InAlAs/InGaAs/InAlAs/InP
Optimization of MBE Growth Conditions of In 0.52 Al 0.48 As Waveguide Layers for InGaAs/InAlAs/InP Quantum Cascade Lasers
... using InGaAs/InAlAs material system epitaxially grown on InP single crystal substrates, as this group offers wide possibilities of band-gap and wavefunction engineering with high values of band ...
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Experimental and Theoretical Study of Parasitic Effects in InAlAs/InGaAs/InP HEMT’s
... in InAlAs/InP heterostructure and InAlAs/InGaAs/InP High Electron Mobility Transistors (HEMTs) grown by metal organic chemical vapor deposition (MOCVD) is ...on InAlAs / ...
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Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness
... the InGaAs, and the InAlAs reference samples, as well as an InP(100) substrate measured at 10 K with a laser inten- sity of ...confined InGaAs/InAlAs QW system and allows the discrete ...
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1550 nm InGaAs/InAlAs single photon avalanche diode at room temperature
... our InGaAs/InAlAs SPAD are shown in ...semi-insulating InP substrate at the EPSRC National Centre for III-V Technologies at the University of ...nm InGaAs absorption region and a 200 nm ...
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Investigating Ballistic Transport In Nano-Dimensional InAlAs/InGaAs HEMT At Cryogenic Temperature
... device simulator. InAlAs-InGaAs-InP HEMTs is a high gain low noise device that offers minimum noise figures of 0.8 and 1.2 dB with gains of 8.9 and 7.2 dB at 60 and 94 GHz, respectively [20]. A ...
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Evaluation of Noise Coefficients for Separate Gate InAlAs/InGaAs Double Heterostructure DG-HEMT
... based InAlAs/InGaAs High Electron Mobility Transistors have exhibited excellent performance with a high cut-off frequency exceeding 500 GHz for 25 nm gate-length single-gate device ...made InP ...
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Theoretical Analysis of InGaAs/InAlAs Single Photon Avalanche Photodiodes
... and InGaAs/InP avalanche photodiodes (APDs) are the most significant photodetectors for short- wave infrared ...now InGaAs/InAlAs and InGaAs/InP APDs can realize the ...
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Modelling of advanced submicron Gate InGaAs/InAlAs pHEMTS and RTD devices for very high frequency applications
... based InAlAs/InGaAs pseudomorphic High Electron Mobility Transistors (pHEMTs) have shown outstanding performances, which makes them prominent in high frequency mm-wave and submillimeter-wave ...conventional ...
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The structural and optical properties of GaSb/InGaAs type II quantum dots grown on InP (100) substrate
... Quantum-size nanostructure materials have always been the research focus [1-5]. In recent years, staggered lineup type-II quantum-size nanostructures are of great research interest due to their possible application in ...
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Theoretical Studies on InGaAs/InAlAs SAGCM Avalanche Photodiodes
... novel InGaAs/InP single-photon avalanche photodiode (SPAD) with high SPDE (30%, 225 K), low noise, and low timing jitter ...of InGaAs/InP SPADs was built in ...for InGaAs/ InP ...
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Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes
... an InP-based, near infrared avalanche photodiode (APD) since its internal gain can improve the overall sensitivity of the ...undoped InGaAs ab- sorption layer, a doped, thin InP field-control layer, ...
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Optimization of InGaAs/InAlAs Avalanche Photodiodes
... [3]. InAlAs has been demonstrated to be a good electron multiplication ma- terial for InGaAs separate absorption and multiplication avalanche photodiodes (SAM APDs) because of its low electron impact ...
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Voltammetric Study and Determination of Phenylephrine Hydrochloride at INP-Nafion-Modified CPE Sensor Employing Differential Pulse Voltammetry
... the INP-Nafion-modified (curve c) and unmodified electrode (curve d) in buffer ...the INP-Nafion-modified CPE response with when the CPE was only coated with Nafion, the peak currents of PHE could increase ...
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Native and Radiation-Induced Defects in III-V Solar Cells and Photodiodes
... Pre-irradiation transmission line measurement (TLM), dark J-V, and C-V measurements were taken before irradiation with an Agilent B1500 semiconductor analyzer. The contact resis- tances were characterized by TLM method ...
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Controlling the optical properties of a laser pulse at λ = 1.55μm in InGaAs\InP double coupled quantum well nanostructure
... In Fig. 1 we consider a compact double coupled quantum well nanostructure which is fabricated using InGaAs/ InP nanostructures in material grown by an attractive growth technique i.e. organometallic vapor ...
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Self Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires
... of InGaAs/InP core – shell nanowires on Si – (111) substrates by metal-organic chemical vapor deposition ...the InGaAs core and InP shell materials has strong influence on the growth behavior ...
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High Wall Plug Efficiency 1060 nm High Power Semiconductor Laser
... Based on the principle above, we designed a high efficiency 1060 nm high power semiconductor laser epitax- ial structure shown in Figure 1, which the active region adopt InGaAs/GaAs double quantum well (QW) struc- ...
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Molecular beam epitaxy growth of peak wavelength controlled InGaAs/AlGaAs quantum wells for 4 3 μm mid wavelength infrared detection
... the InGaAs well finished for growing the whole AlGaAs ...the InGaAs well was grown, a thin 5-nm AlGaAs barrier was pre- deposited at the InGaAs growth temperature (500°C), and then the substrate ...
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Growth and Characterisation of Gold-seeded Indium Gallium Arsenide Nanowires for Optoelectronic Applications
... compositional homogeneity. An increase in V/III ratio allows more Ga to be incorporated into the nanowires and at the same time increases the probability for ZB phase to nucleate. At high V/III ratio pure ZB phase of ...
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A Quantum Simulation Study of III-V Esaki Diodes and 2D Tunneling Field-Effect Transistors
... To offset this drawback, different material systems can be used, with material opti- mization required for the channel material, the gate stack, and their corresponding geometries. This study considers the novel idea of ...
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