InGaAs-GaAs quantum well structures
Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures
... the InGaAs, while GaAs is transparent in the spectral range ...the InGaAs potential well in various ways, such as thermal emission, Poole-Frenkel emission [22, 23], or tunneling ...in ...
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Post-growth spectral tuning of InGaAs/GaAs quantum dot infrared photodetectors
... structure, where the middle low-index layer has been doubled in thickness and is now a Fabry-Pérot cavity. The normal-incidence transmittance through these fifteen layers is given by the black curve, and is similar to ...
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Submonolayer InGaAs/GaAs quantum dot solar cells
... of quantum structures have been proposed to obtain the optimal energy bandgap and current matching for multijunction solar cells ...as quantum wells (QWs) and quantum dots (QDs), can introduce ...
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Energy Levels of InGaAs/GaAs Quantum Dot Lasers with Different Sizes
... Color of laser received from a QD laser is determined by the band gap width. In bulk semiconductors band gap is fixed. However, this situation changes in QDs, i.e., electrons will be sensitive to the nano- scale ...
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Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots
... Microlasers were optically pumped with the second harmonic of CW-operating YAG:Nd laser (λ = 532 nm, 10 to 200 mW). An excitation power can be varied down to sub-microwatt level using absorptive neutral density optical ...
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Polarized photoreflectance and photoluminescence spectroscopy of InGaAs/GaAs quantum rods grown with As2 and As4 sources
... the InGaAs content — all need to be considered ...QD structures [4] revealed that a large opti- cal anisotropy could be ascribed to the hole wavefunction orientation along [ 110] axis, which suppresses the ...
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InGaAs/GaAs Quantum Dot Solar Cells by Metal Organic Chemical Vapour Deposition
... plasmonic structures can offer at least three ways to reduce the physical thickness of the active layer that is required to absorb as much incident light as possible: light scattering from metal nanoparticles, ...
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Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light Sensitive Devices
... QD structures in the case of electrically active si-GaAs ...the GaAs substrate and bottom MBE n + -GaAs layer on one side and the rest of MBE-grown structure on the other ...InAs/ ...
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Effects of rapid thermal annealing on device characteristics of InGaAs/GaAs quantum dot infrared photodetectors
... self-assembled quantum dots 共QDs兲, their application to high performance optoelectronic devices, such as QD laser diodes and QD infrared photodetectors, have been successfully demon- ...the quantum-confined ...
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Temperature-dependent modulated reflectance of InAs/InGaAs/GaAs quantum dots-in-a-well infrared photodetectors
... The predominance of the PA effect in the modulated reflectance spectrum of InAs QDs can be explained by con- sidering light traveling inside the as-grown sample. The back-reflected light passes twice (forth and back) ...
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Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot in well structure
... thin InGaAs quantum well (QW) layer. An InGaAs capping layer on InAs/GaAs QDs can reduce emission energy of QDs by reduction of the residual compressive strain, increment of QD size, ...
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MBE grown GaAsBi/GaAs multiple quantum well structures : structural and optical characterization
... of quantum con fi nement have occurred in the diodes with more than 40 ...to InGaAs/GaAs MQWs. This suggests that replacing InGaAs with GaAsBi in multi-junction photovoltaics could produce a ...
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Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
... as well as under- standing of the energy profile for both structures composed by the InGaAs or GaAs MBs, In(Ga)As QDs, undoped cap layer, and Au/AuGeNi contacts, the calcu- lations were ...
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Low Temperature Photoluminescence Measurement of Extremely Thin InGaAs/GaAs Multi Quantum Wells Grown by Molecular Beam Epitaxy
... confined structures such as quantum dots during epitaxial ...arsenide. InGaAs band gap also makes it the detector material of choice in optical fiber communication at 1300 and 1550 ...
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Linewidth enhancement factor and modulation bandwidth of lattice matched 1 5 micron InGaAsN/GaAs quantum well lasers
... and InGaAs/InP single- quantum-well structures have been calculated using microscopic theory including many-body effects and a 10x10 effective-mass ...InGaNAs/GaAs quantum wells ...
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Electron Microscopy Studies of Non Local Effects' Impact on Cathodoluminescence of Semiconductor Laser Structures
... Spatially and spectrally resolved cathodoluminescence (CL) studies performed in a scanning electron microscope (SEM) or a scanning transmission electron microscope (STEM) are widely applied to determine the luminescence ...
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Dynamic nuclear polarization in InGaAs/GaAs and GaAs/AlGaAs quantum dots under nonresonant ultralow-power optical excitation
... in InGaAs/GaAs and GaAs/AlGaAs dots. In InGaAs dots low-power optical pumping is found to lead to large Overhauser shifts up to ∼ 80 ...In GaAs dots low-power DNP is systemat- ically ...
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Effect of detuning on the phonon induced dephasing of optically driven InGaAs/GaAs quantum dots
... driven quantum dot has been the subject of a strong body of theoretical ...the quantum dot as an optically driven two-level system coupled to a bath of bosons, in this case ...
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Long nuclear spin polarization decay times controlled by optical pumping in individual quantum dots
... We present results for QDs grown in the intrinsic region of an n-type Schottky GaAs /AlGaAs diode. Detailed de- scription of a very similar sample architecture can be found elsewhere. 25 Low temperature 共T = 15 K兲 ...
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Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots
... he dimensions of the major and minor axes at the height of 1 nm in GID data comes out to be 48 nm and 26.7 nm giving eccentricity of 0.83 and only at the height of 1.9 nm we get the values of major and minor axes as 37 ...
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