• No results found

GaAs/Ge solar cells

Efficiency improvement of InGaP/GaAs/Ge solar cells by hydrothermal deposited ZnO nanotube structure

Efficiency improvement of InGaP/GaAs/Ge solar cells by hydrothermal deposited ZnO nanotube structure

... Figure 2b shows the energy dispersive spectrometer (EDS) image of a ZnO nanotube. It shows clearly the Zn and O elements on the cell. In a solar cell, the high per- formance of antireflection coating (AR coating) ...

5

Performance assessment of multijunction solar cells incorporating GaInNAsSb

Performance assessment of multijunction solar cells incorporating GaInNAsSb

... We have presented our GaInNAsSb diode characteristics with different N and Sb compositions and estimated the efficiency of GaInP/GaAs/GaInNAsSb and GaInP/GaAs/ GaInNAsSb/Ge solar cells. ...

7

Development and Characterization of a GaAs nipi Superlattice Solar Cell

Development and Characterization of a GaAs nipi Superlattice Solar Cell

... the solar cell while the p-type contact was made on the front ...these solar cells the v-groove etch and epitaxial regrowth were both completed at the NASA GRC with less than ten minutes between the ...

176

Open circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure

Open circuit voltage increase of GaSb/GaAs quantum ring solar cells under high hydrostatic pressure

... Hydrostatic pressure measurements were carried out at room temperature using a Unipress He-gas compressor system capable of generating pressures of up to 10 kbar in a pressure cell where the solar cells ...

11

Optical and Mechanical Investigation of InAs /GaAs Quantum Dots Solar Cells and InAs Nanowires for the Application of Photovoltaic Device

Optical and Mechanical Investigation of InAs /GaAs Quantum Dots Solar Cells and InAs Nanowires for the Application of Photovoltaic Device

... n-type GaAs buffer ...the solar cells was used to form barrier to ...Zn-doped GaAs with a doping density of ...doped GaAs layer is used to facilitate Ohmic contact formation. ...

113

Submonolayer InGaAs/GaAs quantum dot solar cells

Submonolayer InGaAs/GaAs quantum dot solar cells

... High-growth-temperature GaAs spacer layers were used to sup- press the formation of threading dislocations ...the solar cell samples was characterised by a Veeco Nanoscope V atomic force microscope ...

6

Dilute nitride and GaAs n i p i solar cells

Dilute nitride and GaAs n i p i solar cells

... efficiency solar cells are GaAs- based tandem solar cells (GaAs, GaInP and Ge) achiev- ing efficiencies greater than 32% (AM ...Multi-junction solar cells ...

5

Quantum Engineering of InAs/GaAs Quantum Dot Based Intermediate Band Solar Cells

Quantum Engineering of InAs/GaAs Quantum Dot Based Intermediate Band Solar Cells

... a GaAs control solar cell, a reference QD-IBSC and a quantum engineered ...these solar cells is presented elsewhere 23 and here we focus on the region beyond the GaAs band ...the ...

6

Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell

Theoretical analysis of GaAs/AlGaAs quantum dots in quantum wire array for intermediate band solar cell

... A GaAs quantum dot (QD) array embedded in a AlGaAs host material was fabricated using a strain-free approach, through combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy ...a ...

13

Upconversion in solar cells

Upconversion in solar cells

... Upconversion was suggested by Bloembergen [24] and was related to the development of infrared (IR) detectors: IR photons would be detected through sequential absorp- tion, as would be possible by the arrangement of ...

10

Absorption coefficients in AlGaInP lattice-matched to GaAs

Absorption coefficients in AlGaInP lattice-matched to GaAs

... [1] R.R. King, D. Bhusari, D. Larrabee, X.Q. Liu, E. Rehder, K. Edmondson, H. Cotal, R.K. Jones, J.H. Ermer, C.M. Fetzer, D.C. Law, N.H. Karam, Solar cell generations over 40% efficiency, Prog. Photovolt.: Res. ...

5

Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells

Type II GaSb/GaAs quantum rings with extended photoresponse for efficient solar cells

... type-II band alignment provides strong hole confinement (600 meV) but no electron confinement, which could improve carrier extraction, prevent weakening of the built-in electric field and produce a red-shift of the ...

7

Quantum engineering of InAs/GaAs quantum dot based intermediate band solar cells

Quantum engineering of InAs/GaAs quantum dot based intermediate band solar cells

... a solar cell can be substantially increased by opening new energy gaps within the semi- conductor band ...junction GaAs solar cell using an array of InAs quantum dots that leads directly to high ...

7

Design and analysis of nano-structured gratings for
conversion efficiency improvement in GaAs solar cells

Design and analysis of nano-structured gratings for conversion efficiency improvement in GaAs solar cells

... There are several types of losses in solar cell that always reduces its conversion efficiency. Among them, the reflection loss is one of the most important factor that decreases the conversion efficiency of ...

13

A Short Progress Report on High Efficiency Perovskite Solar Cells

A Short Progress Report on High Efficiency Perovskite Solar Cells

... of solar cell called dye-sensitized solar cell, which can cover the sun light energy into electricity energy with an effi- ciency about 7% ...conventional solar cells, these novel solar ...

8

Golden ratio applied in the orientation of solar cells in a golden spiral solar panel

Golden ratio applied in the orientation of solar cells in a golden spiral solar panel

... spiral solar panels; while the lows are typically in the early morning and late afternoon ...effective solar radiation conversion into optimized output solar ...

5

Fabrication of Nanostructured Objects by Thermal Vacuum Deposition of Ge Films onto (100)GaAs Substrates

Fabrication of Nanostructured Objects by Thermal Vacuum Deposition of Ge Films onto (100)GaAs Substrates

... In all the cases, a ratio of the double characteristic height to the characteristic lateral size is less than 1, i.e. the grains (at least, in the near-surface layer) are oblate in direction perpendicular to the surface, ...

9

Contribution to the study of electronic structure of crystalline semiconductors (Si, Ge, GaAs, Gap, ZnTe, ZnSe)

Contribution to the study of electronic structure of crystalline semiconductors (Si, Ge, GaAs, Gap, ZnTe, ZnSe)

... and Ge we find that we are dealing with two types of ...the Ge (the minimum of the conduction band and the maximum of the valence band are both at any point representing the center of the Brillouin’s zone) ...

8

Influences of PbS Quantum Dot Layers on Power Conversion Efficiency of Single Junction GaAs Solar Cells

Influences of PbS Quantum Dot Layers on Power Conversion Efficiency of Single Junction GaAs Solar Cells

... collected using Keithley 2602A. The quantum efficiency is used to evaluate the generated carrier efficiency of the solar cell, which is determined by the ratio of the number of generated carriers on the number of ...

6

Photovoltaic Performance of Pin Junction Nanocone Array Solar Cells with Enhanced Effective Optical Absorption

Photovoltaic Performance of Pin Junction Nanocone Array Solar Cells with Enhanced Effective Optical Absorption

... and the phenomenon becomes more obvious with the increase of slope angle. The anti-reflection ability of the NW arrays can be attributed to the low filling ratio, which reduces the effective refractive index and offers a ...

9

Show all 10000 documents...

Related subjects