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Gate dielectrics

Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing

Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing

... ultrathin gate oxides including: ~ i ! monolayer incorporation of N atoms at the Si–SiO 2 interfaces to reduce tunneling currents and improve device reliability; and ~ ii ! the incorporation of silicon nitride ...

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The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing

The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing

... into gate stack processing, with minimum modification of current process ...layer gate dielectrics made with oxides and nitrides, both deposited by RPECVD, and in the ...stack gate ...

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Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity

Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity

... high-k gate dielectrics that have been considered for advanced complementary metal–oxide–semiconductor ...alternative gate dielectrics requires a transition from a thermally deposited native ...

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Interaction of Metal Gatew with High-K Gate Dielectrics in Advanced CMOS Devices

Interaction of Metal Gatew with High-K Gate Dielectrics in Advanced CMOS Devices

... Usually, an intentional ultra-thin SiON layer as LOI-A is placed between the high-k layer and Si to achieve a good quality interface with Si having a low defect density. This layer plays an important role in determining ...

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Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices

Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices

... and gate injection has been ...ultrathin gate dielectrics using the exact solution to tunneling ...in gate injection, rather than changes in both gate and substrate injection and ...

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Breakdown and Reliability of CMOS Devices with Stacked Oxide/Nitride and Oxynitride Gate Dielectrics Prepared by RPECVD

Breakdown and Reliability of CMOS Devices with Stacked Oxide/Nitride and Oxynitride Gate Dielectrics Prepared by RPECVD

... post-breakdown gate leakage of various gate ...oxynitride dielectrics are lowered by 2-3 orders of magnitude under substrate injection, and 1-2 orders of magnitude under gate injection ...

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Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics

Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics

... Abstract-As gate dielectrics are scaled to a few atomic layers and the channel doping is increased to mitigate short channel effects, high vertical electric fields cause considerable mobility degradation ...

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Electrical Instability in Pentacene Transistors with Mylar and PMMA/Mylar Gate Dielectrics Transferred by Lamination Process

Electrical Instability in Pentacene Transistors with Mylar and PMMA/Mylar Gate Dielectrics Transferred by Lamination Process

... with gate dielectrics deposited by a lamination ...(Al) gate is deposited, followed by evaporation of organic semiconductor and gold (Au) source/drain contacts in bottom gate top contact ...

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Characterization of High-k gate dielectrics based on HfO2 and TiO2 for CMOS Application

Characterization of High-k gate dielectrics based on HfO2 and TiO2 for CMOS Application

... high-k dielectrics such as hafnium oxide, titanium oxide, and ternary alloys with nitrided films of each of the above, as well as silicon dioxide on silicon and germanium ...better gate dielectrics ...

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Fabrication and Evaluation of Devices Containing High K Gate Dielectrics and Metal Gate Electrodes for the 70 and 50NM Technology Nodes of ITRS

Fabrication and Evaluation of Devices Containing High K Gate Dielectrics and Metal Gate Electrodes for the 70 and 50NM Technology Nodes of ITRS

... metal gate with high-k gate dielectrics ...the gate work function on the bulk metal microstructure, metal/dielectric interface chemistry, and even gate–dielectric ...metal gate ...

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Low series resistance structures for gate dielectrics with a high leakage current

Low series resistance structures for gate dielectrics with a high leakage current

... Different innovative RF C-V test structures are presented for material re- search. The low series resistance RF C-V structures have been fabricated. Measurements performed on the low resistivity substrate indicate that ...

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Structural and electrical characteristics of high κ Er2O3 and Er2TiO5 gate dielectrics for a IGZO thin film transistors

Structural and electrical characteristics of high κ Er2O3 and Er2TiO5 gate dielectrics for a IGZO thin film transistors

... ically depicted in Figure 5b,c, respectively. Briefly speak- ing, during dc stress, hydroxyl ions (OH – ) are released from the erbium hydroxide (Er-OH) by breaking the Er-OH bonds. The electrons in the oxide have gained ...

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Reactions of High-k Gate Dielectrics: Studies in Hafnium, Zirconium, Yttrium, and Lanthanum-based Dielectrics and in-situ Infrared Results for Hafnium Dioxide Atomic Layer Deposition

Reactions of High-k Gate Dielectrics: Studies in Hafnium, Zirconium, Yttrium, and Lanthanum-based Dielectrics and in-situ Infrared Results for Hafnium Dioxide Atomic Layer Deposition

... X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), and transmission electron microscopy (TEM) were used to identify the bulk chemical structure of the films. 9 TEM, XPS, angle ...

238

Structural and electrical characterization of SiO2 gate dielectrics deposited from solutions at moderate temperatures in air

Structural and electrical characterization of SiO2 gate dielectrics deposited from solutions at moderate temperatures in air

... were deposited onto commercially available ITO-coated glass, fused silica, KBr and c-Si substrates. The film properties were investigated using a number of characterization techniques including UV-Vis absorption ...

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Characterization of Hf Si Oxynitride Pseudo-ternary Gate Dielectrics for the Application of Ge MOSFETs.

Characterization of Hf Si Oxynitride Pseudo-ternary Gate Dielectrics for the Application of Ge MOSFETs.

... The major contribution of this dissertation is to provide a possible engineering solution pathway for the elimination of slow trap density (negative and positive trap charges) and achievement of low interface trap ...

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Accurate modeling of gate capacitance in deep submicron MOSFETs with high K gate dielectrics

Accurate modeling of gate capacitance in deep submicron MOSFETs with high K gate dielectrics

... DT gate leakage ...the gate capacitance. However, modeling of gate capacitance in deep sub-100 nm de- vices is somewhat ...the gate-dielectric are ...calculated gate capa- citance ...

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The interfaces of lanthanum oxide based subnanometer EOT gate dielectrics

The interfaces of lanthanum oxide based subnanometer EOT gate dielectrics

... namely, gate-first, gate-last, source/drain first, and combined methods, were proposed ...The gate-first process is similar to the conventional ...

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GaN-dielectric interface formation for gate dielectrics and passivation layers using remote plasma processing

GaN-dielectric interface formation for gate dielectrics and passivation layers using remote plasma processing

... oxide of GaN can be used to control semiconductor-deposited dielectrics interface. The purpose of present work is to investigate that a controlled superficially thin native oxide of GaN can improve the quality of ...

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Heavy-ion-induced breakdown in ultra-thin gate oxides and high- k dielectrics

Heavy-ion-induced breakdown in ultra-thin gate oxides and high- k dielectrics

... heavy-ion-induced gate rupture in SiO films of thicknesses of 18, 12, and ...in gate dielectrics, particularly soft breakdown versus gate ...for gate breakdown failures in space and the ...

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Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness

Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness

... bulk dielectrics, 2–5 fol- lowed by 共 ii 兲 the substitution of alternative high-k oxides or silicates, such as Zr 共 Hf 兲 O 2 –SiO 2 共 ...oxide gate dielectrics of the same ...

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