InGaAs-GaAs quantum well
Electron Microscopy Studies of Non Local Effects' Impact on Cathodoluminescence of Semiconductor Laser Structures
... Spatially and spectrally resolved cathodoluminescence (CL) studies performed in a scanning electron microscope (SEM) or a scanning transmission electron microscope (STEM) are widely applied to determine the luminescence ...
6
Polarized photoreflectance and photoluminescence spectroscopy of InGaAs/GaAs quantum rods grown with As2 and As4 sources
... source on the spectral and polarization features of the QR- and QW-related interband transitions was investigated and explained in terms of the carrier confinement effects caused by variation of composition contrast ...
7
Post-growth spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors
... The QD density is another parameter that materials scientists endeavour to optimise. The absorption efficiency depends on the QD density and the population of the available states in the QDs. Since the size and areal ...
343
Effect of detuning on the phonon induced dephasing of optically driven InGaAs/GaAs quantum dots
... the on-resonance experiments. 4 The pulse-area of Fig. 3(a) is scaled to match the model, which reproduces the data quite well. To aid the interpretation, the inset of Fig. 3(b) shows a calculation in the case of ...
6
Linewidth enhancement factor and modulation bandwidth of lattice matched 1 5 micron InGaAsN/GaAs quantum well lasers
... the large refractive index difference in this AlAs-GaAs based system makes it possible to fabricate monolithic Bragg reflectors with a small number of mirror pairs. For use as practical laser systems, a number of ...
9
Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot in well structure
... To further study the electronic structure and related car- rier dynamics between inter-sublevels, the RTA treatments were adopted to alter the transition energies of QDs by inter-diffusion of constituent atoms. It has ...
8
Phonon-Assisted Population Inversion of a Single InGaAs/GaAs Quantum Dot by Pulsed Laser Excitation
... as well as through off-resonant coupling of excitons to nano-cavities[16, ...single InGaAs/GaAs QD excited by a strong laser pulse tuned into the phonon sideband of the neutral exciton transition ...
6
Phonon-Assisted Population Inversion of a Single InGaAs/GaAs Quantum Dot by Pulsed Laser Excitation
... as well as through off-resonant coupling of excitons to nano-cavities[15, ...single InGaAs/GaAs QD under strong laser pumping at positive detuning with the driving laser to higher energy than the QD ...
8
Effects of rapid thermal annealing on device characteristics of InGaAs/GaAs quantum dot infrared photodetectors
... 共202 meV兲. With an increase of the bias, the intensity of the 4.5 m peak reduces rapidly and the 6.1 m peak becomes the dominant peak. To clarify the origin of the two peaks, the spectrum of optical absorption from ...
9
InGaAs/GaAs Quantum Dot Solar Cells by Metal Organic Chemical Vapour Deposition
... reliable quantum dot solar cell devices, several structural properties of the quantum dot need to be considered ...the quantum dots leads to a small absorption cross-section, which means growing of ...
172
Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
... the GaAs substrate and related inter- faces on device performance, as they might be highly filled by defect traps and non-radiative recombination levels as well as dopant centers [22, ...be well ...
10
Observation of strong anisotropic forbidden transitions in (001) InGaAs/GaAs single quantum well by reflectance difference spectroscopy and its behavior under uniaxial strain
... Figure 2 shows the real part of the RD and ΔR/R spectra of the three samples obtained at 80 K. In the ΔR/R spec- tra, we can observe the transitions of 1e1hh (the first conduction to the first valence subband of heavy ...
10
Quantum Wells to Improve the Performance of III/V Multi-junction Solar Cells.
... The well/barrier thicknesses are adjusted to strain- balance the structure as will be discussed in detail in Section ...periodic quantum wells with minimal stress ...of GaAs to lower energy values ...
170
InGaAs Quantum Well Grown on High Index Surfaces for Superluminescent Diode Applications
... as well as explores the possibility of high-index surfaces for SLD ...been well known that different substrate orientations have different growth reaction kinetics as well as various microscopic ...
6
Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors
... of GaAs (1.42 eV) are ascribed to interband transi- tions in the wide GaAs/AlAs QW, which are superimposed by Franz-Keldysh oscillations from the GaAs cap ...binary quantum well ...
7
Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures
... the InGaAs, while GaAs is transparent in the spectral range ...the InGaAs potential well in various ways, such as thermal emission, Poole-Frenkel emission [22, 23], or tunneling ...in ...
7
Submonolayer InGaAs/GaAs quantum dot solar cells
... and GaAs reference cell. Compared to the GaAs reference cell, the additional spectral response at 960 nm is observed for both SML QDSC and ...the GaAs bandgap ( 10%) is comparable to the sub-bandgap ...
6
Energy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes
... Moreover, e-h energies as well as the valence and conduction bands are drawn in Fig. 7 as a function of QD size. The interesting result of this article is that QD size makes a nonlinear effect on recombination ...
9
Interplay Effect of Temperature and Excitation Intensity on the Photoluminescence Characteristics of InGaAs/GaAs Surface Quantum Dots
... The PL spectra were first measured with a relatively low excitation intensity of 20 W/cm 2 at 10 K. As shown in Fig. 2a–c, the spectra show two obvious bands of emission for each sample. The long wavelength emission is ...
9
Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light Sensitive Devices
... the GaAs sub- strate and especially EL2-like defects in n + -GaAs/GaAs strained region [46, ...of InGaAs layers and nanostructures appears as valleys on the respective spectral curves in ...
9