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high-power Schottky diodes

ELECTRICAL CHARACTERIZATION OF CHROMIUM/4H-SIC SCHOTTKY BARRIER DIODES

ELECTRICAL CHARACTERIZATION OF CHROMIUM/4H-SIC SCHOTTKY BARRIER DIODES

... as high breakdown field strength, a high value of saturated electron drift velocity, reasonable electron mobility and high thermal ...of high quality devices depend to a large extent on the ...

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The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and MOSFETs

The impact of temperature and switching rate on the dynamic characteristics of silicon carbide schottky barrier diodes and MOSFETs

... the high temperature expectations considerably as they are proven to act better in such conditions compared to their silicon counterparts ...The power supply provides the charge voltage and the inductor is ...

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Evaluation of SiC Schottky diodes using pressure contacts

Evaluation of SiC Schottky diodes using pressure contacts

... SiC power devices and modules is increasingly becoming of interest especially for high power applications where power cycling performance is ...for high power thyristor- based ...

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Recovery Performance of Ge Doped Vertical GaN Schottky Barrier Diodes

Recovery Performance of Ge Doped Vertical GaN Schottky Barrier Diodes

... of high frequency, high power, and high performance ...GaN-based Schottky barrier diode (SBD) is a vital component in the switching ...a high switching speed with low reverse ...

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High Voltage β Ga2O3 Schottky Diode with Argon Implanted Edge Termination

High Voltage β Ga2O3 Schottky Diode with Argon Implanted Edge Termination

... loss, high-voltage switching and high-power appli- cations, including high-breakdown voltage Schottky barrier diode (SBD) and metal-oxide-semiconductor field-effect transistor (MOSFET) ...

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Analytical modeling of switching energy of silicon carbide Schottky diodes as functions of dIDS/dt and temperature

Analytical modeling of switching energy of silicon carbide Schottky diodes as functions of dIDS/dt and temperature

... SiC diodes do not exhibit reverse recovery like PiN diodes, they are however prone to electromagnetic oscillations or ringing in the output ...at high switching rates [20] whereas at lower switching ...

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Pressure contact multi chip packaging of SiC Schottky diodes

Pressure contact multi chip packaging of SiC Schottky diodes

... based power modules in applications which require an enhanced robustness and ...based power modules, namely the solder and wirebonds ...a high reliability and ...

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SiC polytypes and doping nature effects on electrical properties of ZnO SiC Schottky diodes

SiC polytypes and doping nature effects on electrical properties of ZnO SiC Schottky diodes

... electronic power applications. Among its properties, there are its high electric field strength, high electron drift velocity, high thermal conductivity, radiation and harsh ambient endurance, ...

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POWER FACTOR IMPROVEMENT USING CURRENT SOURCE RECTIFIER WITH BATTERY CHARGING CAPABILITY IN REGENERATIVE MODE OF SRM

POWER FACTOR IMPROVEMENT USING CURRENT SOURCE RECTIFIER WITH BATTERY CHARGING CAPABILITY IN REGENERATIVE MODE OF SRM

... lower power levels and the phase-controlled rectifier with LC filter at higher power ...include power quality issues relating to the source end as ...loads, power system protection and ...

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American Journal of Nanomaterials

American Journal of Nanomaterials

... The RT fast and reversible vertical-heterostructure diode gas sensor composed of reduced graphene oxide and AlGaN/GaN was investigated and reported by Bag et al. [88]. In that study, a vertical heterostructure diode ...

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Junction investigation of graphene/silicon Schottky diodes

Junction investigation of graphene/silicon Schottky diodes

... Since the first demonstration of graphene nanosheets in 2004, it has been considered as a chemically stable and mechanically strong new material [1]. Tremendous work has been devoted to this material because it has ...

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Hydrogen doped thin film diamond: Properties and application for electronic devices

Hydrogen doped thin film diamond: Properties and application for electronic devices

... In order to investigate if oxidation o f the surface and the am ount o f w ater v ap o u r in the air w ere a ffectin g the properties o f this layer, I-V m easu rem en ts and heat tre a tm e n ts w ere conducted in an ...

227

Atomic Layer Deposition Grown Zinc-Oxide Based MIS-Type Schottky Barrier Diode

Atomic Layer Deposition Grown Zinc-Oxide Based MIS-Type Schottky Barrier Diode

... with high precision at the atomic scale and control sensitive film ...allows high-quality thin films to be produced at low temperatures because the precursors of the gas phase can be held on the surface ...

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Highly sensitive hydrogen sensor based on graphite InP or graphite GaN Schottky barrier with electrophoretically deposited Pd nanoparticles

Highly sensitive hydrogen sensor based on graphite InP or graphite GaN Schottky barrier with electrophoretically deposited Pd nanoparticles

... linear parts, the Schottky barrier heights and ideality fac- tors (IF) were evaluated as described in Ref. [7]. The height value was 0.873 eV and the ideality factor was 1.08 for InP-Pd-C diode, giving evidence ...

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Relationships Between Prior Experiences, Current Teaching Contexts, and Novice Teachers' Use of Concrete Representation for Mathematics Instruction

Relationships Between Prior Experiences, Current Teaching Contexts, and Novice Teachers' Use of Concrete Representation for Mathematics Instruction

... with diodes with moderately non-ideal characteristics, the model produces unphysical fitting parameters while fitting highly non-ideal ...for diodes with ideality factor, n > ...the diodes being ...

161

Development of Optimal 4H-SiC Bipolar Power Diodes for High-Voltage High-Frequency Applications.

Development of Optimal 4H-SiC Bipolar Power Diodes for High-Voltage High-Frequency Applications.

... a high voltage device on-wafer, care must be taken to avoid dielectric breakdown of the atmosphere around the ...for high voltage devices include using either an insulating gas [49], vacuum [50], or a ...

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Impact of doping on the performance of p type Be doped Al0 29 Ga0 71As Schottky diodes

Impact of doping on the performance of p type Be doped Al0 29 Ga0 71As Schottky diodes

... lower Schottky barrier height, which causes the higher ideality factor ...AlGaAs Schottky diode at different temperatures with doping concentration of (a) N A =1×10 cm 16 −3 ...

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An Improved Active-Clamped DC-DC Converter with Modified PI Controller

An Improved Active-Clamped DC-DC Converter with Modified PI Controller

... grid power demand in case of the distributed generation using the renewable energy ...load power increases or decreases abruptly, the output voltage of the dc-dc converter fluctuates as the inverter load ...

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Effect of Schottky Barrier and Amorphous Structure of Sno2 Thin Film

Effect of Schottky Barrier and Amorphous Structure of Sno2 Thin Film

... v. Hogyoung Kim, Electron Transport Mechanisms in Ag Schottky ContactsFabricated on O-polar and Nonpolar m-plane Bulk ZnO, TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS, Vol. 16, No. 5, pp. 285-289, October ...

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Photostimulation for in vitro optogenetics with high power blue organic light emitting diodes

Photostimulation for in vitro optogenetics with high power blue organic light emitting diodes

... further-improved high-power millimeter-scale blue pin-OLEDs is evaluated in an all-optical system for stimulating and reading out neural activity in cultured ...

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