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High K dielectric materials

Performance Analysis of Double Gate n-FinFET Using High-k Dielectric Materials

Performance Analysis of Double Gate n-FinFET Using High-k Dielectric Materials

... in high power dissipation which can degrades device performance and ...using high-k dielectric materials which have attracted the semiconductor industry in the past decade due to their ...

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Grain size dependence of dielectric relaxation in cerium oxide as high k layer

Grain size dependence of dielectric relaxation in cerium oxide as high k layer

... measurements are carried out from strong inversion (−1 V) toward strong accumulation (2 V). Noticeable frequency dispersion on C-V curves is observed. Frequency disper- sion in C-V or capacitance-frequency measurements ...

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Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs)

Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs)

... smaller SS than conventional TFETs by replacing source- side gate insulator with high-k materials [18]. First, the theoretical background of TFETs and device concepts of HG TFETs will be covered. In ...

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Functional oxide as an extreme high k dielectric towards 4H SiC MOSFET incorporation

Functional oxide as an extreme high k dielectric towards 4H SiC MOSFET incorporation

... classical high-k. The dielectric constant of these materials is naturally very high and may be altered by a phase transition in the material, achieved by the application of an external ...

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Future MOSFET Devices using high k (TiO2) dielectric

Future MOSFET Devices using high k (TiO2) dielectric

... Sheet resistance is a measure of resistance of thin films that are nominally uniform in thickness. It is commonly used to characterize materials made by semiconductor doping, metal deposition etc. Examples of ...

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Computationally efficient quantum mechanical technique to calculate direct tunnelling gate leakage current in metal oxide semiconductor structures

Computationally efficient quantum mechanical technique to calculate direct tunnelling gate leakage current in metal oxide semiconductor structures

... We propose a computationally efficient, accurate and numerically stable quantum-mechanical technique to calculate the direct tunneling 共 DT 兲 gate current in metal-oxide-semiconductor 共 MOS 兲 structures. Knowledge of the ...

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Electrodeless Measurement Technique of Complex Dielectric Permittivity of High-K Dielectric Films in the Millimeter Wavelength Range

Electrodeless Measurement Technique of Complex Dielectric Permittivity of High-K Dielectric Films in the Millimeter Wavelength Range

... the dielectric permittivity ( ε ) and dielectric loss tangent (tan δ ) of materials at microwave frequencies the metal cavity resonators are widely used [1– ...

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Review Literature for Mosfet Devices Using High K

Review Literature for Mosfet Devices Using High K

... Oxide materials with large dielectric constants (so-called high-k dielectrics) have attracted much attention due to their potential use as gate dielectrics in MOSFETs ...

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Correlation of dielectric, electrical and magnetic properties near the magnetic phase transition temperature of cobalt zinc ferrite

Correlation of dielectric, electrical and magnetic properties near the magnetic phase transition temperature of cobalt zinc ferrite

... observed high dielectric constant in CZFO, complex impedance spectra (Nyquist-plots) at different temperatures are shown in Figure ...440 K) one semicircular arc has been observed, whereas at higher ...

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Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications

Lanthanide-based Oxides and Silicates for High-K Gate Dielectric Applications

... lanthanide-based high-κ dielectrics for high-end metal-oxide-semiconductor field effect transistor (MOSFET) ...This dielectric was chosen due to its optimal electrical properties and high ...

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High-k Gate Dielectric Selection for Germanium-based CMOS Devices

High-k Gate Dielectric Selection for Germanium-based CMOS Devices

... recent materials innovation, the semiconductor industry is exploring the alternatives of ...as high leakage current and low drain ...in high‐mobility substrates such as Ge, III‐V compound ...

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Accurate modeling of gate capacitance in deep submicron MOSFETs with high K gate dielectrics

Accurate modeling of gate capacitance in deep submicron MOSFETs with high K gate dielectrics

... dielectric materials. The calculated gate capacitance is higher for materials with lower conduction band offsets with ...gate- dielectric material can also be expressed in terms of the error in ...

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Densification of Thin Aluminum Oxide Films by Thermal Treatments

Densification of Thin Aluminum Oxide Films by Thermal Treatments

... example, dielectric constants exceeding 10 have been reported after crystallization at temperatures above 1000˚C ...higher dielectric constant of ∼25 forms silicate at the interface with Si and crys- ...

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Variation in Parameters on Electrical Characteristics of FinFET with High-k dielectric

Variation in Parameters on Electrical Characteristics of FinFET with High-k dielectric

... ABSTRACT: The scaling of bulk CMOS faces significant challenges in the future due to fundamental material and process technology limits. Primary obstacles to the scaling of bulk CMOS to sub-45nm gate lengths include ...

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Dielectric relaxation of high k oxides

Dielectric relaxation of high k oxides

... of high-k dielectrics was observed and classified into two parts: extrinsic cause and intrinsic ...of dielectric constant (dielectric relaxation), that is the intrinsic frequency dispersion, ...

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Medium energy ion scattering for the high depth resolution characterisation of high k dielectric layers of nanometer thickness

Medium energy ion scattering for the high depth resolution characterisation of high k dielectric layers of nanometer thickness

... a high energy resolution electrostatic energy analyser ...in materials, which, as mentioned above, are well ...of dielectric films of nanometer ...

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Fabrication and Device Characterization of Alternative Gate Stacks Using the Non Self-Aligned Gate Process

Fabrication and Device Characterization of Alternative Gate Stacks Using the Non Self-Aligned Gate Process

... higher dielectric constant (K) insulators can potentially reduce this leakage since they use physically thicker dielectrics while maintaining the required ...Accordingly, high K gate ...

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IMPLEMENTATION OF HIGH-K DIELECTRIC MATERIAL/METAL GATE IN DOUBLE GATE MOSFET

IMPLEMENTATION OF HIGH-K DIELECTRIC MATERIAL/METAL GATE IN DOUBLE GATE MOSFET

... for high-performance systems. [2] Thus high-k dielectic material are used as gate oxide material in order to reduce the tunneling current at the same time better performance of the ...

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The performance analysis of optically transparent materials used in tunable devices

The performance analysis of optically transparent materials used in tunable devices

... low dielectric loss materials. Therefore, a glass material with high loss property at low and high frequencies could not be a good candidate for a split cylinder resonant cavity method ...

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The use of Dielectric Absorption as a Method for Characterizing Dielectric Materials in Capacitors

The use of Dielectric Absorption as a Method for Characterizing Dielectric Materials in Capacitors

... which the short time is significantly longer than compartments with small time constants and low internal resistances, the way in which the absorption signal affects itself is likely to change significantly from those ...

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