InGaAs-(Al)GaAs
Strained GaAs/InGaAs Core Shell Nanowires for Photovoltaic Applications
... single GaAs NW PV device [10] with η ≈ 40 % have been reported, showing the real potential of NW solar cells to compete directly with other thin-film solar cell ...core-shell GaAs/AlGaAs NWs, having a very ...
7
Temperature dependent Raman investigation of rolled up InGaAs/GaAs microtubes
... Self-positioning nanostructures with controlled compos- ition and size compatible with mass-production fabrica- tion techniques have been studied for almost two decades, giving rise to the so-called smart tubes in excit- ...
5
Submonolayer InGaAs/GaAs quantum dot solar cells
... High-growth-temperature GaAs spacer layers were used to sup- press the formation of threading dislocations [18,19]. The surface morphology of the solar cell samples was characterised by a Veeco Nanoscope V atomic ...
6
Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots
... region based on InAs/InGaAs/GaAs quantum dots emitting around 1.3 μ m were fabricated and studied. The diameter D of the microrings and microdisks was either 2 or 1.5 μ m, and the inner diameter d of the ...
7
Epitaxial growth of cubic MnSb on GaAs AND InGaAs(111)
... Both GaAs wafers (moderately n-doped, exactly oriented) and 400 nm thick In 0:5 Ga 0:5 As virtual substrates were ...inch) GaAs(111)A ...nm GaAs bu®er layer (InGaAs growth rate ...as ...
9
Energy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes
... cubic InGaAs quantum dots (QDs) surrounded by ...in InGaAs-GaAs interfaces, as well as in smaller ...bulk GaAs and come down into the QD separate ...
9
Exciton Dynamics in Stacked InGaAs/GaAs Quantum Rings Under Resonant Excitation
... nm GaAs spacer ...of GaAs is used to partially cap the seed pyramidal ...of InGaAs due to the initial alloying effect of the original InAs dot and the 2 nm thick GaAs capping layer ...
5
Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures
... the InGaAs dots or the wet- ting layer ...the InGaAs quantum dots, which reduces the photolu- minescence quantum efficiency and decreases their life- time, however, are not responsible for prolonged ...
7
Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets : a NEGF perspective
... Abstract This paper reviews our previous theoretical stud- ies and gives further insight into phonon scattering in 3D small nanotransistors using non-equilibrium Green function methodology. The focus is on very small ...
19
Dynamic nuclear polarization in InGaAs/GaAs and GaAs/AlGaAs quantum dots under nonresonant ultralow-power optical excitation
... In- GaAs/GaAs and ...the InGaAs/GaAs dots this nuclear spin polarization mechanism is particularly pro- nounced, resulting in Overhauser shifts up to ∼80 µeV achieved at optical excitation ...
10
Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots
... capped InGaAs QDs samples and the details of data analysis and measurements are given in the method ...on GaAs substrate is quite small, as a result only GID peaks like the (200), (220), (400) etc can be ...
11
Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light Sensitive Devices
... Development of the light-sensitive devices requires in- depth study of the photoelectric properties. Photovoltage (PV) or photoconductivity (PC) studies is an ideal tool for the determination of the photoresponse as ...
9
Post-growth spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors
... and InGaAs/GaAs QW samples in order to understand the important parameters before studying QD ...Unlike GaAs/AlGaAs QWs, the InGaAs/GaAs QDs are highly strained due to the lattice ...
343
Low Temperature Photoluminescence Measurement of Extremely Thin InGaAs/GaAs Multi Quantum Wells Grown by Molecular Beam Epitaxy
... The GaAs substrates were mounted on a molybdenum substrate and were heated to 200 0 C for two ...chamber GaAs buffer layer is grown at the oxide desorption ...of InGaAs layer the temperature is taken ...
9
InGaAs/GaAs Quantum Dot Solar Cells by Metal Organic Chemical Vapour Deposition
... The photoluminescence of the undoped and modulation doped QDSC samples with average doping density of 2e/dot and 4e/dot were measured at room temperature and plotted in Figure 4.2. In this Figure, only the samples with ...
172
Detecting Spatially Localized Exciton in Self Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency
... InAs/ GaAs QDs layer with a thin InGaAs strain-reduced ...InAs/ GaAs QDs SC which is of considerable practical and theoretical ...InAs/ InGaAs/GaAs QD heterostructures as shown by Ilahi ...
10
Effect of detuning on the phonon induced dephasing of optically driven InGaAs/GaAs quantum dots
... In recent experiments, we have identified longitudinal acoustic phonons as the principal source of intensity damp- ing of the ground-state (s-shell) transition of an InAs/GaAs self-assembled dot. 3 We have further ...
6
Design and characterization of high optical quality InGaAs/GaAs/AlGaAs-based polariton microcavities
... A typical microcavity structure consists of two distributed Bragg-reflector (DBR) mirrors forming a Fabry-P erot cavity containing several QWs. The DBR mirrors are formed by alternate layers of materials with contrasting ...
6
Rolled Up Nanotech: Illumination Controlled Hydrofluoric Acid Etching of AlAs Sacrificial Layers
... a GaAs substrate with an AlAs sacrificial layer) releases from the substrate as the sacrificial layer is preferentially removed by the HF at a previously defined starting edge and begins to roll up in order to ...
6
Cooperative Effects in the Photoluminescence of (In,Ga)As/GaAs Quantum Dot Chain Structures
... 2D InGaAs wetting layer (WL) or GaAs barrier and/or hopping between dots will favor a drift of carriers toward the dots having lower ground state ...
11