaAs unipolar quantum-well lasers
... in quantum wells (QWs) by Kazarinov and Suris in 1971 [1], there has been considerable research effort in this ...the quantum cascade laser (QCL), demonstrated by Faist et ...the GaAs–AlGaAs ...
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Spin polarization of carriers in InGaAs self assembled quantum rings inserted in GaAs AlGaAs resonant tunneling devices
... n-type GaAs-AlGaAs resonant tunneling diodes (RTDs) containing a layer of InGaAs self-assembled quantum rings (QRs) in the quantum well ...
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Study on the Luminescence Properties of the Strain Compensated Quantum Well
... potential well material In- GaAs, and the barrier materials AlGaAs and GaAsP were respectively used to prepare the strained quantum wells and strain compensated quantum ...strained ...
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Observation of microwave induced resistance oscillations in a high mobility two dimensional hole gas in a strained Ge/SiGe quantum well
... More careful examination of the data in Fig. 3(a) also reveals an extra photoresistance feature which occurs close to the cyclotron resonance (cf. ↓). While the exact origin of this feature is unclear at this point, its ...
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Electron Microscopy Studies of Non Local Effects' Impact on Cathodoluminescence of Semiconductor Laser Structures
... Spatially and spectrally resolved cathodoluminescence (CL) studies performed in a scanning electron microscope (SEM) or a scanning transmission electron microscope (STEM) are widely applied to determine the luminescence ...
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Development of AlGaAs /GaAs/ AlGaAs Step Quantum well to produce Tunable Photo Detector and Electro Absorption Modulator for noise reduction
... Asymmetric Quantum well with AlGaAs /GaAs/ AlGaAs ...and Quantum-confined Stark effect ...a quantum well structure and a type using a bulk Semiconductor layer ...
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Measurement of the spin temperature of optically cooled nuclei and GaAs hyperfine constants in GaAs/AlGaAs quantum dots
... state quantum information technologies ...in quantum dots ...in GaAs/AlGaAs quantum dots with high accu- racy using a new approach enabled by manipula- tion of the nuclear spin states ...
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