GaN-based laser diodes
Fabrication of InGaN/GaN MQWs Vertical Blue Light-Emitting Diodes Using Laser Lift-Off Technique
... years, GaN-based light-emitting diodes (LEDs) are the most promising candidate for development of more efficient and highly reliable light source for replacement of low efficient (~ 5-10%) ...
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InGaN-BASED LASER DIODES Shuji NAKAMURA
... When electrons and holes are injected into this InGaN well-layer with a small In composi- tion fluctuation, some of the injected carriers overflow from the localized energy states with increasing current and reach ...
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Ultraviolet/blue light emitting diodes based on single horizontal ZnO microrod/GaN heterojunction
... Figure 2 shows the PL spectra of the single ZnO microrod, p-GaN films, and ZnO/GaN heterostructure measured at room temperature. The PL spectrum of the ZnO microrod consists of an intense near-band-edge ...
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Capability of GaN based micro-light emitting diodes operated at an injection level of kA/cm2
... 1ps temporal resolution, test wavelength range from 421 to 525.5 nm. The pump laser penetrated into μLEDs array to produce fluorescence which is focused into streak camera. Then, these photons were converted to ...
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Reversed Effects of Quantum Well Numbers and Temperature on Optical Power and Wavelength of a Designed Ultraviolet Semiconductor Laser Based on GaN/InGaN
... (laser diodes) leads to some undesirable results such as optical power reduction and rise in threshold ...lasers based on GaN and InGaN with mole fraction of ...
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Characteristics of GaN-based light emitting diodes with different thicknesses of buffer layer grown by HVPE and MOCVD
... the GaN buffer layer, a field emission gun scanning electron microscope (FEI Sirion 200) was used to acquire room temperature CL hyperspectral images of the HVPE-GaN surface and the LED ...nm laser ...
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Novel thin GaN LED structure adopted micro abraded surface to compare with conventional vertical LEDs in ultraviolet light
... light-emitting diodes (NTG-LEDs) were fabricated using wafer bonding, laser lift-off, dry etching, textured surface, and interconnection ...light-emitting diodes (V-LEDs) and the current spreading ...
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An Analog Current Controller Design for Laser Diodes
... the laser diode housing. The protection circuit help defend the laser diode from electrocution and the filter is to guard against any high frequency pickup from the power transport lines (twisted pairs) ...
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Origin of power fluctuations in GaN resonant cavity light emitting diodes
... A novel infrared measurement technique has been used to study failure in GaN LEDs. Bottom-emitting InGaN/GaN multiple-quantum-well RCLEDs have been manufactured on sapphire substrates. Instabilities were ...
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Enhancement in Light Extraction Efficiency of GaN Based Light Emitting Diodes Using Double Dielectric Surface Passivation
... The III-nitrides are suitable materials for photoelectronic applications covering most of the electromagnetic spec- trum due to their wide range of direct bandgap energy. Light emitting diodes (LEDs) are promising ...
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Issues relating to the application of monolithic tuneable laser diodes to multi species gas detection
... for laser transmission with reasonably low ...feedback laser diodes, which limits detection to a single ...tuneable laser diodes for incorporation in optical networks as back-up ...
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Infrared Fiber Lasers
... AdValue Photonics Features of Fiber Lasers Seed Fiber Laser Fiber pigtailed laser diodes Fiber pigtailed laser diodes Fiber pigtailed laser diodes Fiber pigtailed laser diodes S[r] ...
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Temperature Effect towards DFB Laser Wavelength on Microwave Generation Based on Two Optical Wave Mixing
... operation, laser is designed to use a distributed Bragg reflector gratings structure, which is placed on the active waveguide (WG) layer ...layer laser and acts as a mirror of Fabry Perot laser ...
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Growth and Fabrication of GaN/InGaN Violet Light Emitting Diode on Patterned Sapphire Substrate
... We investigated the performance of LEDs grown by metal-organic chemical vapour deposition (MOCVD) on single side polished (SSP) sapphire substrate and patterned sapphire substrate (PSS). The morphology of the PSS was ...
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Recovery Performance of Ge Doped Vertical GaN Schottky Barrier Diodes
... n-type GaN is a key link for fabricating nitride ...in GaN, because both of them share a similar characteristic of shallow level im- purity (the activation energy is reported to be 20 and 17 meV for Ge and ...
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Optically pumped terahertz laser based on intersubband transitions in a GaN/AlGaN double quantum well
... a laser based on intersubband transitions in quantum wells ...lasers based on GaAs/AlGaAs and AlInAs/GaInAs and most recently on InAs/AlSb material ...cascade laser (QCL) from its first ...
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SPATIAL DIVERSITY TECHNIQUES IN MIMO WITH FREE SPACE OPTICAL COMMUNICATION
... several laser diode are used (as laser diodes convert electrical information into optical data stream) for transmitting the data and at the receiver several photo diodes are used to collect ...
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Use of confocal and multiphoton microscopy for the evaluation of micro-optical components and emitters
... illumination laser was then blocked and the required element(s) of the device switched on and XYZ images were then recorded from within the sample through to a height typically 50-100 microns above the ...
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InAs/GaAs Quantum Dot Dual Mode Distributed Feedback Laser Towards Large Tuning Range Continuous Wave Terahertz Application
... whole laser structure leading to many complex and uncertain factors ...(LC-DFB) laser structure which was realized by deeply etching the grat- ing vertically into the ridge waveguide, but low slope ef- ...
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Theory of Optimal Mixing in Directly Modulated Laser Diodes
... of Laser Diodes (LD); in this case, LD is used as an E/O converter and microwave mixer, ...Emitting Laser (VCSEL) ...in laser diodes for the rst time, to the best of our knowledge, with ...
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