Gate dielectrics
Optimization of nitrided gate dielectrics by plasma-assisted and rapid thermal processing
9
The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO2 interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing
9
Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity
9
Interaction of Metal Gatew with High-K Gate Dielectrics in Advanced CMOS Devices
258
Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices
11
Breakdown and Reliability of CMOS Devices with Stacked Oxide/Nitride and Oxynitride Gate Dielectrics Prepared by RPECVD
145
Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics
34
Electrical Instability in Pentacene Transistors with Mylar and PMMA/Mylar Gate Dielectrics Transferred by Lamination Process
9
Characterization of High-k gate dielectrics based on HfO2 and TiO2 for CMOS Application
106
Fabrication and Evaluation of Devices Containing High K Gate Dielectrics and Metal Gate Electrodes for the 70 and 50NM Technology Nodes of ITRS
155
Low series resistance structures for gate dielectrics with a high leakage current
107
Structural and electrical characteristics of high κ Er2O3 and Er2TiO5 gate dielectrics for a IGZO thin film transistors
5
Reactions of High-k Gate Dielectrics: Studies in Hafnium, Zirconium, Yttrium, and Lanthanum-based Dielectrics and in-situ Infrared Results for Hafnium Dioxide Atomic Layer Deposition
238
Structural and electrical characterization of SiO2 gate dielectrics deposited from solutions at moderate temperatures in air
24
Characterization of Hf Si Oxynitride Pseudo-ternary Gate Dielectrics for the Application of Ge MOSFETs.
147
Accurate modeling of gate capacitance in deep submicron MOSFETs with high K gate dielectrics
6
The interfaces of lanthanum oxide based subnanometer EOT gate dielectrics
5
GaN-dielectric interface formation for gate dielectrics and passivation layers using remote plasma processing
174
Heavy-ion-induced breakdown in ultra-thin gate oxides and high- k dielectrics
9
Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness
6